JP2002075901A5 - - Google Patents
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- Publication number
- JP2002075901A5 JP2002075901A5 JP2000263689A JP2000263689A JP2002075901A5 JP 2002075901 A5 JP2002075901 A5 JP 2002075901A5 JP 2000263689 A JP2000263689 A JP 2000263689A JP 2000263689 A JP2000263689 A JP 2000263689A JP 2002075901 A5 JP2002075901 A5 JP 2002075901A5
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- semiconductor substrate
- heat
- plating
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 37
- 239000000758 substrate Substances 0.000 description 36
- 238000007747 plating Methods 0.000 description 20
- 238000000137 annealing Methods 0.000 description 19
- 230000005855 radiation Effects 0.000 description 18
- 230000001678 irradiating effect Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000263689A JP2002075901A (ja) | 2000-08-31 | 2000-08-31 | アニール装置、メッキ処理システム、および半導体デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000263689A JP2002075901A (ja) | 2000-08-31 | 2000-08-31 | アニール装置、メッキ処理システム、および半導体デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002075901A JP2002075901A (ja) | 2002-03-15 |
| JP2002075901A5 true JP2002075901A5 (enExample) | 2007-10-11 |
Family
ID=18751197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000263689A Pending JP2002075901A (ja) | 2000-08-31 | 2000-08-31 | アニール装置、メッキ処理システム、および半導体デバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002075901A (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100913116B1 (ko) | 2002-04-04 | 2009-08-19 | 토소가부시키가이샤 | 석영유리 용사부품 및 그 제조방법 |
| US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
| JP4995579B2 (ja) * | 2007-01-05 | 2012-08-08 | 株式会社日立国際電気 | 基板処理装置及び半導体デバイスの製造方法 |
| JP5169299B2 (ja) * | 2008-02-22 | 2013-03-27 | 株式会社デンソー | 半導体製造装置 |
| JP5104405B2 (ja) * | 2008-03-03 | 2012-12-19 | 株式会社デンソー | 半導体製造装置 |
| JP5291965B2 (ja) * | 2008-03-25 | 2013-09-18 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| JP5441243B2 (ja) * | 2009-02-24 | 2014-03-12 | 信越石英株式会社 | 赤外線透過性部材の熱処理用石英ガラス治具 |
| KR101297981B1 (ko) * | 2011-10-07 | 2013-08-23 | (주) 예스티 | 기판의 열처리 장치 |
| US9960059B2 (en) * | 2012-03-30 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Honeycomb heaters for integrated circuit manufacturing |
| JP6077807B2 (ja) * | 2012-09-18 | 2017-02-08 | 株式会社日立国際電気 | 加熱装置、基板処理装置及び半導体装置の製造方法 |
| US9768043B2 (en) | 2013-01-16 | 2017-09-19 | Applied Materials, Inc. | Quartz upper and lower domes |
| US11060203B2 (en) | 2014-09-05 | 2021-07-13 | Applied Materials, Inc. | Liner for epi chamber |
| US10760161B2 (en) | 2014-09-05 | 2020-09-01 | Applied Materials, Inc. | Inject insert for EPI chamber |
| WO2016036497A1 (en) * | 2014-09-05 | 2016-03-10 | Applied Materials, Inc. | Upper dome for epi chamber |
| CN114823331B (zh) * | 2022-04-22 | 2023-03-03 | 江苏晟驰微电子有限公司 | 一种用于三极管器件制造的氮氢退火设备及其工艺 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61116820A (ja) * | 1984-11-13 | 1986-06-04 | Fujitsu Ltd | 半導体のアニ−ル方法 |
| JPS63186424A (ja) * | 1987-01-28 | 1988-08-02 | Nikon Corp | 光加熱装置 |
| US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
| JP2743982B2 (ja) * | 1992-04-30 | 1998-04-28 | 信越石英株式会社 | 黒色石英ガラス発泡体及びその製造方法 |
| JP2669358B2 (ja) * | 1994-10-03 | 1997-10-27 | 日本電気株式会社 | 半導体装置の加熱方法 |
| JPH1167681A (ja) * | 1997-08-21 | 1999-03-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2000124156A (ja) * | 1998-10-12 | 2000-04-28 | Sony Corp | 半導体製造装置 |
-
2000
- 2000-08-31 JP JP2000263689A patent/JP2002075901A/ja active Pending
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