JP2002093176A5 - - Google Patents
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- JP2002093176A5 JP2002093176A5 JP2001148893A JP2001148893A JP2002093176A5 JP 2002093176 A5 JP2002093176 A5 JP 2002093176A5 JP 2001148893 A JP2001148893 A JP 2001148893A JP 2001148893 A JP2001148893 A JP 2001148893A JP 2002093176 A5 JP2002093176 A5 JP 2002093176A5
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- JP
- Japan
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001148893A JP4748877B2 (ja) | 2000-07-10 | 2001-05-18 | 記憶装置 |
TW90116721A TW523742B (en) | 2000-07-10 | 2001-07-09 | Memory device |
DE2001133281 DE10133281A1 (de) | 2000-07-10 | 2001-07-09 | Speichervorrichtung |
KR10-2001-0040791A KR100452902B1 (ko) | 2000-07-10 | 2001-07-09 | 기억 장치 |
CNB011224827A CN1162914C (zh) | 2000-07-10 | 2001-07-10 | 多端口静态随机存取存储器 |
US09/900,969 US6538954B2 (en) | 2000-07-10 | 2001-07-10 | Multi-port static random access memory equipped with a write control line |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000207848 | 2000-07-10 | ||
JP2000-207848 | 2000-07-10 | ||
JP2000207848 | 2000-07-10 | ||
JP2001148893A JP4748877B2 (ja) | 2000-07-10 | 2001-05-18 | 記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011096158A Division JP2011165313A (ja) | 2000-07-10 | 2011-04-22 | 記憶装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002093176A JP2002093176A (ja) | 2002-03-29 |
JP2002093176A5 true JP2002093176A5 (enrdf_load_stackoverflow) | 2008-05-29 |
JP4748877B2 JP4748877B2 (ja) | 2011-08-17 |
Family
ID=26595666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001148893A Expired - Lifetime JP4748877B2 (ja) | 2000-07-10 | 2001-05-18 | 記憶装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4748877B2 (enrdf_load_stackoverflow) |
CN (1) | CN1162914C (enrdf_load_stackoverflow) |
DE (1) | DE10133281A1 (enrdf_load_stackoverflow) |
TW (1) | TW523742B (enrdf_load_stackoverflow) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004041331B4 (de) * | 2004-08-26 | 2007-05-10 | Infineon Technologies Ag | Codesender, insbesondere zur Verwendung in einem Speichercontroller |
JP2006236443A (ja) * | 2005-02-23 | 2006-09-07 | Seiko Epson Corp | 強誘電体メモリ装置 |
JP2007172813A (ja) * | 2005-11-25 | 2007-07-05 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置及び半導体記憶装置の動作方法 |
JP4877094B2 (ja) * | 2007-06-22 | 2012-02-15 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置、半導体メモリ装置及び半導体メモリセル |
JP5282430B2 (ja) * | 2008-03-27 | 2013-09-04 | 富士通株式会社 | 半導体記憶装置 |
KR100953055B1 (ko) * | 2008-05-20 | 2010-04-15 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 동작 방법 |
US7859919B2 (en) * | 2008-08-27 | 2010-12-28 | Freescale Semiconductor, Inc. | Memory device and method thereof |
US8111542B2 (en) * | 2008-11-19 | 2012-02-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | 8T low leakage SRAM cell |
TWI410971B (zh) * | 2009-12-01 | 2013-10-01 | Faraday Tech Corp | 靜態隨機存取記憶體 |
US8456945B2 (en) | 2010-04-23 | 2013-06-04 | Advanced Micro Devices, Inc. | 10T SRAM for graphics processing |
US8779488B2 (en) | 2011-04-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
GB2508221B (en) | 2012-11-26 | 2015-02-25 | Surecore Ltd | Low-Power SRAM Cells |
GB2510828B (en) * | 2013-02-13 | 2015-06-03 | Surecore Ltd | Single wordline low-power SRAM cells |
US10943648B1 (en) | 2016-12-06 | 2021-03-09 | Gsi Technology, Inc. | Ultra low VDD memory cell with ratioless write port |
