TW507020B - Method to plasma-supported reactive processing of working part - Google Patents
Method to plasma-supported reactive processing of working part Download PDFInfo
- Publication number
- TW507020B TW507020B TW089107450A TW89107450A TW507020B TW 507020 B TW507020 B TW 507020B TW 089107450 A TW089107450 A TW 089107450A TW 89107450 A TW89107450 A TW 89107450A TW 507020 B TW507020 B TW 507020B
- Authority
- TW
- Taiwan
- Prior art keywords
- patent application
- plasma
- item
- axis
- deposition
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000009717 reactive processing Methods 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 claims description 61
- 230000008021 deposition Effects 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000010891 electric arc Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 230000002079 cooperative effect Effects 0.000 description 7
- 229910021425 protocrystalline silicon Inorganic materials 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHRSUDSXCMQTMA-PJHHCJLFSA-N 6alpha-methylprednisolone Chemical compound C([C@@]12C)=CC(=O)C=C1[C@@H](C)C[C@@H]1[C@@H]2[C@@H](O)C[C@]2(C)[C@@](O)(C(=O)CO)CC[C@H]21 VHRSUDSXCMQTMA-PJHHCJLFSA-N 0.000 description 1
- 101100537937 Caenorhabditis elegans arc-1 gene Proteins 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH00794/99A CH694699A5 (de) | 1999-04-29 | 1999-04-29 | Verfahren zur Herstellung von Silizium. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW507020B true TW507020B (en) | 2002-10-21 |
Family
ID=4195351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089107450A TW507020B (en) | 1999-04-29 | 2000-04-20 | Method to plasma-supported reactive processing of working part |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6685994B1 (https=) |
| EP (1) | EP1187945B1 (https=) |
| JP (1) | JP2002543293A (https=) |
| CH (1) | CH694699A5 (https=) |
| DE (1) | DE50009169D1 (https=) |
| HK (1) | HK1044571B (https=) |
| TW (1) | TW507020B (https=) |
| WO (1) | WO2000066806A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10149588B4 (de) * | 2001-10-08 | 2017-09-07 | Oerlikon Trading Ag, Trübbach | Verfahren zur Diamantbeschichtung von Substraten |
| DE102004061632B4 (de) * | 2004-12-17 | 2009-06-18 | Auer Lighting Gmbh | Innenbeschichtung von Entladungsgefäßen, Entladungsgefäße aus Quarzglas und deren Verwendung |
| DE102006003847B4 (de) * | 2006-01-26 | 2011-08-18 | Siemens AG, 80333 | Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat |
| KR101046520B1 (ko) | 2007-09-07 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어 |
| JP2011021256A (ja) * | 2009-07-16 | 2011-02-03 | Kochi Univ Of Technology | ナノ結晶シリコン薄膜の成膜方法及びナノ結晶シリコン薄膜、並びに該薄膜を成膜する成膜装置 |
| US10011920B2 (en) * | 2011-02-23 | 2018-07-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57188670A (en) * | 1981-05-13 | 1982-11-19 | Hitachi Ltd | Treatment of electrically conductive member |
| CH664768A5 (de) * | 1985-06-20 | 1988-03-31 | Balzers Hochvakuum | Verfahren zur beschichtung von substraten in einer vakuumkammer. |
| DE4029270C1 (https=) * | 1990-09-14 | 1992-04-09 | Balzers Ag, Balzers, Li | |
| US5453168A (en) * | 1993-08-25 | 1995-09-26 | Tulip Memory Systems, Inc. | Method for forming protective overcoatings for metallic-film magnetic-recording mediums |
| US5433786A (en) * | 1993-08-27 | 1995-07-18 | The Dow Chemical Company | Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein |
| JP3166919B2 (ja) * | 1993-10-29 | 2001-05-14 | ウンアクシス バルツェルス アクチェンゲゼルシャフト | 被覆体とこの被覆体を製造する方法およびその使用 |
| US5888593A (en) * | 1994-03-03 | 1999-03-30 | Monsanto Company | Ion beam process for deposition of highly wear-resistant optical coatings |
| DE59603312D1 (de) * | 1995-01-25 | 1999-11-18 | Balzers Ag Liechtenstein | Verfahren zur reaktiven Schichtabscheidung |
| US5858477A (en) * | 1996-12-10 | 1999-01-12 | Akashic Memories Corporation | Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon |
| JP2965293B1 (ja) * | 1998-11-10 | 1999-10-18 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
-
1999
- 1999-04-29 CH CH00794/99A patent/CH694699A5/de not_active IP Right Cessation
-
2000
- 2000-04-11 US US10/031,258 patent/US6685994B1/en not_active Expired - Fee Related
- 2000-04-11 HK HK02106186.9A patent/HK1044571B/zh not_active IP Right Cessation
- 2000-04-11 DE DE50009169T patent/DE50009169D1/de not_active Expired - Lifetime
- 2000-04-11 WO PCT/CH2000/000208 patent/WO2000066806A1/de not_active Ceased
- 2000-04-11 JP JP2000615426A patent/JP2002543293A/ja active Pending
- 2000-04-11 EP EP00914006A patent/EP1187945B1/de not_active Expired - Lifetime
- 2000-04-20 TW TW089107450A patent/TW507020B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| HK1044571B (zh) | 2005-08-05 |
| EP1187945A1 (de) | 2002-03-20 |
| US6685994B1 (en) | 2004-02-03 |
| JP2002543293A (ja) | 2002-12-17 |
| HK1044571A1 (en) | 2002-10-25 |
| DE50009169D1 (de) | 2005-02-10 |
| EP1187945B1 (de) | 2005-01-05 |
| WO2000066806A1 (de) | 2000-11-09 |
| CH694699A5 (de) | 2005-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |