JP2002164181A - 表示装置及びその作製方法 - Google Patents
表示装置及びその作製方法Info
- Publication number
- JP2002164181A JP2002164181A JP2001284174A JP2001284174A JP2002164181A JP 2002164181 A JP2002164181 A JP 2002164181A JP 2001284174 A JP2001284174 A JP 2001284174A JP 2001284174 A JP2001284174 A JP 2001284174A JP 2002164181 A JP2002164181 A JP 2002164181A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- bump
- display device
- end portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 20
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- 238000000034 method Methods 0.000 claims description 41
- 229920001721 polyimide Polymers 0.000 claims description 39
- 239000009719 polyimide resin Substances 0.000 claims description 34
- 239000011368 organic material Substances 0.000 claims description 9
- 229920005575 poly(amic acid) Polymers 0.000 claims description 6
- 239000004925 Acrylic resin Substances 0.000 claims description 5
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 239000010409 thin film Substances 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- -1 Polyphenylene vinylene Polymers 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
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- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 244000228957 Ferula foetida Species 0.000 description 1
- 229910010199 LiAl Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001284174A JP2002164181A (ja) | 2000-09-18 | 2001-09-18 | 表示装置及びその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000282312 | 2000-09-18 | ||
| JP2000-282312 | 2000-09-18 | ||
| JP2001284174A JP2002164181A (ja) | 2000-09-18 | 2001-09-18 | 表示装置及びその作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006003551A Division JP5041703B2 (ja) | 2000-09-18 | 2006-01-11 | 発光装置及びその作製方法 |
| JP2006230051A Division JP4646874B2 (ja) | 2000-09-18 | 2006-08-28 | 表示装置、携帯電話、デジタルカメラ及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002164181A true JP2002164181A (ja) | 2002-06-07 |
| JP2002164181A5 JP2002164181A5 (enrdf_load_stackoverflow) | 2006-02-23 |
Family
ID=26600145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001284174A Withdrawn JP2002164181A (ja) | 2000-09-18 | 2001-09-18 | 表示装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002164181A (enrdf_load_stackoverflow) |
Cited By (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004047383A (ja) * | 2002-07-15 | 2004-02-12 | Rohm Co Ltd | 有機エレクトロルミネセンスディスプレイ素子及びその製造方法 |
| JP2004063085A (ja) * | 2002-07-24 | 2004-02-26 | Nec Corp | アクティブマトリクス有機ｅｌ表示装置及びその製造方法 |
| JP2004063359A (ja) * | 2002-07-31 | 2004-02-26 | Dainippon Printing Co Ltd | エレクトロルミネッセンス表示装置および製造方法 |
| JP2004071558A (ja) * | 2002-07-25 | 2004-03-04 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法 |
| JP2004095551A (ja) * | 2002-08-09 | 2004-03-25 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| JP2004127627A (ja) * | 2002-09-30 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2004127933A (ja) * | 2002-09-11 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| JP2004134397A (ja) * | 2002-09-20 | 2004-04-30 | Semiconductor Energy Lab Co Ltd | 発光装置及び発光装置の作製方法 |
| JP2004146244A (ja) * | 2002-10-25 | 2004-05-20 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP2004227853A (ja) * | 2003-01-21 | 2004-08-12 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
| JP2004241160A (ja) * | 2003-02-03 | 2004-08-26 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス装置 |
| JP2005100943A (ja) * | 2003-09-04 | 2005-04-14 | Seiko Epson Corp | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
| JP2005158708A (ja) * | 2003-11-25 | 2005-06-16 | Samsung Sdi Co Ltd | 有機電界発光表示装置 |
| JP2005158672A (ja) * | 2003-11-26 | 2005-06-16 | Samsung Sdi Co Ltd | 平板表示装置 |
| JP2005208603A (ja) * | 2003-12-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2005251721A (ja) * | 2003-09-24 | 2005-09-15 | Seiko Epson Corp | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
| JP2005530319A (ja) * | 2002-06-14 | 2005-10-06 | サムスン エレクトロニクス カンパニー リミテッド | 有機電界発光装置 |
| JP2005310799A (ja) * | 2002-10-03 | 2005-11-04 | Seiko Epson Corp | 表示パネル及びその表示パネルを備えた電子機器並びに表示パネルの製造方法 |
| JP2005338812A (ja) * | 2004-04-28 | 2005-12-08 | Semiconductor Energy Lab Co Ltd | 表示装置、電子機器 |
