JP2002299282A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2002299282A
JP2002299282A JP2001095309A JP2001095309A JP2002299282A JP 2002299282 A JP2002299282 A JP 2002299282A JP 2001095309 A JP2001095309 A JP 2001095309A JP 2001095309 A JP2001095309 A JP 2001095309A JP 2002299282 A JP2002299282 A JP 2002299282A
Authority
JP
Japan
Prior art keywords
film
silicon
metal
silicide film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001095309A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002299282A5 (enExample
Inventor
Toshihiko Iinuma
俊彦 飯沼
Hisami Okuwada
久美 奥和田
Atsuko Kawasaki
敦子 川崎
Tsutomu Sato
力 佐藤
Kyoichi Suguro
恭一 須黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001095309A priority Critical patent/JP2002299282A/ja
Publication of JP2002299282A publication Critical patent/JP2002299282A/ja
Publication of JP2002299282A5 publication Critical patent/JP2002299282A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2001095309A 2001-03-29 2001-03-29 半導体装置の製造方法 Withdrawn JP2002299282A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001095309A JP2002299282A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001095309A JP2002299282A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006197771A Division JP3971442B2 (ja) 2006-07-20 2006-07-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002299282A true JP2002299282A (ja) 2002-10-11
JP2002299282A5 JP2002299282A5 (enExample) 2005-08-11

Family

ID=18949378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001095309A Withdrawn JP2002299282A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2002299282A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079468A (ja) * 2003-09-02 2005-03-24 Jsr Corp ルテニウム−シリコン混合膜を形成する方法
JP2007027500A (ja) * 2005-07-19 2007-02-01 Toshiba Corp 半導体装置およびその製造方法
WO2007026677A1 (ja) * 2005-09-01 2007-03-08 Nec Corporation 半導体装置の製造方法
WO2007060797A1 (ja) * 2005-11-28 2007-05-31 Nec Corporation 半導体装置およびその製造方法
JP2009283780A (ja) * 2008-05-23 2009-12-03 Nec Electronics Corp 半導体装置およびその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079468A (ja) * 2003-09-02 2005-03-24 Jsr Corp ルテニウム−シリコン混合膜を形成する方法
JP2007027500A (ja) * 2005-07-19 2007-02-01 Toshiba Corp 半導体装置およびその製造方法
US7629243B2 (en) 2005-07-19 2009-12-08 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
WO2007026677A1 (ja) * 2005-09-01 2007-03-08 Nec Corporation 半導体装置の製造方法
US7723176B2 (en) 2005-09-01 2010-05-25 Nec Corporation Method for manufacturing semiconductor device
WO2007060797A1 (ja) * 2005-11-28 2007-05-31 Nec Corporation 半導体装置およびその製造方法
JP5157450B2 (ja) * 2005-11-28 2013-03-06 日本電気株式会社 半導体装置およびその製造方法
JP2009283780A (ja) * 2008-05-23 2009-12-03 Nec Electronics Corp 半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
US6774000B2 (en) Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures
TW569451B (en) Process for fabricating a vertical bipolar junction transistor, process for fabricating an integrated circuit structure, and integrated circuit structure
JP2586345B2 (ja) コバルトシリサイド膜より成る半導体装置及び該装置の製造方法
US7229871B2 (en) Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors
CN100401477C (zh) 形成场效应晶体管的金属硅化栅极的方法
CN100461463C (zh) 半导体结构和形成金属氧化物半导体结构的方法
JPH11204791A (ja) 半導体装置及びその製造方法
JPH0367334B2 (enExample)
TW200423400A (en) Schottky barrier transistor and method of manufacturing the same
JPH10223889A (ja) Ｍｉｓトランジスタおよびその製造方法
US20060166457A1 (en) Method of making transistors and non-silicided polysilicon resistors for mixed signal circuits
JP2000022139A (ja) 半導体装置及びその製造方法
TWI306622B (en) Method of forming silicided gate structure field of the invention
US6765269B2 (en) Conformal surface silicide strap on spacer and method of making same
JP3061891B2 (ja) 半導体装置の製造方法
US20080020568A1 (en) Semiconductor device having a silicide layer and method of fabricating the same
JP3629326B2 (ja) 半導体装置の製造方法
JP3492973B2 (ja) 半導体装置の製造方法
JP2002299282A (ja) 半導体装置の製造方法
JP3971442B2 (ja) 半導体装置の製造方法
JP2009117621A (ja) 半導体装置及びその製造方法
TW586152B (en) Semiconductor device and manufacturing method thereof
US6764912B1 (en) Passivation of nitride spacer
JP2940492B2 (ja) 半導体装置およびその製造方法
JP2003218060A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050118

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060207

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060407

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060530

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20060726