JP2002532828A - プラズマ発生のための中空の陰極のアレー - Google Patents
プラズマ発生のための中空の陰極のアレーInfo
- Publication number
- JP2002532828A JP2002532828A JP2000587353A JP2000587353A JP2002532828A JP 2002532828 A JP2002532828 A JP 2002532828A JP 2000587353 A JP2000587353 A JP 2000587353A JP 2000587353 A JP2000587353 A JP 2000587353A JP 2002532828 A JP2002532828 A JP 2002532828A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- cathode assembly
- cells
- assembly
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 239000003989 dielectric material Substances 0.000 claims description 10
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- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 9
- 229930195733 hydrocarbon Natural products 0.000 claims description 9
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- 239000004215 Carbon black (E152) Substances 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 6
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 6
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 6
- 230000001788 irregular Effects 0.000 claims description 6
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 6
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- 230000035699 permeability Effects 0.000 claims description 4
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 claims description 4
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 claims description 3
- 239000001361 adipic acid Substances 0.000 claims description 3
- 235000011037 adipic acid Nutrition 0.000 claims description 3
- TVIDDXQYHWJXFK-UHFFFAOYSA-N dodecanedioic acid Chemical compound OC(=O)CCCCCCCCCCC(O)=O TVIDDXQYHWJXFK-UHFFFAOYSA-N 0.000 claims description 3
- 229920001519 homopolymer Polymers 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
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- 125000003827 glycol group Chemical group 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 125000001624 naphthyl group Chemical group 0.000 claims 1
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- 210000002381 plasma Anatomy 0.000 description 117
- 210000004027 cell Anatomy 0.000 description 94
- 239000007789 gas Substances 0.000 description 52
- 238000012937 correction Methods 0.000 description 21
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 20
- 239000010949 copper Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- 238000011282 treatment Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
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- 238000009832 plasma treatment Methods 0.000 description 7
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- 238000006116 polymerization reaction Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
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- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 210000002421 cell wall Anatomy 0.000 description 2
- 238000007385 chemical modification Methods 0.000 description 2
- 230000005251 gamma ray Effects 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000000877 morphologic effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
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- GQEZCXVZFLOKMC-UHFFFAOYSA-N 1-hexadecene Chemical group CCCCCCCCCCCCCCC=C GQEZCXVZFLOKMC-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
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- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UHPJWJRERDJHOJ-UHFFFAOYSA-N ethene;naphthalene-1-carboxylic acid Chemical compound C=C.C1=CC=C2C(C(=O)O)=CC=CC2=C1 UHPJWJRERDJHOJ-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010103 injection stretch blow moulding Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
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- 239000002344 surface layer Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32596—Hollow cathodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11111698P | 1998-12-07 | 1998-12-07 | |
| US60/111,116 | 1998-12-07 | ||
| PCT/US1999/028841 WO2000034979A1 (en) | 1998-12-07 | 1999-12-06 | Hollow cathode array for plasma generation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002532828A true JP2002532828A (ja) | 2002-10-02 |
Family
ID=22336697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000587353A Pending JP2002532828A (ja) | 1998-12-07 | 1999-12-06 | プラズマ発生のための中空の陰極のアレー |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP1141996A1 (de) |
| JP (1) | JP2002532828A (de) |
| KR (1) | KR20010101137A (de) |
| CN (1) | CN1331836A (de) |
| AU (1) | AU1842200A (de) |
| CA (1) | CA2348653A1 (de) |
| TW (1) | TW470995B (de) |
