JP2002260389A - 連想メモリ - Google Patents

連想メモリ

Info

Publication number
JP2002260389A
JP2002260389A JP2001056392A JP2001056392A JP2002260389A JP 2002260389 A JP2002260389 A JP 2002260389A JP 2001056392 A JP2001056392 A JP 2001056392A JP 2001056392 A JP2001056392 A JP 2001056392A JP 2002260389 A JP2002260389 A JP 2002260389A
Authority
JP
Japan
Prior art keywords
cam
word
address
cam word
defective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001056392A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002260389A5 (enExample
Inventor
Naoki Kanazawa
直樹 金沢
Ryuichi Hata
竜一 籏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kawasaki Microelectronics Inc
Original Assignee
Kawasaki Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Microelectronics Inc filed Critical Kawasaki Microelectronics Inc
Priority to JP2001056392A priority Critical patent/JP2002260389A/ja
Priority to US10/082,229 priority patent/US6611445B2/en
Publication of JP2002260389A publication Critical patent/JP2002260389A/ja
Publication of JP2002260389A5 publication Critical patent/JP2002260389A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2001056392A 2001-03-01 2001-03-01 連想メモリ Pending JP2002260389A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001056392A JP2002260389A (ja) 2001-03-01 2001-03-01 連想メモリ
US10/082,229 US6611445B2 (en) 2001-03-01 2002-02-26 Content addressable memory having redundant circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001056392A JP2002260389A (ja) 2001-03-01 2001-03-01 連想メモリ

Publications (2)

Publication Number Publication Date
JP2002260389A true JP2002260389A (ja) 2002-09-13
JP2002260389A5 JP2002260389A5 (enExample) 2008-04-03

Family

ID=18916425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001056392A Pending JP2002260389A (ja) 2001-03-01 2001-03-01 連想メモリ

Country Status (2)

Country Link
US (1) US6611445B2 (enExample)
JP (1) JP2002260389A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288347A (ja) * 2003-03-03 2004-10-14 Renesas Technology Corp 連想メモリ
US7002822B2 (en) 2003-04-25 2006-02-21 Samsung Electronics Co., Ltd. Content addressable memory device
JP2006309917A (ja) * 2005-03-31 2006-11-09 Renesas Technology Corp Ｃａｍ装置及びｃａｍ装置の救済方法
KR100725096B1 (ko) * 2005-05-10 2007-06-04 삼성전자주식회사 캠 장치 및 그의 리페어 방법
JP2008257835A (ja) * 2007-03-13 2008-10-23 Renesas Technology Corp 半導体装置
JP4588114B1 (ja) * 2010-02-18 2010-11-24 克己 井上 情報絞り込み検出機能を備えたメモリ、その使用方法、このメモリを含む装置。
WO2011102432A1 (ja) * 2010-02-18 2011-08-25 Inoue Katsumi 情報絞り込み検出機能を備えたメモリ、このメモリを用いた情報検出方法、このメモリを含む装置、情報の検出方法、メモリの使用方法、およびメモリアドレス比較回路
JP2013191255A (ja) * 2012-03-14 2013-09-26 Renesas Electronics Corp 内容参照メモリシステム

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002197873A (ja) * 2000-12-27 2002-07-12 Kawasaki Microelectronics Kk 連想メモリ
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
JP4004847B2 (ja) * 2002-05-08 2007-11-07 川崎マイクロエレクトロニクス株式会社 連想メモリ装置
US6888731B2 (en) 2002-11-29 2005-05-03 Mosaid Technologies Incorporated Method and apparatus for replacing defective rows in a semiconductor memory array
JP2004265528A (ja) * 2003-03-03 2004-09-24 Kawasaki Microelectronics Kk 連想メモリ
US7065694B2 (en) * 2003-09-25 2006-06-20 International Business Machines Corporation Adaptive runtime repairable entry register file
DE102004059206B4 (de) * 2004-12-09 2016-03-31 Polaris Innovations Ltd. Speicherbauelement und Adressierung von Speicherzellen
US7996710B2 (en) * 2007-04-25 2011-08-09 Hewlett-Packard Development Company, L.P. Defect management for a semiconductor memory system
US20150154317A1 (en) * 2012-03-28 2015-06-04 Katsumi Inoue Memory provided with set operation function, and method for processing set operation processing using same
JP2015225675A (ja) * 2014-05-26 2015-12-14 ルネサスエレクトロニクス株式会社 連想メモリおよび半導体装置
JP2019114311A (ja) * 2017-12-22 2019-07-11 ルネサスエレクトロニクス株式会社 検索メモリおよび検索システム
US20250383947A1 (en) * 2024-06-17 2025-12-18 Advanced Micro Devices, Inc. Per row activation counting error handling

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09180498A (ja) * 1995-12-25 1997-07-11 Mitsubishi Electric Corp 連想メモリ回路のテスト方法及び連想メモリ回路のテスト回路並びに冗長機能付き連想メモリ回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6275406B1 (en) * 1999-09-10 2001-08-14 Sibercore Technologies, Inc. Content address memory circuit with redundant array and method for implementing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09180498A (ja) * 1995-12-25 1997-07-11 Mitsubishi Electric Corp 連想メモリ回路のテスト方法及び連想メモリ回路のテスト回路並びに冗長機能付き連想メモリ回路

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288347A (ja) * 2003-03-03 2004-10-14 Renesas Technology Corp 連想メモリ
US7002822B2 (en) 2003-04-25 2006-02-21 Samsung Electronics Co., Ltd. Content addressable memory device
US7469369B2 (en) 2005-03-31 2008-12-23 Renesas Technology Corp. Low power content-addressable-memory device
JP2006309917A (ja) * 2005-03-31 2006-11-09 Renesas Technology Corp Ｃａｍ装置及びｃａｍ装置の救済方法
US7661042B2 (en) 2005-03-31 2010-02-09 Renesas Technology Corp. Low-power content-addressable-memory device
KR100725096B1 (ko) * 2005-05-10 2007-06-04 삼성전자주식회사 캠 장치 및 그의 리페어 방법
JP2008257835A (ja) * 2007-03-13 2008-10-23 Renesas Technology Corp 半導体装置
JP4588114B1 (ja) * 2010-02-18 2010-11-24 克己 井上 情報絞り込み検出機能を備えたメモリ、その使用方法、このメモリを含む装置。
WO2011102432A1 (ja) * 2010-02-18 2011-08-25 Inoue Katsumi 情報絞り込み検出機能を備えたメモリ、このメモリを用いた情報検出方法、このメモリを含む装置、情報の検出方法、メモリの使用方法、およびメモリアドレス比較回路
WO2011102043A1 (ja) * 2010-02-18 2011-08-25 Inoue Katsumi 情報絞り込み検出機能を備えたメモリ、その使用方法、このメモリを含む装置
JP2012252368A (ja) * 2010-02-18 2012-12-20 Katsumi Inoue 情報絞り込み検出機能を備えたメモリ、その使用方法、このメモリを含む装置。
US9275734B2 (en) 2010-02-18 2016-03-01 Katsumi Inoue Memory having information refinement detection function by applying a logic operation in parallel for each memory address to the match/mismatch results of data items and memory addresses, information detection method using memory, and memory address comparison circuit for the memory
JP2013191255A (ja) * 2012-03-14 2013-09-26 Renesas Electronics Corp 内容参照メモリシステム

Also Published As

Publication number Publication date
US20020122337A1 (en) 2002-09-05
US6611445B2 (en) 2003-08-26

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