DE69841752D1 - Methode zur kontinuierlichen und maskenlosen herstellung von strukturen auf bereits strukturierten substraten - Google Patents

Methode zur kontinuierlichen und maskenlosen herstellung von strukturen auf bereits strukturierten substraten

Info

Publication number
DE69841752D1
DE69841752D1 DE69841752T DE69841752T DE69841752D1 DE 69841752 D1 DE69841752 D1 DE 69841752D1 DE 69841752 T DE69841752 T DE 69841752T DE 69841752 T DE69841752 T DE 69841752T DE 69841752 D1 DE69841752 D1 DE 69841752D1
Authority
DE
Germany
Prior art keywords
mask
structures
continuous
structured substrates
free manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841752T
Other languages
German (de)
English (en)
Inventor
Robert S Moshrefzadeh
Richard J Pokorny
Raghunath Padiyath
Wayne M Wirth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Application granted granted Critical
Publication of DE69841752D1 publication Critical patent/DE69841752D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
DE69841752T 1997-12-29 1998-05-04 Methode zur kontinuierlichen und maskenlosen herstellung von strukturen auf bereits strukturierten substraten Expired - Lifetime DE69841752D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/999,287 US6077560A (en) 1997-12-29 1997-12-29 Method for continuous and maskless patterning of structured substrates
PCT/US1998/008995 WO1999034256A1 (en) 1997-12-29 1998-05-04 Method for continuous and maskless patterning of structured substrates

Publications (1)

Publication Number Publication Date
DE69841752D1 true DE69841752D1 (de) 2010-08-12

Family

ID=25546145

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841752T Expired - Lifetime DE69841752D1 (de) 1997-12-29 1998-05-04 Methode zur kontinuierlichen und maskenlosen herstellung von strukturen auf bereits strukturierten substraten

Country Status (7)

Country Link
US (1) US6077560A (enExample)
EP (1) EP1044396B1 (enExample)
JP (1) JP2002500434A (enExample)
KR (1) KR100567635B1 (enExample)
CA (1) CA2315026A1 (enExample)
DE (1) DE69841752D1 (enExample)
WO (1) WO1999034256A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524675B1 (en) 1999-05-13 2003-02-25 3M Innovative Properties Company Adhesive-back articles
KR20010082831A (ko) * 2000-02-21 2001-08-31 구본준, 론 위라하디락사 액정표시장치의 제조방법
US20020197854A1 (en) * 2001-05-16 2002-12-26 Bard Allen J. Selective deposition of materials for the fabrication of interconnects and contacts on semiconductor devices
US20040067341A1 (en) * 2002-10-02 2004-04-08 Shartle Robert Justice Scratch-resistant metal films and metallized surfaces and methods of fabricating them
JP3801158B2 (ja) * 2002-11-19 2006-07-26 セイコーエプソン株式会社 多層配線基板の製造方法、多層配線基板、電子デバイス及び電子機器
TW594423B (en) * 2003-08-28 2004-06-21 Ind Tech Res Inst A color filter manufacturing method for a plastic substrate
US7012017B2 (en) * 2004-01-29 2006-03-14 3M Innovative Properties Company Partially etched dielectric film with conductive features
US7528075B2 (en) * 2004-02-25 2009-05-05 Hrl Laboratories, Llc Self-masking defect removing method
EP1840657A1 (en) * 2006-03-28 2007-10-03 Carl Zeiss SMT AG Support structure for temporarily supporting a substrate
US7543974B2 (en) * 2007-03-06 2009-06-09 Skc Haas Display Films Co., Ltd. Light redirecting film having variable thickness
US7530726B2 (en) * 2007-03-06 2009-05-12 Skc Haas Display Films Co., Ltd. Light redirecting film having discontinuous coating
EP2247998B1 (en) * 2008-02-28 2019-04-10 New York University Method and apparatus for providing input to a processor, and a sensor pad
US8957484B2 (en) * 2008-02-29 2015-02-17 University Of Washington Piezoelectric substrate, fabrication and related methods
CN102124825B (zh) * 2008-06-30 2014-04-30 3M创新有限公司 形成图案化基材的方法
JP2011526844A (ja) 2008-06-30 2011-10-20 スリーエム イノベイティブ プロパティズ カンパニー ミクロ構造を形成する方法
CN103547702B (zh) 2010-06-04 2016-08-10 阿德文泰克全球有限公司 利用编码孔径进行的阴影掩模的对准

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1983720A (en) * 1934-01-26 1934-12-11 Pittsburgh Plate Glass Co Ornamental glass and method of making the same
US3287161A (en) * 1962-10-01 1966-11-22 Xerox Corp Method for forming a thin film resistor
US3244556A (en) * 1962-10-01 1966-04-05 Xerox Corp Abrasion for thin film resistance control
JPS6489470A (en) * 1987-09-30 1989-04-03 Mitsubishi Electric Corp Manufacture of semiconductor device
EP0369053B1 (de) * 1988-11-17 1994-03-02 International Business Machines Corporation Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich
US5156986A (en) * 1990-10-05 1992-10-20 General Electric Company Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration
JP3173803B2 (ja) * 1990-12-10 2001-06-04 キヤノン株式会社 回折格子の作成方法
US5538753A (en) * 1991-10-14 1996-07-23 Landis & Gyr Betriebs Ag Security element
KR960003864B1 (ko) * 1992-01-06 1996-03-23 삼성전자주식회사 반도체 메모리장치 및 그 제조방법
US5268782A (en) * 1992-01-16 1993-12-07 Minnesota Mining And Manufacturing Company Micro-ridged, polymeric liquid crystal display substrate and display device
US5292625A (en) * 1992-04-03 1994-03-08 Minnesota Mining And Manufacturing Company Method for selectively exposing an uneven substrate surface
US5382317A (en) * 1994-02-18 1995-01-17 Minnesota Mining And Manufacturing Company Method of selectively applying a coating to a bilevel substrate
US5378494A (en) * 1994-02-18 1995-01-03 Minnesota Mining And Manufacturing Company Method of applying a thin coating on the lower surface of a bilevel substrate
US5686337A (en) * 1996-01-11 1997-11-11 Vanguard International Semiconductor Corporation Method for fabricating stacked capacitors in a DRAM cell

Also Published As

Publication number Publication date
KR20010033690A (ko) 2001-04-25
EP1044396A1 (en) 2000-10-18
WO1999034256A1 (en) 1999-07-08
KR100567635B1 (ko) 2006-04-05
US6077560A (en) 2000-06-20
EP1044396B1 (en) 2010-06-30
CA2315026A1 (en) 1999-07-08
JP2002500434A (ja) 2002-01-08

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