JP2003504515A5 - - Google Patents

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Publication number
JP2003504515A5
JP2003504515A5 JP2001509574A JP2001509574A JP2003504515A5 JP 2003504515 A5 JP2003504515 A5 JP 2003504515A5 JP 2001509574 A JP2001509574 A JP 2001509574A JP 2001509574 A JP2001509574 A JP 2001509574A JP 2003504515 A5 JP2003504515 A5 JP 2003504515A5
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JP
Japan
Prior art keywords
plasma
jet
deposition
discharge
deposition surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001509574A
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English (en)
Japanese (ja)
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JP2003504515A (ja
JP4806146B2 (ja
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Priority claimed from PCT/CH2000/000364 external-priority patent/WO2001004379A1/de
Publication of JP2003504515A publication Critical patent/JP2003504515A/ja
Publication of JP2003504515A5 publication Critical patent/JP2003504515A5/ja
Application granted granted Critical
Publication of JP4806146B2 publication Critical patent/JP4806146B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001509574A 1999-07-13 2000-07-04 真空処理ないしは粉末製造のための装置および方法 Expired - Lifetime JP4806146B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH1292/99 1999-07-13
CH129299 1999-07-13
PCT/CH2000/000364 WO2001004379A1 (de) 1999-07-13 2000-07-04 Anlage und verfahren zur vakuumbehandlung bzw. zur pulverherstellung

Publications (3)

Publication Number Publication Date
JP2003504515A JP2003504515A (ja) 2003-02-04
JP2003504515A5 true JP2003504515A5 (https=) 2007-08-30
JP4806146B2 JP4806146B2 (ja) 2011-11-02

Family

ID=4207024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001509574A Expired - Lifetime JP4806146B2 (ja) 1999-07-13 2000-07-04 真空処理ないしは粉末製造のための装置および方法

Country Status (5)

Country Link
US (2) US6703081B2 (https=)
EP (1) EP1194611B1 (https=)
JP (1) JP4806146B2 (https=)
DE (1) DE50008516D1 (https=)
WO (1) WO2001004379A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4806146B2 (ja) * 1999-07-13 2011-11-02 エリコン・トレーディング・アクチェンゲゼルシャフト，トリュープバッハ 真空処理ないしは粉末製造のための装置および方法
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
JP2008508166A (ja) 2004-06-18 2008-03-21 リージェンツ・オブ・ザ・ユニヴァーシティー・オブ・ミネソタ 高周波プラズマを用いてナノ粒子を生成するための方法および装置
US20050281958A1 (en) * 2004-06-22 2005-12-22 Walton Scott G Electron beam enhanced nitriding system (EBENS)
US20080003377A1 (en) * 2006-06-30 2008-01-03 The Board Of Regents Of The Nevada System Of Higher Ed. On Behalf Of The Unlv Transparent vacuum system
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
US20080191193A1 (en) * 2007-01-22 2008-08-14 Xuegeng Li In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
US20080220175A1 (en) * 2007-01-22 2008-09-11 Lorenzo Mangolini Nanoparticles wtih grafted organic molecules
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
KR101046520B1 (ko) 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
DE102012024340A1 (de) * 2012-12-13 2014-06-18 Oerlikon Trading Ag, Trübbach Plasmaquelle
US10151025B2 (en) * 2014-07-31 2018-12-11 Seagate Technology Llc Helmholtz coil assisted PECVD carbon source
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH551497A (de) * 1971-10-06 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur zerstaeubung von stoffen mittels einer elektrischen niederspannungsentladung.
AT376460B (de) * 1982-09-17 1984-11-26 Kljuchko Gennady V Plasmalichtbogeneinrichtung zum auftragen von ueberzuegen
CH664768A5 (de) * 1985-06-20 1988-03-31 Balzers Hochvakuum Verfahren zur beschichtung von substraten in einer vakuumkammer.
US5133845A (en) * 1986-12-12 1992-07-28 Sorin Biomedica, S.P.A. Method for making prosthesis of polymeric material coated with biocompatible carbon
EP0334204B1 (de) * 1988-03-23 1995-04-19 Balzers Aktiengesellschaft Verfahren und Anlage zur Beschichtung von Werkstücken
DE3923390A1 (de) * 1988-07-14 1990-01-25 Canon Kk Vorrichtung zur bildung eines grossflaechigen aufgedampften films unter verwendung von wenigstens zwei getrennt gebildeten aktivierten gasen
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
DE4029270C1 (https=) * 1990-09-14 1992-04-09 Balzers Ag, Balzers, Li
JPH05275345A (ja) * 1992-03-30 1993-10-22 Nippon Sheet Glass Co Ltd プラズマｃｖｄ方法およびその装置
JPH0673538A (ja) * 1992-05-26 1994-03-15 Kobe Steel Ltd アークイオンプレーティング装置
JP3041133B2 (ja) * 1992-06-01 2000-05-15 松下電器産業株式会社 イオン化蒸着装置
US5580429A (en) * 1992-08-25 1996-12-03 Northeastern University Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation
US5753045A (en) * 1995-01-25 1998-05-19 Balzers Aktiengesellschaft Vacuum treatment system for homogeneous workpiece processing
DE59603312D1 (de) * 1995-01-25 1999-11-18 Balzers Ag Liechtenstein Verfahren zur reaktiven Schichtabscheidung
JP3732250B2 (ja) * 1995-03-30 2006-01-05 キヤノンアネルバ株式会社 インライン式成膜装置
JPH0950992A (ja) * 1995-08-04 1997-02-18 Sharp Corp 成膜装置
DE29615190U1 (de) * 1996-03-11 1996-11-28 Balzers Verschleissschutz GmbH, 55411 Bingen Anlage zur Beschichtung von Werkstücken
DE19725930C2 (de) * 1997-06-16 2002-07-18 Eberhard Moll Gmbh Dr Verfahren und Anlage zum Behandeln von Substraten mittels Ionen aus einer Niedervoltbogenentladung
US6015597A (en) * 1997-11-26 2000-01-18 3M Innovative Properties Company Method for coating diamond-like networks onto particles
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
TW552306B (en) * 1999-03-26 2003-09-11 Anelva Corp Method of removing accumulated films from the surfaces of substrate holders in film deposition apparatus, and film deposition apparatus
KR100296392B1 (ko) * 1999-06-09 2001-07-12 박호군 직류전원플라즈마화학증착법에 의한 다이아몬드막 합성장치
JP4806146B2 (ja) * 1999-07-13 2011-11-02 エリコン・トレーディング・アクチェンゲゼルシャフト，トリュープバッハ 真空処理ないしは粉末製造のための装置および方法
JP2001043530A (ja) * 1999-07-28 2001-02-16 Anelva Corp 情報記録ディスク用保護膜作成方法及び情報記録ディスク用薄膜作成装置
KR100320197B1 (ko) * 1999-08-21 2002-01-10 구자홍 직류전원 플라즈마중합 연속처리장치
US6907841B2 (en) * 2002-12-27 2005-06-21 Korea Institute Of Science And Technology Apparatus and method for synthesizing spherical diamond powder by using chemical vapor deposition method

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