JP2002110827A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002110827A5 JP2002110827A5 JP2000301380A JP2000301380A JP2002110827A5 JP 2002110827 A5 JP2002110827 A5 JP 2002110827A5 JP 2000301380 A JP2000301380 A JP 2000301380A JP 2000301380 A JP2000301380 A JP 2000301380A JP 2002110827 A5 JP2002110827 A5 JP 2002110827A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- region
- semiconductor substrate
- element isolation
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims 29
- 238000000926 separation method Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000301380A JP4064611B2 (ja) | 2000-09-29 | 2000-09-29 | 半導体装置 |
| US09/916,595 US6590255B2 (en) | 2000-09-29 | 2001-07-30 | Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same |
| US10/455,427 US6995425B2 (en) | 2000-09-29 | 2003-06-06 | Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same |
| US11/283,742 US7442985B2 (en) | 2000-09-29 | 2005-11-22 | Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000301380A JP4064611B2 (ja) | 2000-09-29 | 2000-09-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002110827A JP2002110827A (ja) | 2002-04-12 |
| JP2002110827A5 true JP2002110827A5 (https=) | 2005-06-09 |
| JP4064611B2 JP4064611B2 (ja) | 2008-03-19 |
Family
ID=18782925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000301380A Expired - Fee Related JP4064611B2 (ja) | 2000-09-29 | 2000-09-29 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4064611B2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100520681B1 (ko) * | 2002-12-23 | 2005-10-11 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 플로팅 게이트 형성방법 |
| KR100557548B1 (ko) * | 2003-03-11 | 2006-03-03 | 주식회사 하이닉스반도체 | 반도체소자의 형성방법 |
| KR100541554B1 (ko) * | 2003-12-09 | 2006-01-12 | 삼성전자주식회사 | 플래쉬 메모리 소자의 제조방법 및 그에 의해 제조된플래쉬 메모리 소자 |
| JP4761745B2 (ja) * | 2004-09-21 | 2011-08-31 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4129009B2 (ja) | 2005-05-31 | 2008-07-30 | 株式会社東芝 | 半導体集積回路装置 |
| KR100632645B1 (ko) * | 2005-08-03 | 2006-10-11 | 주식회사 하이닉스반도체 | 바저항 측정패턴을 갖는 플래쉬 메모리 소자 및 그의형성방법 |
| KR100672160B1 (ko) * | 2005-12-28 | 2007-01-19 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 레지스터 형성방법 |
| JP2008103682A (ja) * | 2006-09-20 | 2008-05-01 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2010177694A (ja) * | 2010-04-07 | 2010-08-12 | Renesas Electronics Corp | 半導体装置 |
-
2000
- 2000-09-29 JP JP2000301380A patent/JP4064611B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7358142B2 (en) | Method for forming a FinFET by a damascene process | |
| CN100565882C (zh) | 半导体器件制造方法 | |
| KR100399350B1 (ko) | 부유 트랩형 소자를 가지는 비휘발성 반도체 메모리 장치및 그 제조방법 | |
| US7109566B2 (en) | Semiconductor device with resistor pattern and method of fabricating the same | |
| JP2001168306A5 (https=) | ||
| JP2000307084A5 (https=) | ||
| CN108172620A (zh) | 半导体器件结构及其制造方法 | |
| JP2000196038A5 (https=) | ||
| JP2002141469A5 (https=) | ||
| KR980006267A (ko) | 불휘발성 메모리 장치 및 그 제조방법 | |
| CN101026129B (zh) | 非易失性存储器件及其制造方法 | |
| JP2007157893A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
| TWI582841B (zh) | 製造電晶體閘極之方法及包含電晶體閘極之半導體裝置 | |
| JP2002110827A5 (https=) | ||
| KR100859081B1 (ko) | 반도체 디바이스 제조 방법 | |
| JP2008205379A (ja) | 不揮発性半導体メモリ及びその製造方法 | |
| JPH11233652A (ja) | 半導体装置およびその製造方法 | |
| JP7431286B2 (ja) | 電気的に消去可能なプログラム化読み出し専用メモリセル（ｅｅｐｒｏｍ）セルおよびその形成方法 | |
| JP4064611B2 (ja) | 半導体装置 | |
| JP2001168285A (ja) | 半導体装置およびその製造方法 | |
| CN100517656C (zh) | 制造非易失性存储器件的方法 | |
| JP2000269466A5 (https=) | ||
| KR100538075B1 (ko) | 플래시 메모리 소자의 제조 방법 | |
| JP3255234B2 (ja) | 二重プロセスを用いた集積回路の内部接合 | |
| JP2004088105A (ja) | スタッド形態のキャッピング層を具備した半導体装置のビットライン及びその形成方法 |