JP2002075901A - アニール装置、メッキ処理システム、および半導体デバイスの製造方法 - Google Patents
アニール装置、メッキ処理システム、および半導体デバイスの製造方法Info
- Publication number
- JP2002075901A JP2002075901A JP2000263689A JP2000263689A JP2002075901A JP 2002075901 A JP2002075901 A JP 2002075901A JP 2000263689 A JP2000263689 A JP 2000263689A JP 2000263689 A JP2000263689 A JP 2000263689A JP 2002075901 A JP2002075901 A JP 2002075901A
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- processed
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- annealing
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- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 107
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000010453 quartz Substances 0.000 claims abstract description 45
- 230000005855 radiation Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 49
- 238000004140 cleaning Methods 0.000 claims description 20
- 230000007246 mechanism Effects 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 230000007723 transport mechanism Effects 0.000 claims description 11
- 239000003566 sealing material Substances 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 229910001111 Fine metal Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims description 2
- 238000011109 contamination Methods 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 239000000356 contaminant Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 38
- 239000007789 gas Substances 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000263689A JP2002075901A (ja) | 2000-08-31 | 2000-08-31 | アニール装置、メッキ処理システム、および半導体デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000263689A JP2002075901A (ja) | 2000-08-31 | 2000-08-31 | アニール装置、メッキ処理システム、および半導体デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002075901A true JP2002075901A (ja) | 2002-03-15 |
| JP2002075901A5 JP2002075901A5 (enExample) | 2007-10-11 |
Family
ID=18751197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000263689A Pending JP2002075901A (ja) | 2000-08-31 | 2000-08-31 | アニール装置、メッキ処理システム、および半導体デバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002075901A (enExample) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7081290B2 (en) | 2002-04-04 | 2006-07-25 | Tosoh Corporation | Quartz glass thermal sprayed parts and method for producing the same |
| JP2008166653A (ja) * | 2007-01-05 | 2008-07-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2008288598A (ja) * | 2007-05-20 | 2008-11-27 | Applied Materials Inc | 制御されたアニーリング方法 |
| JP2009200330A (ja) * | 2008-02-22 | 2009-09-03 | Denso Corp | 半導体製造装置 |
| JP2009212185A (ja) * | 2008-03-03 | 2009-09-17 | Denso Corp | 半導体製造装置 |
| JP2009231661A (ja) * | 2008-03-25 | 2009-10-08 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
| JP2010199186A (ja) * | 2009-02-24 | 2010-09-09 | Shinetsu Quartz Prod Co Ltd | 赤外線透過性部材の熱処理用石英ガラス治具 |
| KR101297981B1 (ko) * | 2011-10-07 | 2013-08-23 | (주) 예스티 | 기판의 열처리 장치 |
| CN103369744A (zh) * | 2012-03-30 | 2013-10-23 | 台湾积体电路制造股份有限公司 | 用于集成电路制造的蜂巢状锥形加热器 |
| JP2014060275A (ja) * | 2012-09-18 | 2014-04-03 | Hitachi Kokusai Electric Inc | 加熱装置、基板処理装置及び半導体製造方法 |
| WO2014113179A1 (en) * | 2013-01-16 | 2014-07-24 | Applied Materials, Inc | Quartz upper and lower domes |
| WO2016036497A1 (en) * | 2014-09-05 | 2016-03-10 | Applied Materials, Inc. | Upper dome for epi chamber |
| US10760161B2 (en) | 2014-09-05 | 2020-09-01 | Applied Materials, Inc. | Inject insert for EPI chamber |
| US11060203B2 (en) | 2014-09-05 | 2021-07-13 | Applied Materials, Inc. | Liner for epi chamber |
| CN114823331A (zh) * | 2022-04-22 | 2022-07-29 | 江苏晟驰微电子有限公司 | 一种用于三极管器件制造的氮氢退火设备及其工艺 |
| RU217976U1 (ru) * | 2023-02-14 | 2023-04-27 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | Многофункциональное устройство для соединения полупроводниковых пластин |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61116820A (ja) * | 1984-11-13 | 1986-06-04 | Fujitsu Ltd | 半導体のアニ−ル方法 |
