KR100641956B1 - 물리적 증기 증착을 위한 스퍼터 타겟 및 이를 포함한 장치 및 방법 - Google Patents

물리적 증기 증착을 위한 스퍼터 타겟 및 이를 포함한 장치 및 방법 Download PDF

Info

Publication number
KR100641956B1
KR100641956B1 KR1020007003247A KR20007003247A KR100641956B1 KR 100641956 B1 KR100641956 B1 KR 100641956B1 KR 1020007003247 A KR1020007003247 A KR 1020007003247A KR 20007003247 A KR20007003247 A KR 20007003247A KR 100641956 B1 KR100641956 B1 KR 100641956B1
Authority
KR
South Korea
Prior art keywords
sputter
sputter target
power supply
antenna
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020007003247A
Other languages
English (en)
Korean (ko)
Other versions
KR20010030729A (ko
Inventor
러셀에프. 쥬엣
니일엠. 벤자민
앤드류제이. 페리
바히드 버헤디
Original Assignee
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리서치 코포레이션 filed Critical 램 리서치 코포레이션
Publication of KR20010030729A publication Critical patent/KR20010030729A/ko
Application granted granted Critical
Publication of KR100641956B1 publication Critical patent/KR100641956B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020007003247A 1997-09-29 1998-09-29 물리적 증기 증착을 위한 스퍼터 타겟 및 이를 포함한 장치 및 방법 Expired - Fee Related KR100641956B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/939,182 US6168690B1 (en) 1997-09-29 1997-09-29 Methods and apparatus for physical vapor deposition
US8/939,182 1997-09-29
US08/939,182 1997-09-29
PCT/US1998/020707 WO1999016925A1 (en) 1997-09-29 1998-09-29 Improved methods and apparatus for physical vapor deposition

Publications (2)

Publication Number Publication Date
KR20010030729A KR20010030729A (ko) 2001-04-16
KR100641956B1 true KR100641956B1 (ko) 2006-11-06

Family

ID=25472686

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007003247A Expired - Fee Related KR100641956B1 (ko) 1997-09-29 1998-09-29 물리적 증기 증착을 위한 스퍼터 타겟 및 이를 포함한 장치 및 방법

Country Status (4)

Country Link
US (1) US6168690B1 (https=)
JP (1) JP4564164B2 (https=)
KR (1) KR100641956B1 (https=)
WO (1) WO1999016925A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6305316B1 (en) * 2000-07-20 2001-10-23 Axcelis Technologies, Inc. Integrated power oscillator RF source of plasma immersion ion implantation system
US6709553B2 (en) 2002-05-09 2004-03-23 Applied Materials, Inc. Multiple-step sputter deposition
DE102004005278B4 (de) * 2004-02-03 2008-09-11 Siemens Ag Verfahren zur Herstellung transversaler nichtzylindrischer Gradientenspulen mit zumindest einem divergenten Abschnitt
US7691243B2 (en) * 2004-06-22 2010-04-06 Tokyo Electron Limited Internal antennae for plasma processing with metal plasma
US7820020B2 (en) 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
US8361283B2 (en) * 2005-07-28 2013-01-29 Seagate Technology Llc Method and apparatus for cleaning a target of a sputtering apparatus
KR100813564B1 (ko) * 2006-09-11 2008-03-17 배상열 전압가변형 박막증착 방법 및 장치
KR102317822B1 (ko) 2012-07-02 2021-10-25 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착에 의한 알루미늄-질화물 버퍼 및 활성 층들
CN111715887A (zh) * 2019-03-18 2020-09-29 安世亚太科技股份有限公司 一种粉体表面功能化的旋转电极金属制粉的系统及方法
JP7335490B2 (ja) * 2019-05-20 2023-08-30 日新電機株式会社 スパッタリング装置及びそのクリーニング方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3595773A (en) * 1965-12-17 1971-07-27 Euratom Process for depositing on surfaces

