CN101517691B - 电子回旋共振等离子体源 - Google Patents
电子回旋共振等离子体源 Download PDFInfo
- Publication number
- CN101517691B CN101517691B CN2007800352418A CN200780035241A CN101517691B CN 101517691 B CN101517691 B CN 101517691B CN 2007800352418 A CN2007800352418 A CN 2007800352418A CN 200780035241 A CN200780035241 A CN 200780035241A CN 101517691 B CN101517691 B CN 101517691B
- Authority
- CN
- China
- Prior art keywords
- plasma
- vacuum flange
- antenna
- annulus
- ecr plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 230000005405 multipole Effects 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 238000013461 design Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 91
- 238000000576 coating method Methods 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Glass Compositions (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006037144.5 | 2006-08-09 | ||
DE102006037144A DE102006037144B4 (de) | 2006-08-09 | 2006-08-09 | ECR-Plasmaquelle |
PCT/DE2007/001441 WO2008017304A2 (de) | 2006-08-09 | 2007-08-08 | Ecr-plasmaquelle |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101517691A CN101517691A (zh) | 2009-08-26 |
CN101517691B true CN101517691B (zh) | 2012-06-20 |
Family
ID=38895809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800352418A Expired - Fee Related CN101517691B (zh) | 2006-08-09 | 2007-08-08 | 电子回旋共振等离子体源 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20090242131A1 (zh) |
EP (1) | EP2050120B1 (zh) |
JP (1) | JP2010500470A (zh) |
KR (1) | KR20090042955A (zh) |
CN (1) | CN101517691B (zh) |
AT (1) | ATE501521T1 (zh) |
AU (1) | AU2007283313A1 (zh) |
DE (2) | DE102006037144B4 (zh) |
WO (1) | WO2008017304A2 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008153064A1 (ja) * | 2007-06-11 | 2008-12-18 | Tokyo Electron Limited | プラズマ処理装置および処理方法 |
JP5213530B2 (ja) * | 2008-06-11 | 2013-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
DE102009057375B3 (de) * | 2009-12-09 | 2011-05-26 | Roth & Rau Ag | ECR-Plasmaquelle mit einem Beschichtungsschutz und Anwendung des Beschichtungsschutzes |
US9397380B2 (en) | 2011-01-28 | 2016-07-19 | Applied Materials, Inc. | Guided wave applicator with non-gaseous dielectric for plasma chamber |
US9048518B2 (en) | 2011-06-21 | 2015-06-02 | Applied Materials, Inc. | Transmission line RF applicator for plasma chamber |
FR2993429B1 (fr) * | 2012-07-11 | 2016-08-05 | Centre Nat De La Rech Scient (Cnrs) | Applicateur micro-onde coaxial pour la production de plasma |
FR2993428B1 (fr) * | 2012-07-11 | 2014-08-08 | Centre Nat Rech Scient | Applicateur d'onde de surface pour la production de plasma |
FR2995493B1 (fr) * | 2012-09-11 | 2014-08-22 | Hydromecanique & Frottement | Dispositif pour generer un plasma presentant une etendue importante le long d'un axe par resonnance cyclotronique electronique rce a partir d'un milieu gazeux |
EP2938752A4 (en) * | 2012-12-28 | 2016-05-25 | Sputtering Components Inc | PLASMA ACTIVATED CHEMICAL VAPOR DEPOSITION SOURCE (PECVD) |
KR101605060B1 (ko) * | 2014-09-30 | 2016-03-21 | 한국기초과학지원연구원 | Ecr 플라즈마 발생장치 |
FR3042092B1 (fr) * | 2015-10-05 | 2019-07-26 | Sairem Societe Pour L'application Industrielle De La Recherche En Electronique Et Micro Ondes | Dispositif elementaire de production d’un plasma avec applicateur coaxial |
EP3309815B1 (de) * | 2016-10-12 | 2019-03-20 | Meyer Burger (Germany) AG | Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung |
KR101968549B1 (ko) * | 2017-09-20 | 2019-04-12 | 한국기초과학지원연구원 | 이온빔 가공·주입을 위한 소형의 콘타입 마이크로파 ecr 플라즈마 발생원 |
JP6570144B2 (ja) * | 2017-11-24 | 2019-09-04 | 国立研究開発法人宇宙航空研究開発機構 | マイクロ波プラズマ源 |
CN108566717A (zh) * | 2018-06-29 | 2018-09-21 | 合肥中科离子医学技术装备有限公司 | 采用微波垂直注入激励等离子体发生装置 |
JP6579635B1 (ja) * | 2018-09-12 | 2019-09-25 | 春日電機株式会社 | 除電装置及びプラズマ発生装置 |
DE102019111908B4 (de) * | 2019-05-08 | 2021-08-12 | Dreebit Gmbh | ECR-Ionenquelle und Verfahren zum Betreiben einer ECR-Ionenquelle |
CN112996209B (zh) * | 2021-05-07 | 2021-08-10 | 四川大学 | 一种微波激发常压等离子体射流的结构和阵列结构 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1098243A (zh) * | 1985-10-14 | 1995-02-01 | 株式会社半导体能源研究所 | 利用磁场的微波增强型cvd系统和方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5024716A (en) * | 1988-01-20 | 1991-06-18 | Canon Kabushiki Kaisha | Plasma processing apparatus for etching, ashing and film-formation |