| JP2006065320A (ja) * | 2004-07-30 | 2006-03-09 | Semiconductor Energy Lab Co Ltd | 表示装置、及びそれらの作製方法 |
| JP2006072296A (ja) * | 2004-09-02 | 2006-03-16 | Samsung Sdi Co Ltd | 回路測定用パッドを含む有機エレクトロルミネッセンス表示装置とその製造方法 |
| JP2006093078A (ja) * | 2004-09-21 | 2006-04-06 | Samsung Sdi Co Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JPWO2004068911A1 (ja) * | 2003-01-29 | 2006-05-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| KR100611159B1 (ko) | 2003-11-29 | 2006-08-09 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 |
| JP2007061690A (ja) * | 2005-08-29 | 2007-03-15 | Ulvac Japan Ltd | インクの塗布方法 |
| US7215305B2 (en) | 2002-10-17 | 2007-05-08 | Dai Nippon Printing Co., Ltd. | Electroluminescent element and display |
| US7307381B2 (en) | 2002-07-31 | 2007-12-11 | Dai Nippon Printing Co., Ltd. | Electroluminescent display and process for producing the same |
| JP2008016444A (ja) * | 2006-06-09 | 2008-01-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2008091223A (ja) * | 2006-10-03 | 2008-04-17 | Sony Corp | 表示装置 |
| JP2009105068A (ja) * | 2009-02-09 | 2009-05-14 | Seiko Epson Corp | 電気光学装置、電気光学装置の製造方法及び電子機器 |
| JP2011142332A (ja) * | 2002-10-30 | 2011-07-21 | Semiconductor Energy Lab Co Ltd | 発光装置及び電子機器 |
| JP2012015129A (ja) * | 2002-09-11 | 2012-01-19 | Semiconductor Energy Lab Co Ltd | 発光装置、表示装置および照明装置 |
| US8217396B2 (en) | 2004-07-30 | 2012-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region |
| JP2012138382A (ja) * | 2005-10-17 | 2012-07-19 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8253179B2 (en) | 2005-05-13 | 2012-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US8313355B2 (en) | 2006-06-09 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8362487B2 (en) | 2002-06-11 | 2013-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising film having hygroscopic property and transparency |
| JP2013030476A (ja) * | 2011-06-24 | 2013-02-07 | Semiconductor Energy Lab Co Ltd | 発光パネル、発光パネルを用いた発光装置および発光パネルの作製方法 |
| WO2013190661A1 (ja) * | 2012-06-20 | 2013-12-27 | パイオニア株式会社 | 有機エレクトロルミネッセンスデバイス |
| US8624257B2 (en) | 2003-12-26 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2014013404A (ja) * | 2004-09-16 | 2014-01-23 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
| CN103840085A (zh) * | 2012-11-20 | 2014-06-04 | 密西根大学董事会 | 有机光电子装置和其制备方法 |
| JP2014123528A (ja) * | 2012-12-21 | 2014-07-03 | Semiconductor Energy Lab Co Ltd | 発光装置及びその製造方法 |
| US8786178B2 (en) | 2004-09-29 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| WO2014155691A1 (ja) * | 2013-03-29 | 2014-10-02 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
| JP2016006768A (ja) * | 2014-05-30 | 2016-01-14 | 株式会社半導体エネルギー研究所 | 発光装置、表示装置及び電子機器 |
| WO2017149734A1 (ja) * | 2016-03-03 | 2017-09-08 | パイオニア株式会社 | 発光装置及び発光システム |
| JP2018014335A (ja) * | 2004-03-16 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US9929220B2 (en) | 2009-01-08 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| CN110111695A (zh) * | 2015-01-06 | 2019-08-09 | 三星显示有限公司 | 可伸展显示器及其制造方法 |
| JP2020004737A (ja) * | 2019-10-09 | 2020-01-09 | パイオニア株式会社 | 発光装置 |
| JP2022089889A (ja) * | 2013-07-12 | 2022-06-16 | 株式会社半導体エネルギー研究所 | 発光表示装置 |
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| JPS6299783A (ja) * | 1985-10-23 | 1987-05-09 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | エレクトロルミネセントデイスプレイ |
| JPH03250583A (ja) * | 1990-02-28 | 1991-11-08 | Idemitsu Kosan Co Ltd | エレクトロルミネッセンス素子及びその製造方法 |
| JP2001015267A (ja) * | 1999-01-26 | 2001-01-19 | Mitsubishi Chemicals Corp | 有機電界発光素子及びその製造方法 |
| JP2001351787A (ja) * | 2000-06-07 | 2001-12-21 | Sharp Corp | 有機ｌｅｄ素子とその製造方法および有機ｌｅｄディスプレイ |
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2001
- 2001-09-18 JP JP2001284174A patent/JP2002164181A/ja not_active Withdrawn
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| JPS6299783A (ja) * | 1985-10-23 | 1987-05-09 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | エレクトロルミネセントデイスプレイ |
| JPH03250583A (ja) * | 1990-02-28 | 1991-11-08 | Idemitsu Kosan Co Ltd | エレクトロルミネッセンス素子及びその製造方法 |
| JP2001015267A (ja) * | 1999-01-26 | 2001-01-19 | Mitsubishi Chemicals Corp | 有機電界発光素子及びその製造方法 |
| JP2001351787A (ja) * | 2000-06-07 | 2001-12-21 | Sharp Corp | 有機ｌｅｄ素子とその製造方法および有機ｌｅｄディスプレイ |
Cited By (126)
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