JP2002231725A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法Info
- Publication number
- JP2002231725A JP2002231725A JP2001022490A JP2001022490A JP2002231725A JP 2002231725 A JP2002231725 A JP 2002231725A JP 2001022490 A JP2001022490 A JP 2001022490A JP 2001022490 A JP2001022490 A JP 2001022490A JP 2002231725 A JP2002231725 A JP 2002231725A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- rare gas
- isolation region
- soi
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 239000007789 gas Substances 0.000 claims abstract description 60
- 238000010438 heat treatment Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052786 argon Inorganic materials 0.000 claims abstract description 8
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052743 krypton Inorganic materials 0.000 claims abstract description 7
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052754 neon Inorganic materials 0.000 claims abstract description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000002955 isolation Methods 0.000 claims description 46
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000005247 gettering Methods 0.000 abstract description 32
- 239000012535 impurity Substances 0.000 abstract description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 83
- 239000010410 layer Substances 0.000 description 43
- 239000004973 liquid crystal related substance Substances 0.000 description 21
- 239000013078 crystal Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000005468 ion implantation Methods 0.000 description 11
- 230000010287 polarization Effects 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001022490A JP2002231725A (ja) | 2001-01-30 | 2001-01-30 | 半導体装置及びその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001022490A JP2002231725A (ja) | 2001-01-30 | 2001-01-30 | 半導体装置及びその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011252561A Division JP2012080110A (ja) | 2011-11-18 | 2011-11-18 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002231725A true JP2002231725A (ja) | 2002-08-16 |
| JP2002231725A5 JP2002231725A5 (enExample) | 2008-02-14 |
Family
ID=18887900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001022490A Pending JP2002231725A (ja) | 2001-01-30 | 2001-01-30 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002231725A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005129559A (ja) * | 2003-10-21 | 2005-05-19 | Oki Electric Ind Co Ltd | 半導体ウェーハの不純物除去方法及び半導体装置 |
| CN1323428C (zh) * | 2004-03-03 | 2007-06-27 | 中国科学院半导体研究所 | 制造半导体双极器件的方法 |
| JPWO2006117900A1 (ja) * | 2005-04-26 | 2008-12-18 | シャープ株式会社 | 半導体装置の製造方法及び半導体装置 |
| US20100016520A1 (en) * | 2006-12-19 | 2010-01-21 | Mitsubishi Chemical Corporation | Radiation-curable composition for optical recording medium, and optical recording medium |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08116038A (ja) * | 1994-10-13 | 1996-05-07 | Nec Corp | 半導体装置及びその製造方法 |
| JPH1032209A (ja) * | 1996-07-17 | 1998-02-03 | Hitachi Ltd | Ｓｏｉウエハおよびその製造方法ならびにそのｓｏｉウエハを用いた半導体集積回路装置 |
| JPH10135226A (ja) * | 1996-10-31 | 1998-05-22 | Motorola Inc | 横方向ゲッタリングを用いた半導体素子の製造方法 |
| JPH10189609A (ja) * | 1996-12-26 | 1998-07-21 | Sumitomo Metal Ind Ltd | 半導体装置及びその製造方法 |
| JPH10214844A (ja) * | 1997-01-31 | 1998-08-11 | Sharp Corp | 半導体基板の製造方法 |
| JP2000114265A (ja) * | 1998-10-01 | 2000-04-21 | Nec Corp | 半導体装置の製造方法 |
-
2001
- 2001-01-30 JP JP2001022490A patent/JP2002231725A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08116038A (ja) * | 1994-10-13 | 1996-05-07 | Nec Corp | 半導体装置及びその製造方法 |
| JPH1032209A (ja) * | 1996-07-17 | 1998-02-03 | Hitachi Ltd | Ｓｏｉウエハおよびその製造方法ならびにそのｓｏｉウエハを用いた半導体集積回路装置 |
| JPH10135226A (ja) * | 1996-10-31 | 1998-05-22 | Motorola Inc | 横方向ゲッタリングを用いた半導体素子の製造方法 |
| JPH10189609A (ja) * | 1996-12-26 | 1998-07-21 | Sumitomo Metal Ind Ltd | 半導体装置及びその製造方法 |
| JPH10214844A (ja) * | 1997-01-31 | 1998-08-11 | Sharp Corp | 半導体基板の製造方法 |
| JP2000114265A (ja) * | 1998-10-01 | 2000-04-21 | Nec Corp | 半導体装置の製造方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005129559A (ja) * | 2003-10-21 | 2005-05-19 | Oki Electric Ind Co Ltd | 半導体ウェーハの不純物除去方法及び半導体装置 |
| CN1323428C (zh) * | 2004-03-03 | 2007-06-27 | 中国科学院半导体研究所 | 制造半导体双极器件的方法 |
| JPWO2006117900A1 (ja) * | 2005-04-26 | 2008-12-18 | シャープ株式会社 | 半導体装置の製造方法及び半導体装置 |
| US20100016520A1 (en) * | 2006-12-19 | 2010-01-21 | Mitsubishi Chemical Corporation | Radiation-curable composition for optical recording medium, and optical recording medium |
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