CA2315026A1 - Method for continuous and maskless patterning of structured substrates - Google Patents
Method for continuous and maskless patterning of structured substrates Download PDFInfo
- Publication number
- CA2315026A1 CA2315026A1 CA002315026A CA2315026A CA2315026A1 CA 2315026 A1 CA2315026 A1 CA 2315026A1 CA 002315026 A CA002315026 A CA 002315026A CA 2315026 A CA2315026 A CA 2315026A CA 2315026 A1 CA2315026 A1 CA 2315026A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- filler
- coating
- ribs
- protrusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000000059 patterning Methods 0.000 title claims abstract description 14
- 239000000945 filler Substances 0.000 claims abstract description 98
- 239000000463 material Substances 0.000 claims abstract description 91
- 238000000576 coating method Methods 0.000 claims abstract description 49
- 239000011248 coating agent Substances 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims description 18
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 239000000203 mixture Substances 0.000 description 8
- 238000001459 lithography Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- IUNVCWLKOOCPIT-UHFFFAOYSA-N 6-methylheptylsulfanyl 2-hydroxyacetate Chemical compound CC(C)CCCCCSOC(=O)CO IUNVCWLKOOCPIT-UHFFFAOYSA-N 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000004034 viscosity adjusting agent Substances 0.000 description 2
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- CEXQWAAGPPNOQF-UHFFFAOYSA-N 2-phenoxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOC1=CC=CC=C1 CEXQWAAGPPNOQF-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/999,287 | 1997-12-29 | ||
| US08/999,287 US6077560A (en) | 1997-12-29 | 1997-12-29 | Method for continuous and maskless patterning of structured substrates |
| PCT/US1998/008995 WO1999034256A1 (en) | 1997-12-29 | 1998-05-04 | Method for continuous and maskless patterning of structured substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2315026A1 true CA2315026A1 (en) | 1999-07-08 |
Family
ID=25546145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002315026A Abandoned CA2315026A1 (en) | 1997-12-29 | 1998-05-04 | Method for continuous and maskless patterning of structured substrates |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6077560A (enExample) |
| EP (1) | EP1044396B1 (enExample) |
| JP (1) | JP2002500434A (enExample) |
| KR (1) | KR100567635B1 (enExample) |
| CA (1) | CA2315026A1 (enExample) |
| DE (1) | DE69841752D1 (enExample) |
| WO (1) | WO1999034256A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6524675B1 (en) | 1999-05-13 | 2003-02-25 | 3M Innovative Properties Company | Adhesive-back articles |
| KR20010082831A (ko) * | 2000-02-21 | 2001-08-31 | 구본준, 론 위라하디락사 | 액정표시장치의 제조방법 |
| US20020197854A1 (en) * | 2001-05-16 | 2002-12-26 | Bard Allen J. | Selective deposition of materials for the fabrication of interconnects and contacts on semiconductor devices |
| US20040067341A1 (en) * | 2002-10-02 | 2004-04-08 | Shartle Robert Justice | Scratch-resistant metal films and metallized surfaces and methods of fabricating them |
| JP3801158B2 (ja) * | 2002-11-19 | 2006-07-26 | セイコーエプソン株式会社 | 多層配線基板の製造方法、多層配線基板、電子デバイス及び電子機器 |
| TW594423B (en) * | 2003-08-28 | 2004-06-21 | Ind Tech Res Inst | A color filter manufacturing method for a plastic substrate |
| US7012017B2 (en) * | 2004-01-29 | 2006-03-14 | 3M Innovative Properties Company | Partially etched dielectric film with conductive features |
| US7528075B2 (en) * | 2004-02-25 | 2009-05-05 | Hrl Laboratories, Llc | Self-masking defect removing method |
