JP4251529B2 - 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置 - Google Patents

窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置 Download PDF

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JP4251529B2
JP4251529B2 JP2002031791A JP2002031791A JP4251529B2 JP 4251529 B2 JP4251529 B2 JP 4251529B2 JP 2002031791 A JP2002031791 A JP 2002031791A JP 2002031791 A JP2002031791 A JP 2002031791A JP 4251529 B2 JP4251529 B2 JP 4251529B2
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layer
type cladding
cladding layer
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refractive index
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Japanese (ja)
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JP2002319744A5 (enExample
JP2002319744A (ja
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幸生 山崎
茂稔 伊藤
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Sharp Corp
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Sharp Corp
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Priority to JP2002031791A priority Critical patent/JP4251529B2/ja
Priority to US10/076,850 priority patent/US6873635B2/en
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Publication of JP2002319744A5 publication Critical patent/JP2002319744A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers

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  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
JP2002031791A 2001-02-14 2002-02-08 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置 Expired - Lifetime JP4251529B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002031791A JP4251529B2 (ja) 2001-02-14 2002-02-08 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置
US10/076,850 US6873635B2 (en) 2001-02-14 2002-02-14 Nitride semiconductor laser device and optical information reproduction apparatus using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-37759 2001-02-14
JP2001037759 2001-02-14
JP2002031791A JP4251529B2 (ja) 2001-02-14 2002-02-08 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007322412A Division JP2008124485A (ja) 2001-02-14 2007-12-13 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置

Publications (3)

Publication Number Publication Date
JP2002319744A JP2002319744A (ja) 2002-10-31
JP2002319744A5 JP2002319744A5 (enExample) 2005-04-28
JP4251529B2 true JP4251529B2 (ja) 2009-04-08

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JP2002031791A Expired - Lifetime JP4251529B2 (ja) 2001-02-14 2002-02-08 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置

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Country Link
US (1) US6873635B2 (enExample)
JP (1) JP4251529B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4615179B2 (ja) * 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
JP4601904B2 (ja) * 2003-01-30 2010-12-22 三菱電機株式会社 半導体レーザ装置
JP2004253776A (ja) * 2003-01-31 2004-09-09 Sharp Corp 半導体レーザ素子及び光学式情報記録装置
US20040196540A1 (en) * 2003-02-28 2004-10-07 Lealman Ian Francis Semiconductor optical amplifiers
JP4551121B2 (ja) * 2004-05-24 2010-09-22 シャープ株式会社 半導体レーザ装置
JP2006093682A (ja) * 2004-08-26 2006-04-06 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP2006229008A (ja) * 2005-02-18 2006-08-31 Opnext Japan Inc 半導体レーザ素子
KR20060109112A (ko) * 2005-04-15 2006-10-19 삼성전자주식회사 리지부를 구비하는 반도체 레이저 다이오드 및 그 제조방법
US20070002914A1 (en) * 2005-06-27 2007-01-04 Samsung Electronics Co., Ltd. Semiconductor laser diode having an asymmetric optical waveguide layer
JP2007081180A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2007095857A (ja) * 2005-09-28 2007-04-12 Rohm Co Ltd 半導体レーザ
JP2007110049A (ja) * 2005-10-17 2007-04-26 Rohm Co Ltd 半導体発光素子
JP4845790B2 (ja) * 2007-03-30 2011-12-28 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
DE102008021674A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102009019516A1 (de) * 2009-04-30 2010-11-04 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
JP2010161427A (ja) * 2010-04-26 2010-07-22 Sony Corp 半導体レーザ
EP2741381B1 (en) 2012-12-06 2020-05-06 Nichia Corporation Semiconductor laser element
JP7560540B2 (ja) * 2020-03-19 2024-10-02 パナソニックホールディングス株式会社 半導体レーザ素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3897186B2 (ja) 1997-03-27 2007-03-22 シャープ株式会社 化合物半導体レーザ
JP3957359B2 (ja) * 1997-05-21 2007-08-15 シャープ株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法

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Publication number Publication date
US20020141469A1 (en) 2002-10-03
JP2002319744A (ja) 2002-10-31
US6873635B2 (en) 2005-03-29

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