JP2002500434A - 構造化基板の連続的かつ無マスクパターン化方法 - Google Patents

構造化基板の連続的かつ無マスクパターン化方法

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Publication number
JP2002500434A
JP2002500434A JP2000526846A JP2000526846A JP2002500434A JP 2002500434 A JP2002500434 A JP 2002500434A JP 2000526846 A JP2000526846 A JP 2000526846A JP 2000526846 A JP2000526846 A JP 2000526846A JP 2002500434 A JP2002500434 A JP 2002500434A
Authority
JP
Japan
Prior art keywords
filler
substrate
protrusions
ridges
structured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000526846A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002500434A5 (enExample
Inventor
エス． モシュレフザデー，ロバート
ジェイ． ポカーニー，リチャード
パディヤス，ラグヒュネイス
エム． ワース，ウェイン
Original Assignee
ミネソタ マイニング アンド マニュファクチャリング カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ミネソタ マイニング アンド マニュファクチャリング カンパニー filed Critical ミネソタ マイニング アンド マニュファクチャリング カンパニー
Publication of JP2002500434A publication Critical patent/JP2002500434A/ja
Publication of JP2002500434A5 publication Critical patent/JP2002500434A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000526846A 1997-12-29 1998-05-04 構造化基板の連続的かつ無マスクパターン化方法 Pending JP2002500434A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/999,287 US6077560A (en) 1997-12-29 1997-12-29 Method for continuous and maskless patterning of structured substrates
US08/999,287 1997-12-29
PCT/US1998/008995 WO1999034256A1 (en) 1997-12-29 1998-05-04 Method for continuous and maskless patterning of structured substrates

Publications (2)

Publication Number Publication Date
JP2002500434A true JP2002500434A (ja) 2002-01-08
JP2002500434A5 JP2002500434A5 (enExample) 2005-12-22

Family

ID=25546145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000526846A Pending JP2002500434A (ja) 1997-12-29 1998-05-04 構造化基板の連続的かつ無マスクパターン化方法

Country Status (7)

Country Link
US (1) US6077560A (enExample)
EP (1) EP1044396B1 (enExample)
JP (1) JP2002500434A (enExample)
KR (1) KR100567635B1 (enExample)
CA (1) CA2315026A1 (enExample)
DE (1) DE69841752D1 (enExample)
WO (1) WO1999034256A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524675B1 (en) 1999-05-13 2003-02-25 3M Innovative Properties Company Adhesive-back articles
KR20010082831A (ko) * 2000-02-21 2001-08-31 구본준, 론 위라하디락사 액정표시장치의 제조방법
WO2002092242A1 (en) * 2001-05-16 2002-11-21 Board Of Regents Selective deposition of materials for the fabrication of interconnects and contacts on semiconductors devices
US20040067341A1 (en) * 2002-10-02 2004-04-08 Shartle Robert Justice Scratch-resistant metal films and metallized surfaces and methods of fabricating them
JP3801158B2 (ja) * 2002-11-19 2006-07-26 セイコーエプソン株式会社 多層配線基板の製造方法、多層配線基板、電子デバイス及び電子機器
TW594423B (en) * 2003-08-28 2004-06-21 Ind Tech Res Inst A color filter manufacturing method for a plastic substrate
US7012017B2 (en) * 2004-01-29 2006-03-14 3M Innovative Properties Company Partially etched dielectric film with conductive features
US7528075B2 (en) * 2004-02-25 2009-05-05 Hrl Laboratories, Llc Self-masking defect removing method
EP1840657A1 (en) * 2006-03-28 2007-10-03 Carl Zeiss SMT AG Support structure for temporarily supporting a substrate
US7543974B2 (en) 2007-03-06 2009-06-09 Skc Haas Display Films Co., Ltd. Light redirecting film having variable thickness
US7530726B2 (en) 2007-03-06 2009-05-12 Skc Haas Display Films Co., Ltd. Light redirecting film having discontinuous coating
WO2009108334A2 (en) * 2008-02-28 2009-09-03 New York University Method and apparatus for providing input to a processor, and a sensor pad
US8957484B2 (en) * 2008-02-29 2015-02-17 University Of Washington Piezoelectric substrate, fabrication and related methods
WO2010002679A2 (en) * 2008-06-30 2010-01-07 3M Innovative Properties Company Method of forming a microstructure
JP5319769B2 (ja) * 2008-06-30 2013-10-16 スリーエム イノベイティブ プロパティズ カンパニー パターン形成された基板の形成方法
CN103547702B (zh) 2010-06-04 2016-08-10 阿德文泰克全球有限公司 利用编码孔径进行的阴影掩模的对准

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US1983720A (en) * 1934-01-26 1934-12-11 Pittsburgh Plate Glass Co Ornamental glass and method of making the same
US3244556A (en) * 1962-10-01 1966-04-05 Xerox Corp Abrasion for thin film resistance control
US3287161A (en) * 1962-10-01 1966-11-22 Xerox Corp Method for forming a thin film resistor
JPS6489470A (en) * 1987-09-30 1989-04-03 Mitsubishi Electric Corp Manufacture of semiconductor device
DE3888184D1 (de) * 1988-11-17 1994-04-07 Ibm Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich.
US5156986A (en) * 1990-10-05 1992-10-20 General Electric Company Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration
JP3173803B2 (ja) * 1990-12-10 2001-06-04 キヤノン株式会社 回折格子の作成方法
US5538753A (en) * 1991-10-14 1996-07-23 Landis & Gyr Betriebs Ag Security element
KR960003864B1 (ko) * 1992-01-06 1996-03-23 삼성전자주식회사 반도체 메모리장치 및 그 제조방법
US5268782A (en) * 1992-01-16 1993-12-07 Minnesota Mining And Manufacturing Company Micro-ridged, polymeric liquid crystal display substrate and display device
US5292625A (en) * 1992-04-03 1994-03-08 Minnesota Mining And Manufacturing Company Method for selectively exposing an uneven substrate surface
US5378494A (en) * 1994-02-18 1995-01-03 Minnesota Mining And Manufacturing Company Method of applying a thin coating on the lower surface of a bilevel substrate
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US5686337A (en) * 1996-01-11 1997-11-11 Vanguard International Semiconductor Corporation Method for fabricating stacked capacitors in a DRAM cell

Also Published As

Publication number Publication date
US6077560A (en) 2000-06-20
EP1044396A1 (en) 2000-10-18
KR100567635B1 (ko) 2006-04-05
WO1999034256A1 (en) 1999-07-08
CA2315026A1 (en) 1999-07-08
DE69841752D1 (de) 2010-08-12
KR20010033690A (ko) 2001-04-25
EP1044396B1 (en) 2010-06-30

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