US10891076B1 (en) | 2016-12-06 | 2021-01-12 | Gsi Technology, Inc. | Results processing circuits and methods associated with computational memory cells |
US10847213B1 (en) | 2016-12-06 | 2020-11-24 | Gsi Technology, Inc. | Write data processing circuits and methods associated with computational memory cells |
US10854284B1 (en) | 2016-12-06 | 2020-12-01 | Gsi Technology, Inc. | Computational memory cell and processing array device with ratioless write port |
US10998040B2 (en) | 2016-12-06 | 2021-05-04 | Gsi Technology, Inc. | Computational memory cell and processing array device using the memory cells for XOR and XNOR computations |
US10770133B1 (en) | 2016-12-06 | 2020-09-08 | Gsi Technology, Inc. | Read and write data processing circuits and methods associated with computational memory cells that provides write inhibits and read bit line pre-charge inhibits |
US10860318B2 (en) | 2016-12-06 | 2020-12-08 | Gsi Technology, Inc. | Computational memory cell and processing array device using memory cells |
US10860320B1 (en) | 2016-12-06 | 2020-12-08 | Gsi Technology, Inc. | Orthogonal data transposition system and method during data transfers to/from a processing array |
US10777262B1 (en) | 2016-12-06 | 2020-09-15 | Gsi Technology, Inc. | Read data processing circuits and methods associated memory cells |
US10847212B1 (en) | 2016-12-06 | 2020-11-24 | Gsi Technology, Inc. | Read and write data processing circuits and methods associated with computational memory cells using two read multiplexers |
US11227653B1 (en) | 2016-12-06 | 2022-01-18 | Gsi Technology, Inc. | Storage array circuits and methods for computational memory cells |
US10930341B1 (en) | 2019-06-18 | 2021-02-23 | Gsi Technology, Inc. | Processing array device that performs one cycle full adder operation and bit line read/write logic features |
US10877731B1 (en) | 2019-06-18 | 2020-12-29 | Gsi Technology, Inc. | Processing array device that performs one cycle full adder operation and bit line read/write logic features |
US10958272B2 (en) | 2019-06-18 | 2021-03-23 | Gsi Technology, Inc. | Computational memory cell and processing array device using complementary exclusive or memory cells |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS563838Y2 (enrdf_load_stackoverflow) * | 1974-09-19 | 1981-01-28 | ||
JPS5464433A (en) * | 1977-10-31 | 1979-05-24 | Nec Corp | Memory cell |
JPS608553A (ja) * | 1983-06-27 | 1985-01-17 | Isuzu Motors Ltd | 自動クラツチの制御方法 |
JPH0734311B2 (ja) * | 1986-01-21 | 1995-04-12 | 株式会社東芝 | メモリセル |
JP2743526B2 (ja) * | 1989-10-23 | 1998-04-22 | 日本電気株式会社 | レジスタ回路 |
JPH04298887A (ja) * | 1991-03-26 | 1992-10-22 | Nippon Telegr & Teleph Corp <Ntt> | メモリ回路 |
JPH04372793A (ja) * | 1991-06-21 | 1992-12-25 | Nippon Telegr & Teleph Corp <Ntt> | メモリ回路 |
JPH10340584A (ja) * | 1997-06-09 | 1998-12-22 | Nec Corp | 半導体記憶装置 |
JPH117775A (ja) * | 1997-06-17 | 1999-01-12 | Sony Corp | 半導体記憶装置 |
JP3104671B2 (ja) * | 1998-03-09 | 2000-10-30 | 株式会社日立製作所 | 半導体記憶装置 |
-
2001
- 2001-05-18 JP JP2001148893A patent/JP4748877B2/ja not_active Expired - Lifetime
- 2001-07-09 TW TW90116721A patent/TW523742B/zh not_active IP Right Cessation
- 2001-07-09 DE DE2001133281 patent/DE10133281A1/de not_active Ceased
- 2001-07-10 CN CNB011224827A patent/CN1162914C/zh not_active Expired - Fee Related