JP2002543293A5 - - Google Patents

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Publication number
JP2002543293A5
JP2002543293A5 JP2000615426A JP2000615426A JP2002543293A5 JP 2002543293 A5 JP2002543293 A5 JP 2002543293A5 JP 2000615426 A JP2000615426 A JP 2000615426A JP 2000615426 A JP2000615426 A JP 2000615426A JP 2002543293 A5 JP2002543293 A5 JP 2002543293A5
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JP
Japan
Prior art keywords
deposition surface
deposition
plasma
axis
beam axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000615426A
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English (en)
Japanese (ja)
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JP2002543293A (ja
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Publication date
Priority claimed from CH00794/99A external-priority patent/CH694699A5/de
Application filed filed Critical
Publication of JP2002543293A publication Critical patent/JP2002543293A/ja
Publication of JP2002543293A5 publication Critical patent/JP2002543293A5/ja
Pending legal-status Critical Current

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JP2000615426A 1999-04-29 2000-04-11 材料のプラズマ利用反応性堆積方法の使用 Pending JP2002543293A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH00794/99A CH694699A5 (de) 1999-04-29 1999-04-29 Verfahren zur Herstellung von Silizium.
CH794/99 1999-04-29
PCT/CH2000/000208 WO2000066806A1 (de) 1999-04-29 2000-04-11 Verwendung eines verfahrens zur plasmaunterstützten reaktiven abscheidung von material

Publications (2)

Publication Number Publication Date
JP2002543293A JP2002543293A (ja) 2002-12-17
JP2002543293A5 true JP2002543293A5 (https=) 2007-05-31

Family

ID=4195351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000615426A Pending JP2002543293A (ja) 1999-04-29 2000-04-11 材料のプラズマ利用反応性堆積方法の使用

Country Status (8)

Country Link
US (1) US6685994B1 (https=)
EP (1) EP1187945B1 (https=)
JP (1) JP2002543293A (https=)
CH (1) CH694699A5 (https=)
DE (1) DE50009169D1 (https=)
HK (1) HK1044571B (https=)
TW (1) TW507020B (https=)
WO (1) WO2000066806A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10149588B4 (de) * 2001-10-08 2017-09-07 Oerlikon Trading Ag, Trübbach Verfahren zur Diamantbeschichtung von Substraten
DE102004061632B4 (de) * 2004-12-17 2009-06-18 Auer Lighting Gmbh Innenbeschichtung von Entladungsgefäßen, Entladungsgefäße aus Quarzglas und deren Verwendung
DE102006003847B4 (de) * 2006-01-26 2011-08-18 Siemens AG, 80333 Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat
KR101046520B1 (ko) 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어
JP2011021256A (ja) * 2009-07-16 2011-02-03 Kochi Univ Of Technology ナノ結晶シリコン薄膜の成膜方法及びナノ結晶シリコン薄膜、並びに該薄膜を成膜する成膜装置
US10011920B2 (en) * 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188670A (en) * 1981-05-13 1982-11-19 Hitachi Ltd Treatment of electrically conductive member
CH664768A5 (de) * 1985-06-20 1988-03-31 Balzers Hochvakuum Verfahren zur beschichtung von substraten in einer vakuumkammer.
DE4029270C1 (https=) * 1990-09-14 1992-04-09 Balzers Ag, Balzers, Li
US5453168A (en) * 1993-08-25 1995-09-26 Tulip Memory Systems, Inc. Method for forming protective overcoatings for metallic-film magnetic-recording mediums
US5433786A (en) * 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
JP3166919B2 (ja) * 1993-10-29 2001-05-14 ウンアクシス バルツェルス アクチェンゲゼルシャフト 被覆体とこの被覆体を製造する方法およびその使用
US5888593A (en) * 1994-03-03 1999-03-30 Monsanto Company Ion beam process for deposition of highly wear-resistant optical coatings
DE59603312D1 (de) * 1995-01-25 1999-11-18 Balzers Ag Liechtenstein Verfahren zur reaktiven Schichtabscheidung
US5858477A (en) * 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
JP2965293B1 (ja) * 1998-11-10 1999-10-18 川崎重工業株式会社 電子ビーム励起プラズマ発生装置

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