JP2002319744A5 - - Google Patents

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Publication number
JP2002319744A5
JP2002319744A5 JP2002031791A JP2002031791A JP2002319744A5 JP 2002319744 A5 JP2002319744 A5 JP 2002319744A5 JP 2002031791 A JP2002031791 A JP 2002031791A JP 2002031791 A JP2002031791 A JP 2002031791A JP 2002319744 A5 JP2002319744 A5 JP 2002319744A5
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JP
Japan
Prior art keywords
type cladding
conductivity type
cladding layer
layer
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002031791A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002319744A (ja
JP4251529B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002031791A priority Critical patent/JP4251529B2/ja
Priority claimed from JP2002031791A external-priority patent/JP4251529B2/ja
Priority to US10/076,850 priority patent/US6873635B2/en
Publication of JP2002319744A publication Critical patent/JP2002319744A/ja
Publication of JP2002319744A5 publication Critical patent/JP2002319744A5/ja
Application granted granted Critical
Publication of JP4251529B2 publication Critical patent/JP4251529B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2002031791A 2001-02-14 2002-02-08 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置 Expired - Lifetime JP4251529B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002031791A JP4251529B2 (ja) 2001-02-14 2002-02-08 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置
US10/076,850 US6873635B2 (en) 2001-02-14 2002-02-14 Nitride semiconductor laser device and optical information reproduction apparatus using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-37759 2001-02-14
JP2001037759 2001-02-14
JP2002031791A JP4251529B2 (ja) 2001-02-14 2002-02-08 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007322412A Division JP2008124485A (ja) 2001-02-14 2007-12-13 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置

Publications (3)

Publication Number Publication Date
JP2002319744A JP2002319744A (ja) 2002-10-31
JP2002319744A5 true JP2002319744A5 (enExample) 2005-04-28
JP4251529B2 JP4251529B2 (ja) 2009-04-08

Family

ID=26609418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002031791A Expired - Lifetime JP4251529B2 (ja) 2001-02-14 2002-02-08 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置

Country Status (2)

Country Link
US (1) US6873635B2 (enExample)
JP (1) JP4251529B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4615179B2 (ja) * 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
JP4601904B2 (ja) * 2003-01-30 2010-12-22 三菱電機株式会社 半導体レーザ装置
JP2004253776A (ja) * 2003-01-31 2004-09-09 Sharp Corp 半導体レーザ素子及び光学式情報記録装置
US20040196540A1 (en) * 2003-02-28 2004-10-07 Lealman Ian Francis Semiconductor optical amplifiers
JP4551121B2 (ja) * 2004-05-24 2010-09-22 シャープ株式会社 半導体レーザ装置
JP2006093682A (ja) * 2004-08-26 2006-04-06 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP2006229008A (ja) * 2005-02-18 2006-08-31 Opnext Japan Inc 半導体レーザ素子
KR20060109112A (ko) * 2005-04-15 2006-10-19 삼성전자주식회사 리지부를 구비하는 반도체 레이저 다이오드 및 그 제조방법
US20070002914A1 (en) * 2005-06-27 2007-01-04 Samsung Electronics Co., Ltd. Semiconductor laser diode having an asymmetric optical waveguide layer
JP2007081180A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2007095857A (ja) * 2005-09-28 2007-04-12 Rohm Co Ltd 半導体レーザ
JP2007110049A (ja) * 2005-10-17 2007-04-26 Rohm Co Ltd 半導体発光素子
JP4845790B2 (ja) * 2007-03-30 2011-12-28 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
DE102008021674A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102009019516A1 (de) * 2009-04-30 2010-11-04 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
JP2010161427A (ja) * 2010-04-26 2010-07-22 Sony Corp 半導体レーザ
EP2741381B1 (en) 2012-12-06 2020-05-06 Nichia Corporation Semiconductor laser element
JP7560540B2 (ja) * 2020-03-19 2024-10-02 パナソニックホールディングス株式会社 半導体レーザ素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3897186B2 (ja) 1997-03-27 2007-03-22 シャープ株式会社 化合物半導体レーザ
JP3957359B2 (ja) * 1997-05-21 2007-08-15 シャープ株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法

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