JP2001518558A5 - - Google Patents
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- Publication number
- JP2001518558A5 JP2001518558A5 JP2000513984A JP2000513984A JP2001518558A5 JP 2001518558 A5 JP2001518558 A5 JP 2001518558A5 JP 2000513984 A JP2000513984 A JP 2000513984A JP 2000513984 A JP2000513984 A JP 2000513984A JP 2001518558 A5 JP2001518558 A5 JP 2001518558A5
- Authority
- JP
- Japan
- Prior art keywords
- sputtering target
- sputtering
- vapor deposition
- physical vapor
- energy source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 description 48
- 238000004544 sputter deposition Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 20
- 238000005240 physical vapour deposition Methods 0.000 description 19
- 239000002245 particle Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 6
- 230000001939 inductive effect Effects 0.000 description 6
- 238000005513 bias potential Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/939,182 US6168690B1 (en) | 1997-09-29 | 1997-09-29 | Methods and apparatus for physical vapor deposition |
| US08/939,182 | 1997-09-29 | ||
| PCT/US1998/020707 WO1999016925A1 (en) | 1997-09-29 | 1998-09-29 | Improved methods and apparatus for physical vapor deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001518558A JP2001518558A (ja) | 2001-10-16 |
| JP2001518558A5 true JP2001518558A5 (https=) | 2006-01-05 |
| JP4564164B2 JP4564164B2 (ja) | 2010-10-20 |
Family
ID=25472686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000513984A Expired - Fee Related JP4564164B2 (ja) | 1997-09-29 | 1998-09-29 | 改良された物理蒸着方法及び物理蒸着装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6168690B1 (https=) |
| JP (1) | JP4564164B2 (https=) |
| KR (1) | KR100641956B1 (https=) |
| WO (1) | WO1999016925A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6305316B1 (en) * | 2000-07-20 | 2001-10-23 | Axcelis Technologies, Inc. | Integrated power oscillator RF source of plasma immersion ion implantation system |
| US6709553B2 (en) | 2002-05-09 | 2004-03-23 | Applied Materials, Inc. | Multiple-step sputter deposition |
| DE102004005278B4 (de) * | 2004-02-03 | 2008-09-11 | Siemens Ag | Verfahren zur Herstellung transversaler nichtzylindrischer Gradientenspulen mit zumindest einem divergenten Abschnitt |
| US7691243B2 (en) * | 2004-06-22 | 2010-04-06 | Tokyo Electron Limited | Internal antennae for plasma processing with metal plasma |
| US7820020B2 (en) | 2005-02-03 | 2010-10-26 | Applied Materials, Inc. | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas |
| US8361283B2 (en) * | 2005-07-28 | 2013-01-29 | Seagate Technology Llc | Method and apparatus for cleaning a target of a sputtering apparatus |
| KR100813564B1 (ko) * | 2006-09-11 | 2008-03-17 | 배상열 | 전압가변형 박막증착 방법 및 장치 |
| KR102317822B1 (ko) | 2012-07-02 | 2021-10-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 물리 기상 증착에 의한 알루미늄-질화물 버퍼 및 활성 층들 |
| CN111715887A (zh) * | 2019-03-18 | 2020-09-29 | 安世亚太科技股份有限公司 | 一种粉体表面功能化的旋转电极金属制粉的系统及方法 |
| JP7335490B2 (ja) * | 2019-05-20 | 2023-08-30 | 日新電機株式会社 | スパッタリング装置及びそのクリーニング方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2069835A (en) * | 1935-04-25 | 1937-02-09 | Bell Telephone Labor Inc | Coating apparatus |
| US3595773A (en) | 1965-12-17 | 1971-07-27 | Euratom | Process for depositing on surfaces |
| US3501393A (en) * | 1967-05-05 | 1970-03-17 | Litton Systems Inc | Apparatus for sputtering wherein the plasma is confined by the target structure |
| DE1765850A1 (de) * | 1967-11-10 | 1971-10-28 | Euratom | Verfahren und Vorrichtung zum Aufbringen von duennen Schichten |
| DE1905058C3 (de) | 1969-02-01 | 1973-10-04 | Leybold-Heraeus Gmbh & Co, Kg, 5000 Koeln-Bayental | Vorrichtung für die Beschichtung von Werkstücken durch Hochfrequenz-Plasmazerstäubung von Werkstoffen im Vakuum |
| DE2307649B2 (de) * | 1973-02-16 | 1980-07-31 | Robert Bosch Gmbh, 7000 Stuttgart | Anordnung zum Aufstäuben verschiedener Materialien auf einem Substrat |
| DE69028445T2 (de) * | 1989-06-02 | 1997-02-20 | Toshiba Kawasaki Kk | Vorrichtung und Verfahren zur Erzeugung von Dünnschichten |
| US5069770A (en) * | 1990-07-23 | 1991-12-03 | Eastman Kodak Company | Sputtering process employing an enclosed sputtering target |
| WO1992007969A1 (en) * | 1990-10-31 | 1992-05-14 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
| US5178739A (en) | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
| US5135634A (en) * | 1991-02-14 | 1992-08-04 | Sputtered Films, Inc. | Apparatus for depositing a thin layer of sputtered atoms on a member |
| US5401350A (en) * | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| JPH0718433A (ja) * | 1993-06-30 | 1995-01-20 | Kobe Steel Ltd | Ｉｃｐスパッタリング処理装置 |
| JP3045443B2 (ja) * | 1993-10-20 | 2000-05-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5798029A (en) * | 1994-04-22 | 1998-08-25 | Applied Materials, Inc. | Target for sputtering equipment |
| US5556525A (en) * | 1994-09-30 | 1996-09-17 | Advanced Micro Devices, Inc. | PVD sputter system having nonplanar target configuration and methods for operating same |
| US5693197A (en) * | 1994-10-06 | 1997-12-02 | Hmt Technology Corporation | DC magnetron sputtering method and apparatus |
| JPH08288096A (ja) * | 1995-02-13 | 1996-11-01 | Mitsubishi Electric Corp | プラズマ処理装置 |
| JP3745790B2 (ja) * | 1995-05-15 | 2006-02-15 | 株式会社デンソー | 光情報記録媒体の製造装置及び製造方法 |
| US6368469B1 (en) | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
| US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
| US5800688A (en) * | 1997-04-21 | 1998-09-01 | Tokyo Electron Limited | Apparatus for ionized sputtering |
-
1997
- 1997-09-29 US US08/939,182 patent/US6168690B1/en not_active Expired - Lifetime
-
1998
- 1998-09-29 JP JP2000513984A patent/JP4564164B2/ja not_active Expired - Fee Related
- 1998-09-29 KR KR1020007003247A patent/KR100641956B1/ko not_active Expired - Fee Related
- 1998-09-29 WO PCT/US1998/020707 patent/WO1999016925A1/en not_active Ceased
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