| JPS63186424A (ja) * | 1987-01-28 | 1988-08-02 | Nikon Corp | 光加熱装置 |
| JPH05306142A (ja) * | 1992-04-30 | 1993-11-19 | Shinetsu Quartz Prod Co Ltd | 黒色石英ガラス発泡体及びその製造方法 |
| JPH0758020A (ja) * | 1990-03-09 | 1995-03-03 | Applied Materials Inc | 半導体加工処理用二重ドーム反応器 |
| JPH08107078A (ja) * | 1994-10-03 | 1996-04-23 | Nec Corp | 半導体装置の加熱装置およびその方法 |
| JPH1167681A (ja) * | 1997-08-21 | 1999-03-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2000124156A (ja) * | 1998-10-12 | 2000-04-28 | Sony Corp | 半導体製造装置 |
-
2000
- 2000-08-31 JP JP2000263689A patent/JP2002075901A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61116820A (ja) * | 1984-11-13 | 1986-06-04 | Fujitsu Ltd | 半導体のアニ−ル方法 |
| JPS63186424A (ja) * | 1987-01-28 | 1988-08-02 | Nikon Corp | 光加熱装置 |
| JPH0758020A (ja) * | 1990-03-09 | 1995-03-03 | Applied Materials Inc | 半導体加工処理用二重ドーム反応器 |
| JPH05306142A (ja) * | 1992-04-30 | 1993-11-19 | Shinetsu Quartz Prod Co Ltd | 黒色石英ガラス発泡体及びその製造方法 |
| JPH08107078A (ja) * | 1994-10-03 | 1996-04-23 | Nec Corp | 半導体装置の加熱装置およびその方法 |
| JPH1167681A (ja) * | 1997-08-21 | 1999-03-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2000124156A (ja) * | 1998-10-12 | 2000-04-28 | Sony Corp | 半導体製造装置 |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7081290B2 (en) | 2002-04-04 | 2006-07-25 | Tosoh Corporation | Quartz glass thermal sprayed parts and method for producing the same |
| JP2008166653A (ja) * | 2007-01-05 | 2008-07-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2008288598A (ja) * | 2007-05-20 | 2008-11-27 | Applied Materials Inc | 制御されたアニーリング方法 |
| JP2009200330A (ja) * | 2008-02-22 | 2009-09-03 | Denso Corp | 半導体製造装置 |
| JP2009212185A (ja) * | 2008-03-03 | 2009-09-17 | Denso Corp | 半導体製造装置 |
| JP2009231661A (ja) * | 2008-03-25 | 2009-10-08 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
| JP2010199186A (ja) * | 2009-02-24 | 2010-09-09 | Shinetsu Quartz Prod Co Ltd | 赤外線透過性部材の熱処理用石英ガラス治具 |
| KR101297981B1 (ko) * | 2011-10-07 | 2013-08-23 | (주) 예스티 | 기판의 열처리 장치 |
| CN103369744A (zh) * | 2012-03-30 | 2013-10-23 | 台湾积体电路制造股份有限公司 | 用于集成电路制造的蜂巢状锥形加热器 |
| US9960059B2 (en) | 2012-03-30 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Honeycomb heaters for integrated circuit manufacturing |
| KR101462315B1 (ko) * | 2012-03-30 | 2014-11-14 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 집적 회로 제조를 위한 허니 콘 히터들 |
| JP2014060275A (ja) * | 2012-09-18 | 2014-04-03 | Hitachi Kokusai Electric Inc | 加熱装置、基板処理装置及び半導体製造方法 |
| CN104885192A (zh) * | 2013-01-16 | 2015-09-02 | 应用材料公司 | 石英上拱形结构及下拱形结构 |
| US9768043B2 (en) | 2013-01-16 | 2017-09-19 | Applied Materials, Inc. | Quartz upper and lower domes |
| US20180005856A1 (en) * | 2013-01-16 | 2018-01-04 | Applied Materials, Inc. | Quartz upper and lower domes |
| WO2014113179A1 (en) * | 2013-01-16 | 2014-07-24 | Applied Materials, Inc | Quartz upper and lower domes |
| TWI638070B (zh) * | 2013-01-16 | 2018-10-11 | 應用材料股份有限公司 | 石英的上部及下部圓頂 |
| WO2016036497A1 (en) * | 2014-09-05 | 2016-03-10 | Applied Materials, Inc. | Upper dome for epi chamber |
| TWI662146B (zh) * | 2014-09-05 | 2019-06-11 | 美商應用材料股份有限公司 | 用於ｅｐｉ腔室的上圓頂 |
| US10760161B2 (en) | 2014-09-05 | 2020-09-01 | Applied Materials, Inc. | Inject insert for EPI chamber |
| US11060203B2 (en) | 2014-09-05 | 2021-07-13 | Applied Materials, Inc. | Liner for epi chamber |
| CN114823331A (zh) * | 2022-04-22 | 2022-07-29 | 江苏晟驰微电子有限公司 | 一种用于三极管器件制造的氮氢退火设备及其工艺 |
| CN114823331B (zh) * | 2022-04-22 | 2023-03-03 | 江苏晟驰微电子有限公司 | 一种用于三极管器件制造的氮氢退火设备及其工艺 |
| RU217976U1 (ru) * | 2023-02-14 | 2023-04-27 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | Многофункциональное устройство для соединения полупроводниковых пластин |
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