JP2002523736A - 圧力センサおよびその形成方法 - Google Patents
圧力センサおよびその形成方法Info
- Publication number
- JP2002523736A JP2002523736A JP2000566649A JP2000566649A JP2002523736A JP 2002523736 A JP2002523736 A JP 2002523736A JP 2000566649 A JP2000566649 A JP 2000566649A JP 2000566649 A JP2000566649 A JP 2000566649A JP 2002523736 A JP2002523736 A JP 2002523736A
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- detection elements
- diaphragm
- switching circuit
- electronic switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 102100033041 Carbonic anhydrase 13 Human genes 0.000 description 1
- 101000867860 Homo sapiens Carbonic anhydrase 13 Proteins 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/137,765 US6142021A (en) | 1998-08-21 | 1998-08-21 | Selectable pressure sensor |
| US09/137,765 | 1998-08-21 | ||
| PCT/US1999/018474 WO2000011441A2 (en) | 1998-08-21 | 1999-08-12 | Pressure sensor and method of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002523736A true JP2002523736A (ja) | 2002-07-30 |
| JP2002523736A5 JP2002523736A5 (enExample) | 2006-10-05 |
Family
ID=22478952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000566649A Pending JP2002523736A (ja) | 1998-08-21 | 1999-08-12 | 圧力センサおよびその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6142021A (enExample) |
| EP (1) | EP1110067B1 (enExample) |
| JP (1) | JP2002523736A (enExample) |
| DE (1) | DE69915651T2 (enExample) |
| ES (1) | ES2217809T3 (enExample) |
| WO (1) | WO2000011441A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6790699B2 (en) | 2002-07-10 | 2004-09-14 | Robert Bosch Gmbh | Method for manufacturing a semiconductor device |
| DE102007062711A1 (de) * | 2007-12-27 | 2009-07-02 | Robert Bosch Gmbh | Halbleiterwafer mit einer Vielzahl von Sensorelementen und Verfahren zum Vermessen von Sensorelementen auf einem Halbleiterwafer |
| US7926353B2 (en) * | 2009-01-16 | 2011-04-19 | Infineon Technologies Ag | Pressure sensor including switchable sensor elements |
| GB2515715A (en) | 2012-11-21 | 2015-01-07 | Continental Automotive Systems | Piezoresistive transducer with low thermal noise |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3456226A (en) * | 1967-10-27 | 1969-07-15 | Conrac Corp | Strain gage configuration |
| JPS5217780A (en) * | 1975-07-04 | 1977-02-09 | Hitachi Ltd | Pressure convertor with semi-conductor elements |
| US4322980A (en) * | 1979-11-08 | 1982-04-06 | Hitachi, Ltd. | Semiconductor pressure sensor having plural pressure sensitive diaphragms and method |
| US4400681A (en) * | 1981-02-23 | 1983-08-23 | General Motors Corporation | Semiconductor pressure sensor with slanted resistors |
| CA1186163A (en) * | 1982-01-04 | 1985-04-30 | James B. Starr | Semiconductor pressure transducer |
| US4539554A (en) * | 1982-10-18 | 1985-09-03 | At&T Bell Laboratories | Analog integrated circuit pressure sensor |
| JPS6077470A (ja) * | 1983-10-04 | 1985-05-02 | Nec Corp | ダイアフラム型半導体圧力センサ |
| US4996082A (en) * | 1985-04-26 | 1991-02-26 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
| US4885621A (en) * | 1988-05-02 | 1989-12-05 | Delco Electronics Corporation | Monolithic pressure sensitive integrated circuit |
| US5058435A (en) * | 1989-06-22 | 1991-10-22 | Ic Sensors, Inc. | Single diaphragm transducer with multiple sensing elements |
| US5220838A (en) * | 1991-03-28 | 1993-06-22 | The Foxboro Company | Overpressure-protected, differential pressure sensor and method of making the same |
| US5264075A (en) * | 1992-11-06 | 1993-11-23 | Ford Motor Company | Fabrication methods for silicon/glass capacitive absolute pressure sensors |
| US5427975A (en) * | 1993-05-10 | 1995-06-27 | Delco Electronics Corporation | Method of micromachining an integrated sensor on the surface of a silicon wafer |
| WO1995002164A1 (en) * | 1993-07-07 | 1995-01-19 | Ic Sensors, Inc. | Pulsed thermal flow sensor system |
| DE19527687A1 (de) * | 1995-07-28 | 1997-01-30 | Bosch Gmbh Robert | Sensor |
| US5672808A (en) * | 1996-06-11 | 1997-09-30 | Moore Products Co. | Transducer having redundant pressure sensors |
-
1998
- 1998-08-21 US US09/137,765 patent/US6142021A/en not_active Expired - Lifetime
-
1999
- 1999-08-12 EP EP99946594A patent/EP1110067B1/en not_active Expired - Lifetime
- 1999-08-12 JP JP2000566649A patent/JP2002523736A/ja active Pending
- 1999-08-12 ES ES99946594T patent/ES2217809T3/es not_active Expired - Lifetime
- 1999-08-12 DE DE69915651T patent/DE69915651T2/de not_active Expired - Lifetime
- 1999-08-12 WO PCT/US1999/018474 patent/WO2000011441A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP1110067A4 (en) | 2001-10-24 |
| EP1110067A2 (en) | 2001-06-27 |
| DE69915651D1 (de) | 2004-04-22 |
| DE69915651T2 (de) | 2004-08-19 |
| ES2217809T3 (es) | 2004-11-01 |
| EP1110067B1 (en) | 2004-03-17 |
| US6142021A (en) | 2000-11-07 |
| WO2000011441A3 (en) | 2000-06-02 |
| WO2000011441A2 (en) | 2000-03-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060814 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060814 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090528 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090601 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091029 |