HK1044571B - 等離子體材料活性沉積的方法 - Google Patents

等離子體材料活性沉積的方法 Download PDF

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Publication number
HK1044571B
HK1044571B HK02106186.9A HK02106186A HK1044571B HK 1044571 B HK1044571 B HK 1044571B HK 02106186 A HK02106186 A HK 02106186A HK 1044571 B HK1044571 B HK 1044571B
Authority
HK
Hong Kong
Prior art keywords
plasma
deposition
axis
beam axis
deposition surface
Prior art date
Application number
HK02106186.9A
Other languages
German (de)
English (en)
French (fr)
Chinese (zh)
Other versions
HK1044571A1 (en
Inventor
Karner Johann
Pedrazzini Mauro
Hollenstein Christoph
Franz David
Original Assignee
Unaxis Balzers Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Balzers Aktiengesellschaft filed Critical Unaxis Balzers Aktiengesellschaft
Publication of HK1044571A1 publication Critical patent/HK1044571A1/xx
Publication of HK1044571B publication Critical patent/HK1044571B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
HK02106186.9A 1999-04-29 2000-04-11 等離子體材料活性沉積的方法 HK1044571B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH00794/99A CH694699A5 (de) 1999-04-29 1999-04-29 Verfahren zur Herstellung von Silizium.
CH794/99 1999-04-29
PCT/CH2000/000208 WO2000066806A1 (de) 1999-04-29 2000-04-11 Verwendung eines verfahrens zur plasmaunterstützten reaktiven abscheidung von material

Publications (2)

Publication Number Publication Date
HK1044571A1 HK1044571A1 (en) 2002-10-25
HK1044571B true HK1044571B (zh) 2005-08-05

Family

ID=4195351

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02106186.9A HK1044571B (zh) 1999-04-29 2000-04-11 等離子體材料活性沉積的方法

Country Status (8)

Country Link
US (1) US6685994B1 (https=)
EP (1) EP1187945B1 (https=)
JP (1) JP2002543293A (https=)
CH (1) CH694699A5 (https=)
DE (1) DE50009169D1 (https=)
HK (1) HK1044571B (https=)
TW (1) TW507020B (https=)
WO (1) WO2000066806A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10149588B4 (de) * 2001-10-08 2017-09-07 Oerlikon Trading Ag, Trübbach Verfahren zur Diamantbeschichtung von Substraten
DE102004061632B4 (de) * 2004-12-17 2009-06-18 Auer Lighting Gmbh Innenbeschichtung von Entladungsgefäßen, Entladungsgefäße aus Quarzglas und deren Verwendung
DE102006003847B4 (de) * 2006-01-26 2011-08-18 Siemens AG, 80333 Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat
KR101046520B1 (ko) 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어
JP2011021256A (ja) * 2009-07-16 2011-02-03 Kochi Univ Of Technology ナノ結晶シリコン薄膜の成膜方法及びナノ結晶シリコン薄膜、並びに該薄膜を成膜する成膜装置
US10011920B2 (en) * 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188670A (en) * 1981-05-13 1982-11-19 Hitachi Ltd Treatment of electrically conductive member
CH664768A5 (de) * 1985-06-20 1988-03-31 Balzers Hochvakuum Verfahren zur beschichtung von substraten in einer vakuumkammer.
DE4029270C1 (https=) * 1990-09-14 1992-04-09 Balzers Ag, Balzers, Li
US5453168A (en) * 1993-08-25 1995-09-26 Tulip Memory Systems, Inc. Method for forming protective overcoatings for metallic-film magnetic-recording mediums
US5433786A (en) * 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
JP3166919B2 (ja) * 1993-10-29 2001-05-14 ウンアクシス バルツェルス アクチェンゲゼルシャフト 被覆体とこの被覆体を製造する方法およびその使用
US5888593A (en) * 1994-03-03 1999-03-30 Monsanto Company Ion beam process for deposition of highly wear-resistant optical coatings
DE59603312D1 (de) * 1995-01-25 1999-11-18 Balzers Ag Liechtenstein Verfahren zur reaktiven Schichtabscheidung
US5858477A (en) * 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
JP2965293B1 (ja) * 1998-11-10 1999-10-18 川崎重工業株式会社 電子ビーム励起プラズマ発生装置

Also Published As

Publication number Publication date
EP1187945A1 (de) 2002-03-20
US6685994B1 (en) 2004-02-03
TW507020B (en) 2002-10-21
JP2002543293A (ja) 2002-12-17
HK1044571A1 (en) 2002-10-25
DE50009169D1 (de) 2005-02-10
EP1187945B1 (de) 2005-01-05
WO2000066806A1 (de) 2000-11-09
CH694699A5 (de) 2005-06-15

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100411