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2069835A (en) * 1935-04-25 1937-02-09 Bell Telephone Labor Inc Coating apparatus
US3501393A (en) * 1967-05-05 1970-03-17 Litton Systems Inc Apparatus for sputtering wherein the plasma is confined by the target structure
DE1765850A1 (de) * 1967-11-10 1971-10-28 Euratom Verfahren und Vorrichtung zum Aufbringen von duennen Schichten
DE1905058C3 (de) 1969-02-01 1973-10-04 Leybold-Heraeus Gmbh & Co, Kg, 5000 Koeln-Bayental Vorrichtung für die Beschichtung von Werkstücken durch Hochfrequenz-Plasmazerstäubung von Werkstoffen im Vakuum
DE2307649B2 (de) * 1973-02-16 1980-07-31 Robert Bosch Gmbh, 7000 Stuttgart Anordnung zum Aufstäuben verschiedener Materialien auf einem Substrat
DE69028445T2 (de) * 1989-06-02 1997-02-20 Toshiba Kawasaki Kk Vorrichtung und Verfahren zur Erzeugung von Dünnschichten
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
WO1992007969A1 (en) * 1990-10-31 1992-05-14 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5178739A (en) 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5135634A (en) * 1991-02-14 1992-08-04 Sputtered Films, Inc. Apparatus for depositing a thin layer of sputtered atoms on a member
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
JPH0718433A (ja) * 1993-06-30 1995-01-20 Kobe Steel Ltd Ｉｃｐスパッタリング処理装置
JP3045443B2 (ja) * 1993-10-20 2000-05-29 東京エレクトロン株式会社 プラズマ処理装置
US5798029A (en) * 1994-04-22 1998-08-25 Applied Materials, Inc. Target for sputtering equipment
US5556525A (en) * 1994-09-30 1996-09-17 Advanced Micro Devices, Inc. PVD sputter system having nonplanar target configuration and methods for operating same
US5693197A (en) * 1994-10-06 1997-12-02 Hmt Technology Corporation DC magnetron sputtering method and apparatus
JPH08288096A (ja) * 1995-02-13 1996-11-01 Mitsubishi Electric Corp プラズマ処理装置
JP3745790B2 (ja) * 1995-05-15 2006-02-15 株式会社デンソー 光情報記録媒体の製造装置及び製造方法
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
US5800688A (en) * 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3595773A (en) * 1965-12-17 1971-07-27 Euratom Process for depositing on surfaces

Also Published As

Publication number Publication date
JP2001518558A (ja) 2001-10-16
KR20010030729A (ko) 2001-04-16
WO1999016925A1 (en) 1999-04-08
JP4564164B2 (ja) 2010-10-20
US6168690B1 (en) 2001-01-02

Similar Documents

Publication Publication Date Title
KR101376671B1 (ko) 물리 기상 증착 반응기
US6413382B1 (en) Pulsed sputtering with a small rotating magnetron
US6254737B1 (en) Active shield for generating a plasma for sputtering
US6238528B1 (en) Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
EP1174902A2 (en) Coaxial electromagnet in a magnetron sputtering reactor
JP4588212B2 (ja) 重複端部を有するコイルを備えるスパッタリング装置
JPH07188917A (ja) コリメーション装置
KR20010024008A (ko) 유도 커플된 플라즈마원에서의 균일 증착 방법
KR100641956B1 (ko) 물리적 증기 증착을 위한 스퍼터 타겟 및 이를 포함한 장치 및 방법
JP2001506401A (ja) 基板上に均一な密度のプラズマを生成するための装置及び方法
US6146508A (en) Sputtering method and apparatus with small diameter RF coil
JP5324744B2 (ja) 付着装置及び方法
US6235169B1 (en) Modulated power for ionized metal plasma deposition
US6409890B1 (en) Method and apparatus for forming a uniform layer on a workpiece during sputtering
JPH07245195A (ja) プラズマ処理方法及び装置
KR101239776B1 (ko) 타깃에 인가되는 ｒｆ 소스 파워에 의한 물리 기상 증착플라즈마 반응기

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20121010

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20131010

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20141027

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20141027

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000