| EP1840657A1 (en) * | 2006-03-28 | 2007-10-03 | Carl Zeiss SMT AG | Support structure for temporarily supporting a substrate |
| US7543974B2 (en) * | 2007-03-06 | 2009-06-09 | Skc Haas Display Films Co., Ltd. | Light redirecting film having variable thickness |
| US7530726B2 (en) * | 2007-03-06 | 2009-05-12 | Skc Haas Display Films Co., Ltd. | Light redirecting film having discontinuous coating |
| EP2247998B1 (en) * | 2008-02-28 | 2019-04-10 | New York University | Method and apparatus for providing input to a processor, and a sensor pad |
| US8957484B2 (en) * | 2008-02-29 | 2015-02-17 | University Of Washington | Piezoelectric substrate, fabrication and related methods |
| CN102124825B (zh) * | 2008-06-30 | 2014-04-30 | 3M创新有限公司 | 形成图案化基材的方法 |
| JP2011526844A (ja) | 2008-06-30 | 2011-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | ミクロ構造を形成する方法 |
| CN103547702B (zh) | 2010-06-04 | 2016-08-10 | 阿德文泰克全球有限公司 | 利用编码孔径进行的阴影掩模的对准 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1983720A (en) * | 1934-01-26 | 1934-12-11 | Pittsburgh Plate Glass Co | Ornamental glass and method of making the same |
| US3287161A (en) * | 1962-10-01 | 1966-11-22 | Xerox Corp | Method for forming a thin film resistor |
| US3244556A (en) * | 1962-10-01 | 1966-04-05 | Xerox Corp | Abrasion for thin film resistance control |
| JPS6489470A (en) * | 1987-09-30 | 1989-04-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| EP0369053B1 (de) * | 1988-11-17 | 1994-03-02 | International Business Machines Corporation | Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich |
| US5156986A (en) * | 1990-10-05 | 1992-10-20 | General Electric Company | Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration |
| JP3173803B2 (ja) * | 1990-12-10 | 2001-06-04 | キヤノン株式会社 | 回折格子の作成方法 |
| US5538753A (en) * | 1991-10-14 | 1996-07-23 | Landis & Gyr Betriebs Ag | Security element |
| KR960003864B1 (ko) * | 1992-01-06 | 1996-03-23 | 삼성전자주식회사 | 반도체 메모리장치 및 그 제조방법 |
| US5268782A (en) * | 1992-01-16 | 1993-12-07 | Minnesota Mining And Manufacturing Company | Micro-ridged, polymeric liquid crystal display substrate and display device |
| US5292625A (en) * | 1992-04-03 | 1994-03-08 | Minnesota Mining And Manufacturing Company | Method for selectively exposing an uneven substrate surface |
| US5382317A (en) * | 1994-02-18 | 1995-01-17 | Minnesota Mining And Manufacturing Company | Method of selectively applying a coating to a bilevel substrate |
| US5378494A (en) * | 1994-02-18 | 1995-01-03 | Minnesota Mining And Manufacturing Company | Method of applying a thin coating on the lower surface of a bilevel substrate |
| US5686337A (en) * | 1996-01-11 | 1997-11-11 | Vanguard International Semiconductor Corporation | Method for fabricating stacked capacitors in a DRAM cell |
-
1997
- 1997-12-29 US US08/999,287 patent/US6077560A/en not_active Expired - Lifetime
-
1998
- 1998-05-04 WO PCT/US1998/008995 patent/WO1999034256A1/en not_active Ceased
- 1998-05-04 EP EP98920179A patent/EP1044396B1/en not_active Expired - Lifetime
- 1998-05-04 JP JP2000526846A patent/JP2002500434A/ja active Pending
- 1998-05-04 CA CA002315026A patent/CA2315026A1/en not_active Abandoned
- 1998-05-04 DE DE69841752T patent/DE69841752D1/de not_active Expired - Lifetime
- 1998-05-04 KR KR1020007007213A patent/KR100567635B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010033690A (ko) | 2001-04-25 |
| EP1044396A1 (en) | 2000-10-18 |
| WO1999034256A1 (en) | 1999-07-08 |
| KR100567635B1 (ko) | 2006-04-05 |
| US6077560A (en) | 2000-06-20 |
| DE69841752D1 (de) | 2010-08-12 |
| EP1044396B1 (en) | 2010-06-30 |
| JP2002500434A (ja) | 2002-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |