JP2002050559A - 露光装置及びそれを用いたデバイスの製造方法 - Google Patents

露光装置及びそれを用いたデバイスの製造方法

Info

Publication number
JP2002050559A
JP2002050559A JP2000233196A JP2000233196A JP2002050559A JP 2002050559 A JP2002050559 A JP 2002050559A JP 2000233196 A JP2000233196 A JP 2000233196A JP 2000233196 A JP2000233196 A JP 2000233196A JP 2002050559 A JP2002050559 A JP 2002050559A
Authority
JP
Japan
Prior art keywords
scanning
exposure
exposure apparatus
substrate
scanning speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000233196A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002050559A5 (enExample
Inventor
Mitsuru Hiura
充 樋浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2000233196A priority Critical patent/JP2002050559A/ja
Priority to US09/915,325 priority patent/US6891175B2/en
Publication of JP2002050559A publication Critical patent/JP2002050559A/ja
Publication of JP2002050559A5 publication Critical patent/JP2002050559A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2000233196A 2000-08-01 2000-08-01 露光装置及びそれを用いたデバイスの製造方法 Withdrawn JP2002050559A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000233196A JP2002050559A (ja) 2000-08-01 2000-08-01 露光装置及びそれを用いたデバイスの製造方法
US09/915,325 US6891175B2 (en) 2000-08-01 2001-07-27 Exposure apparatus and device manufacturing method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000233196A JP2002050559A (ja) 2000-08-01 2000-08-01 露光装置及びそれを用いたデバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2002050559A true JP2002050559A (ja) 2002-02-15
JP2002050559A5 JP2002050559A5 (enExample) 2007-09-13

Family

ID=18725752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000233196A Withdrawn JP2002050559A (ja) 2000-08-01 2000-08-01 露光装置及びそれを用いたデバイスの製造方法

Country Status (2)

Country Link
US (1) US6891175B2 (enExample)
JP (1) JP2002050559A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115659892A (zh) * 2022-10-15 2023-01-31 深圳市华力宇电子科技有限公司 基于具有特殊小数点的晶片尺寸建立晶圆芯片模型的方法

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JP2004072076A (ja) * 2002-06-10 2004-03-04 Nikon Corp 露光装置及びステージ装置、並びにデバイス製造方法
SG115631A1 (en) * 2003-03-11 2005-10-28 Asml Netherlands Bv Lithographic projection assembly, load lock and method for transferring objects
CN101677061B (zh) 2004-03-26 2013-04-03 株式会社半导体能源研究所 激光辐照方法和激光辐照装置
US8525075B2 (en) * 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
WO2006022196A1 (en) * 2004-08-23 2006-03-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP2006269941A (ja) * 2005-03-25 2006-10-05 Canon Inc 導光装置、露光装置、並びにデバイス製造方法
WO2006118312A1 (en) * 2005-05-02 2006-11-09 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
US20070079936A1 (en) * 2005-09-29 2007-04-12 Applied Materials, Inc. Bonded multi-layer RF window
JP2009099873A (ja) * 2007-10-18 2009-05-07 Canon Inc 露光装置およびデバイス製造方法
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8039176B2 (en) 2009-08-26 2011-10-18 D2S, Inc. Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
US8057970B2 (en) 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US7901850B2 (en) 2008-09-01 2011-03-08 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US8669023B2 (en) 2008-09-01 2014-03-11 D2S, Inc. Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography
JP2010232217A (ja) * 2009-03-25 2010-10-14 Canon Inc 露光システム、露光装置のテスト方法及びデバイス製造方法
US8339573B2 (en) * 2009-05-27 2012-12-25 3M Innovative Properties Company Method and apparatus for photoimaging a substrate
TWI496182B (zh) * 2009-08-26 2015-08-11 D2S Inc 以可變束模糊技術使用帶電粒子束微影術製造表面之方法及系統
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US20110089345A1 (en) * 2009-10-21 2011-04-21 D2S, Inc. Method and system for manufacturing a surface using charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
WO2012148606A2 (en) 2011-04-26 2012-11-01 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
JP6189933B2 (ja) 2012-04-18 2017-08-30 ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム
JP6234998B2 (ja) 2012-04-18 2017-11-22 ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． 荷電粒子ビームリソグラフィを用いてパターンを形成するための方法およびシステム
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
US8959463B2 (en) 2012-11-08 2015-02-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
CN113777888B (zh) * 2020-06-10 2025-01-07 京东方科技集团股份有限公司 数字化曝光控制方法及装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3387581B2 (ja) 1993-11-04 2003-03-17 キヤノン株式会社 露光装置及び該露光装置を用いてデバイスを製造する方法
US5621216A (en) * 1996-04-26 1997-04-15 International Business Machines Corporation Hardware/software implementation for multipass E-beam mask writing
US6538723B2 (en) 1996-08-05 2003-03-25 Nikon Corporation Scanning exposure in which an object and pulsed light are moved relatively, exposing a substrate by projecting a pattern on a mask onto the substrate with pulsed light from a light source, light sources therefor, and methods of manufacturing
JPH10270345A (ja) 1997-03-24 1998-10-09 Nikon Corp 走査露光方法及び走査型露光装置
JPH10223513A (ja) 1997-02-12 1998-08-21 Nikon Corp 走査型露光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115659892A (zh) * 2022-10-15 2023-01-31 深圳市华力宇电子科技有限公司 基于具有特殊小数点的晶片尺寸建立晶圆芯片模型的方法
CN115659892B (zh) * 2022-10-15 2025-08-01 深圳市华力宇电子科技有限公司 基于具有特殊小数点的晶片尺寸建立晶圆芯片模型的方法

Also Published As

Publication number Publication date
US20020024646A1 (en) 2002-02-28
US6891175B2 (en) 2005-05-10

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