| WO (1) | WO2000034979A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012038682A (ja) * | 2010-08-11 | 2012-02-23 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ制御方法 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10120405B4 (de) * | 2001-04-25 | 2008-08-21 | Je Plasmaconsult Gmbh | Vorrichtung zur Erzeugung eines Niedertemperatur-Plasmas |
| KR20040022639A (ko) * | 2002-09-09 | 2004-03-16 | 주식회사 네오바이오텍 | 탄소계 물질 박막 형성방법 |
| DE10256663B3 (de) * | 2002-12-04 | 2005-10-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasentladungslampe für EUV-Strahlung |
| SE529058C2 (sv) | 2005-07-08 | 2007-04-17 | Plasma Surgical Invest Ltd | Plasmaalstrande anordning, plasmakirurgisk anordning, användning av en plasmakirurgisk anordning och förfarande för att bilda ett plasma |
| SE529056C2 (sv) | 2005-07-08 | 2007-04-17 | Plasma Surgical Invest Ltd | Plasmaalstrande anordning, plasmakirurgisk anordning och användning av en plasmakirurgisk anordning |
| SE529053C2 (sv) | 2005-07-08 | 2007-04-17 | Plasma Surgical Invest Ltd | Plasmaalstrande anordning, plasmakirurgisk anordning och användning av en plasmakirurgisk anordning |
| JP4984285B2 (ja) * | 2007-01-23 | 2012-07-25 | 独立行政法人産業技術総合研究所 | 高密度プラズマ処理装置 |
| US8742282B2 (en) * | 2007-04-16 | 2014-06-03 | General Electric Company | Ablative plasma gun |
| CA2695902C (en) * | 2007-08-06 | 2016-01-05 | Plasma Surgical Investments Limited | Cathode assembly and method for pulsed plasma generation |
| US8735766B2 (en) | 2007-08-06 | 2014-05-27 | Plasma Surgical Investments Limited | Cathode assembly and method for pulsed plasma generation |
| US8613742B2 (en) | 2010-01-29 | 2013-12-24 | Plasma Surgical Investments Limited | Methods of sealing vessels using plasma |
| US9089319B2 (en) | 2010-07-22 | 2015-07-28 | Plasma Surgical Investments Limited | Volumetrically oscillating plasma flows |
| DE102012201956A1 (de) * | 2012-02-09 | 2013-08-14 | Krones Ag | Hohlkathoden-Gaslanze für die Innenbeschichtung von Behältern |
| KR101506305B1 (ko) * | 2012-12-17 | 2015-03-26 | 한국생산기술연구원 | 중공관 단위체로 구성된 음극을 포함하는 질화처리용 플라즈마 장치 및 그를 이용한 플라즈마 질화처리 방법 |
| CN103730320B (zh) * | 2013-12-23 | 2016-09-28 | 苏州市奥普斯等离子体科技有限公司 | 一种微空心阴极等离子体处理装置 |
| US20160093477A1 (en) | 2014-09-25 | 2016-03-31 | Apple Inc. | Durable 3d geometry conformal anti-reflection coating |
| WO2022047227A2 (en) | 2020-08-28 | 2022-03-03 | Plasma Surgical Investments Limited | Systems, methods, and devices for generating predominantly radially expanded plasma flow |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4637853A (en) * | 1985-07-29 | 1987-01-20 | International Business Machines Corporation | Hollow cathode enhanced plasma for high rate reactive ion etching and deposition |
| JPS644481A (en) * | 1987-06-24 | 1989-01-09 | Minoru Sugawara | Parallel-plate discharge electrode |
| JPH0266941A (ja) * | 1988-08-31 | 1990-03-07 | Nec Corp | エッチング装置 |
| SE503260C2 (sv) * | 1992-06-15 | 1996-04-29 | Akerlund & Rausing Ab | Förfarande för framställning av en barriärfilm medelst plasmabehandling |
| CA2126731A1 (en) * | 1993-07-12 | 1995-01-13 | Frank Jansen | Hollow cathode array and method of cleaning sheet stock therewith |
| DE19755902C1 (de) * | 1997-12-08 | 1999-05-12 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zum Vergüten von Oberflächen |
-
1999
- 1999-12-06 KR KR1020017007066A patent/KR20010101137A/ko not_active Application Discontinuation
- 1999-12-06 JP JP2000587353A patent/JP2002532828A/ja active Pending
- 1999-12-06 CA CA002348653A patent/CA2348653A1/en not_active Abandoned
- 1999-12-06 AU AU18422/00A patent/AU1842200A/en not_active Abandoned
- 1999-12-06 CN CN99814158A patent/CN1331836A/zh active Pending
- 1999-12-06 WO PCT/US1999/028841 patent/WO2000034979A1/en not_active Application Discontinuation
- 1999-12-06 EP EP99961943A patent/EP1141996A1/de not_active Withdrawn
- 1999-12-07 TW TW088121388A patent/TW470995B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012038682A (ja) * | 2010-08-11 | 2012-02-23 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ制御方法 |
| US8829387B2 (en) | 2010-08-11 | 2014-09-09 | Tokyo Electron Limited | Plasma processing apparatus having hollow electrode on periphery and plasma control method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000034979A1 (en) | 2000-06-15 |
| CA2348653A1 (en) | 2000-06-15 |
| CN1331836A (zh) | 2002-01-16 |
| TW470995B (en) | 2002-01-01 |
| AU1842200A (en) | 2000-06-26 |
| EP1141996A1 (de) | 2001-10-10 |
| KR20010101137A (ko) | 2001-11-14 |
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