JP2002299282A5 - - Google Patents

Download PDF

Info

Publication number
JP2002299282A5
JP2002299282A5 JP2001095309A JP2001095309A JP2002299282A5 JP 2002299282 A5 JP2002299282 A5 JP 2002299282A5 JP 2001095309 A JP2001095309 A JP 2001095309A JP 2001095309 A JP2001095309 A JP 2001095309A JP 2002299282 A5 JP2002299282 A5 JP 2002299282A5
Authority
JP
Japan
Prior art keywords
film
forming
metal
silicide film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001095309A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002299282A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001095309A priority Critical patent/JP2002299282A/ja
Priority claimed from JP2001095309A external-priority patent/JP2002299282A/ja
Publication of JP2002299282A publication Critical patent/JP2002299282A/ja
Publication of JP2002299282A5 publication Critical patent/JP2002299282A5/ja
Withdrawn legal-status Critical Current

Links

JP2001095309A 2001-03-29 2001-03-29 半導体装置の製造方法 Withdrawn JP2002299282A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001095309A JP2002299282A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001095309A JP2002299282A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006197771A Division JP3971442B2 (ja) 2006-07-20 2006-07-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002299282A JP2002299282A (ja) 2002-10-11
JP2002299282A5 true JP2002299282A5 (enExample) 2005-08-11

Family

ID=18949378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001095309A Withdrawn JP2002299282A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2002299282A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4501379B2 (ja) * 2003-09-02 2010-07-14 Jsr株式会社 ルテニウム−シリコン混合膜を形成する方法
JP4521327B2 (ja) * 2005-07-19 2010-08-11 株式会社東芝 半導体装置の製造方法
JPWO2007026677A1 (ja) * 2005-09-01 2009-03-05 日本電気株式会社 半導体装置の製造方法
JP5157450B2 (ja) * 2005-11-28 2013-03-06 日本電気株式会社 半導体装置およびその製造方法
JP5547877B2 (ja) * 2008-05-23 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP2003258121A5 (enExample)
TWI318782B (en) Method for manufacturing a semiconductor device
JP2003204063A5 (enExample)
JP2008515188A5 (enExample)
JP2005086157A5 (enExample)
EP1361614A4 (en) SEMICONDUCTOR DEVICES PROCESS
JP2001298186A5 (enExample)
JP2006516174A5 (enExample)
EP1063686A3 (en) Method of silicide formation in a semiconductor device
WO2002065516A8 (en) Improved process for deposition of semiconductor films
EP1434272A4 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT
JP2001015612A5 (enExample)
CN101667541A (zh) 半导体装置的金属栅极堆叠的形成方法
JP2006352139A5 (enExample)
EP1102313A3 (en) A top gate self-aligned polysilicon TFT and a method for its production
JP2002299282A5 (enExample)
JP2006516176A5 (enExample)
US20050127410A1 (en) Method of making a MOS transistor
JP2006245167A5 (enExample)
KR970003545A (ko) 실리사이드화 단계를 포함하는 반도체 장치의 제조 방법
JP2001036078A5 (enExample)
JP2002110973A5 (enExample)
JP2007081361A5 (enExample)
WO2006055828A3 (en) Silicided source/drain electrode with polysilicon grains
KR960015810A (ko) 트랜지스터 제조방법