JP2002314131A - 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子 - Google Patents
透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子Info
- Publication number
- JP2002314131A JP2002314131A JP2001111621A JP2001111621A JP2002314131A JP 2002314131 A JP2002314131 A JP 2002314131A JP 2001111621 A JP2001111621 A JP 2001111621A JP 2001111621 A JP2001111621 A JP 2001111621A JP 2002314131 A JP2002314131 A JP 2002314131A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- thin film
- nitride semiconductor
- type
- iii nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000010409 thin film Substances 0.000 claims abstract description 70
- 239000010931 gold Substances 0.000 claims abstract description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052737 gold Inorganic materials 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 21
- 230000001681 protective effect Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 121
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 229910002601 GaN Inorganic materials 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000013078 crystal Substances 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 239000010936 titanium Substances 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000005253 cladding Methods 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910000480 nickel oxide Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical class [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical group [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- MVHZYMGGUWWDCL-UHFFFAOYSA-N C[Al](C)C.[In] Chemical compound C[Al](C)C.[In] MVHZYMGGUWWDCL-UHFFFAOYSA-N 0.000 description 1
- 102100033040 Carbonic anhydrase 12 Human genes 0.000 description 1
- 101000867855 Homo sapiens Carbonic anhydrase 12 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001111621A JP2002314131A (ja) | 2001-04-10 | 2001-04-10 | 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001111621A JP2002314131A (ja) | 2001-04-10 | 2001-04-10 | 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002314131A true JP2002314131A (ja) | 2002-10-25 |
| JP2002314131A5 JP2002314131A5 (enrdf_load_stackoverflow) | 2005-01-20 |
Family
ID=18963191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001111621A Pending JP2002314131A (ja) | 2001-04-10 | 2001-04-10 | 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002314131A (enrdf_load_stackoverflow) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005011857A (ja) * | 2003-06-17 | 2005-01-13 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
| JP2005244148A (ja) * | 2004-02-27 | 2005-09-08 | Super Nova Optoelectronics Corp | 窒化ガリウム系発光ダイオード及びその製造方法 |
| JP2006100475A (ja) * | 2004-09-29 | 2006-04-13 | Toyoda Gosei Co Ltd | 半導体発光素子 |
| KR100703091B1 (ko) * | 2005-09-08 | 2007-04-06 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
| JP2007180326A (ja) * | 2005-12-28 | 2007-07-12 | Showa Denko Kk | 発光装置 |
| US7276706B2 (en) | 2004-05-12 | 2007-10-02 | Kabushiki Kaisha Toshiba | Radiation detector |
| JP2007258376A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体素子の製造方法 |
| JP2008205468A (ja) * | 2007-02-20 | 2008-09-04 | Cree Inc | 低屈折率キャリア基板上のｉｉｉ族窒化物ダイオード |
| CN100428504C (zh) * | 2003-11-06 | 2008-10-22 | 厦门市三安光电科技有限公司 | 一种半导体器件及其制备方法 |
| JP2008300421A (ja) * | 2007-05-29 | 2008-12-11 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ族窒化物半導体の製造方法およびｉｉｉ−ｖ族窒化物半導体 |
| JP2009117604A (ja) * | 2007-11-06 | 2009-05-28 | Sharp Corp | 窒化物半導体発光ダイオード素子 |
| JP2012510724A (ja) * | 2008-12-02 | 2012-05-10 | エピヴァレー カンパニー リミテッド | ３族窒化物半導体発光素子 |
-
2001
- 2001-04-10 JP JP2001111621A patent/JP2002314131A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005011857A (ja) * | 2003-06-17 | 2005-01-13 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
| CN100428504C (zh) * | 2003-11-06 | 2008-10-22 | 厦门市三安光电科技有限公司 | 一种半导体器件及其制备方法 |
| JP2005244148A (ja) * | 2004-02-27 | 2005-09-08 | Super Nova Optoelectronics Corp | 窒化ガリウム系発光ダイオード及びその製造方法 |
| US7276706B2 (en) | 2004-05-12 | 2007-10-02 | Kabushiki Kaisha Toshiba | Radiation detector |
| JP2006100475A (ja) * | 2004-09-29 | 2006-04-13 | Toyoda Gosei Co Ltd | 半導体発光素子 |
| KR100703091B1 (ko) * | 2005-09-08 | 2007-04-06 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
| JP2007180326A (ja) * | 2005-12-28 | 2007-07-12 | Showa Denko Kk | 発光装置 |
| JP2007258376A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体素子の製造方法 |
| JP2008205468A (ja) * | 2007-02-20 | 2008-09-04 | Cree Inc | 低屈折率キャリア基板上のｉｉｉ族窒化物ダイオード |
| JP2008300421A (ja) * | 2007-05-29 | 2008-12-11 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ族窒化物半導体の製造方法およびｉｉｉ−ｖ族窒化物半導体 |
| JP2009117604A (ja) * | 2007-11-06 | 2009-05-28 | Sharp Corp | 窒化物半導体発光ダイオード素子 |
| JP2012510724A (ja) * | 2008-12-02 | 2012-05-10 | エピヴァレー カンパニー リミテッド | ３族窒化物半導体発光素子 |
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