JP2002510860A5 - - Google Patents
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- Publication number
- JP2002510860A5 JP2002510860A5 JP2000541727A JP2000541727A JP2002510860A5 JP 2002510860 A5 JP2002510860 A5 JP 2002510860A5 JP 2000541727 A JP2000541727 A JP 2000541727A JP 2000541727 A JP2000541727 A JP 2000541727A JP 2002510860 A5 JP2002510860 A5 JP 2002510860A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/052,997 | 1998-03-31 | ||
| US09/052,997 US5935874A (en) | 1998-03-31 | 1998-03-31 | Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system |
| PCT/US1999/006995 WO1999050897A1 (en) | 1998-03-31 | 1999-03-30 | Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002510860A JP2002510860A (ja) | 2002-04-09 |
| JP2002510860A5 true JP2002510860A5 (https=) | 2006-07-20 |
Family
ID=21981252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000541727A Withdrawn JP2002510860A (ja) | 1998-03-31 | 1999-03-30 | 高密度プラズマ処理システムにより基板のシリコン層にトレンチを形成するための技術 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5935874A (https=) |
| EP (1) | EP1070342B1 (https=) |
| JP (1) | JP2002510860A (https=) |
| KR (1) | KR100574141B1 (https=) |
| AT (1) | ATE389238T1 (https=) |
| DE (1) | DE69938342T2 (https=) |
| TW (1) | TW520405B (https=) |
| WO (1) | WO1999050897A1 (https=) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6107192A (en) | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
| DE19826382C2 (de) * | 1998-06-12 | 2002-02-07 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| US6642149B2 (en) * | 1998-09-16 | 2003-11-04 | Tokyo Electron Limited | Plasma processing method |
| US7053002B2 (en) * | 1998-12-04 | 2006-05-30 | Applied Materials, Inc | Plasma preclean with argon, helium, and hydrogen gases |
| US6355564B1 (en) * | 1999-08-26 | 2002-03-12 | Advanced Micro Devices, Inc. | Selective back side reactive ion etch |
| US6389207B1 (en) * | 1999-12-13 | 2002-05-14 | Corning Incorporated | Dispersion managed fiber |
| US6500356B2 (en) * | 2000-03-27 | 2002-12-31 | Applied Materials, Inc. | Selectively etching silicon using fluorine without plasma |
| US20030010354A1 (en) * | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
| US6372567B1 (en) | 2000-04-20 | 2002-04-16 | Infineon Technologies Ag | Control of oxide thickness in vertical transistor structures |
| US6843258B2 (en) * | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
| US6653237B2 (en) * | 2001-06-27 | 2003-11-25 | Applied Materials, Inc. | High resist-selectivity etch for silicon trench etch applications |
| JP3527901B2 (ja) * | 2001-07-24 | 2004-05-17 | 株式会社日立製作所 | プラズマエッチング方法 |
| US20030121796A1 (en) * | 2001-11-26 | 2003-07-03 | Siegele Stephen H | Generation and distribution of molecular fluorine within a fabrication facility |
| US20040037768A1 (en) * | 2001-11-26 | 2004-02-26 | Robert Jackson | Method and system for on-site generation and distribution of a process gas |
| US20090001524A1 (en) * | 2001-11-26 | 2009-01-01 | Siegele Stephen H | Generation and distribution of a fluorine gas |
| US20040151656A1 (en) * | 2001-11-26 | 2004-08-05 | Siegele Stephen H. | Modular molecular halogen gas generation system |
| US6905968B2 (en) * | 2001-12-12 | 2005-06-14 | Applied Materials, Inc. | Process for selectively etching dielectric layers |
| KR100430583B1 (ko) * | 2001-12-20 | 2004-05-10 | 동부전자 주식회사 | 플라즈마 에칭 장비를 이용한 반도체 소자의 프로파일조절 방법 |
| US6921724B2 (en) * | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
| US6706586B1 (en) | 2002-10-23 | 2004-03-16 | International Business Machines Corporation | Method of trench sidewall enhancement |
| US6797610B1 (en) | 2002-12-11 | 2004-09-28 | International Business Machines Corporation | Sublithographic patterning using microtrenching |
| DE10331526A1 (de) * | 2003-07-11 | 2005-02-03 | Infineon Technologies Ag | Verfahren zum anisotropen Ätzen einer Ausnehmung in ein Siliziumsubstrat und Verwendung einer Plasmaätzanlage |
| JP4723871B2 (ja) * | 2004-06-23 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置 |
| US20060054183A1 (en) * | 2004-08-27 | 2006-03-16 | Thomas Nowak | Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber |
| US20060090773A1 (en) * | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
| JP5154013B2 (ja) * | 2005-10-12 | 2013-02-27 | パナソニック株式会社 | ドライエッチング方法 |
| KR100814901B1 (ko) * | 2007-05-22 | 2008-03-19 | 한국전자통신연구원 | 건식 식각 공정을 이용한 산화물 박막 트랜지스터 소자의제조방법 |
| US7704849B2 (en) * | 2007-12-03 | 2010-04-27 | Micron Technology, Inc. | Methods of forming trench isolation in silicon of a semiconductor substrate by plasma |
| US20130288485A1 (en) * | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| JP6859088B2 (ja) * | 2016-12-14 | 2021-04-14 | エイブリック株式会社 | 半導体装置の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4895810A (en) * | 1986-03-21 | 1990-01-23 | Advanced Power Technology, Inc. | Iopographic pattern delineated power mosfet with profile tailored recessed source |
| US5182234A (en) * | 1986-03-21 | 1993-01-26 | Advanced Power Technology, Inc. | Profile tailored trench etch using a SF6 -O2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen |
| US4726879A (en) * | 1986-09-08 | 1988-02-23 | International Business Machines Corporation | RIE process for etching silicon isolation trenches and polycides with vertical surfaces |
| FR2616030A1 (fr) * | 1987-06-01 | 1988-12-02 | Commissariat Energie Atomique | Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede |
| JPH02138472A (ja) * | 1988-11-16 | 1990-05-28 | Canon Inc | 推積膜形成装置の洗浄方法 |
| JP2519364B2 (ja) * | 1990-12-03 | 1996-07-31 | アプライド マテリアルズ インコーポレイテッド | Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ |
| US5277752A (en) * | 1992-10-19 | 1994-01-11 | At&T Bell Laboratories | Method for controlling plasma processes |
| US5783492A (en) * | 1994-03-04 | 1998-07-21 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus, and plasma generating apparatus |
| US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
| US5605603A (en) * | 1995-03-29 | 1997-02-25 | International Business Machines Corporation | Deep trench process |
-
1998
- 1998-03-31 US US09/052,997 patent/US5935874A/en not_active Expired - Lifetime
-
1999
- 1999-03-26 TW TW088104862A patent/TW520405B/zh not_active IP Right Cessation
- 1999-03-30 KR KR1020007010473A patent/KR100574141B1/ko not_active Expired - Lifetime
- 1999-03-30 WO PCT/US1999/006995 patent/WO1999050897A1/en not_active Ceased
- 1999-03-30 JP JP2000541727A patent/JP2002510860A/ja not_active Withdrawn
- 1999-03-30 AT AT99916217T patent/ATE389238T1/de not_active IP Right Cessation
- 1999-03-30 EP EP99916217A patent/EP1070342B1/en not_active Expired - Lifetime
- 1999-03-30 DE DE69938342T patent/DE69938342T2/de not_active Expired - Fee Related