US5107170A (en) * | 1988-10-18 | 1992-04-21 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
DD300723A7 (de) * | 1990-03-20 | 1992-07-09 | Karl Marx Stadt Tech Hochschul | Mikrowellen - Plasmaquelle |
JP2937468B2 (ja) * | 1990-11-19 | 1999-08-23 | 日本真空技術株式会社 | プラズマ発生装置 |
JPH05121362A (ja) * | 1991-10-25 | 1993-05-18 | Sony Corp | Ecrプラズマ処理装置 |
JP3284278B2 (ja) * | 1992-10-30 | 2002-05-20 | 株式会社日立製作所 | プラズマ処理装置 |
JPH07296991A (ja) * | 1994-04-25 | 1995-11-10 | Kokusai Electric Co Ltd | マイクロ波プラズマ発生装置 |
WO1996013621A1 (en) * | 1994-10-31 | 1996-05-09 | Krogh Ole D | An ecr plasma source |
US6034346A (en) * | 1995-05-19 | 2000-03-07 | Hitachi, Ltd. | Method and apparatus for plasma processing apparatus |
JP2959508B2 (ja) * | 1997-02-14 | 1999-10-06 | 日新電機株式会社 | プラズマ発生装置 |
JPH11260594A (ja) * | 1998-03-12 | 1999-09-24 | Hitachi Ltd | プラズマ処理装置 |
WO1999049705A1 (fr) * | 1998-03-20 | 1999-09-30 | Tokyo Electron Limited | Dispositif de traitement plasmique |
JP2000012294A (ja) * | 1998-06-26 | 2000-01-14 | Hitachi Ltd | プラズマ処理装置 |
JP3608416B2 (ja) * | 1999-02-02 | 2005-01-12 | 日新電機株式会社 | プラズマ源 |
TW516113B (en) * | 1999-04-14 | 2003-01-01 | Hitachi Ltd | Plasma processing device and plasma processing method |
FR2797372B1 (fr) * | 1999-08-04 | 2002-10-25 | Metal Process | Procede de production de plasmas elementaires en vue de creer un plasma uniforme pour une surface d'utilisation et dispositif de production d'un tel plasma |
SE521904C2 (sv) * | 1999-11-26 | 2003-12-16 | Ladislav Bardos | Anordning för hybridplasmabehandling |
US6622650B2 (en) * | 1999-11-30 | 2003-09-23 | Tokyo Electron Limited | Plasma processing apparatus |
JP4298876B2 (ja) * | 1999-11-30 | 2009-07-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4133490B2 (ja) * | 2003-03-24 | 2008-08-13 | 俊夫 後藤 | 成膜方法 |
-
2006
- 2006-08-09 DE DE102006037144A patent/DE102006037144B4/de not_active Expired - Fee Related
-
2007
- 2007-08-08 EP EP07817428A patent/EP2050120B1/de not_active Not-in-force
- 2007-08-08 CN CN2007800352418A patent/CN101517691B/zh not_active Expired - Fee Related
- 2007-08-08 WO PCT/DE2007/001441 patent/WO2008017304A2/de active Application Filing
- 2007-08-08 KR KR1020097004872A patent/KR20090042955A/ko not_active Application Discontinuation
- 2007-08-08 DE DE502007006684T patent/DE502007006684D1/de active Active
- 2007-08-08 AT AT07817428T patent/ATE501521T1/de active
- 2007-08-08 US US12/310,081 patent/US20090242131A1/en not_active Abandoned
- 2007-08-08 AU AU2007283313A patent/AU2007283313A1/en not_active Abandoned
- 2007-08-08 JP JP2009523148A patent/JP2010500470A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1098243A (zh) * | 1985-10-14 | 1995-02-01 | 株式会社半导体能源研究所 | 利用磁场的微波增强型cvd系统和方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2008017304A3 (de) | 2008-04-03 |
EP2050120B1 (de) | 2011-03-09 |
ATE501521T1 (de) | 2011-03-15 |
WO2008017304A2 (de) | 2008-02-14 |
DE502007006684D1 (de) | 2011-04-21 |
KR20090042955A (ko) | 2009-05-04 |
EP2050120A2 (de) | 2009-04-22 |
JP2010500470A (ja) | 2010-01-07 |
DE102006037144A1 (de) | 2008-02-28 |
AU2007283313A1 (en) | 2008-02-14 |
US20090242131A1 (en) | 2009-10-01 |
CN101517691A (zh) | 2009-08-26 |
DE102006037144B4 (de) | 2010-05-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101517691B (zh) | 电子回旋共振等离子体源 | |
KR100639843B1 (ko) | Hdp-cvd챔버용플라즈마소오스 | |
US11450509B2 (en) | Inductive plasma source with metallic shower head using b-field concentrator | |
EP1076911B1 (en) | Method and apparatus for ionized physical vapor deposition | |
TWI591752B (zh) | 具有射頻返回路徑的基材支撐件 | |
US6368469B1 (en) | Coils for generating a plasma and for sputtering | |
US6197165B1 (en) | Method and apparatus for ionized physical vapor deposition | |
JP6097471B2 (ja) | 環状のバッフル | |
US20060177599A1 (en) | Dual plasma beam sources and method | |
US9984857B2 (en) | Plasma generation device | |
US6660134B1 (en) | Feedthrough overlap coil | |
JPH10189296A (ja) | 平行板電極プラズマリアクタ | |
US6231725B1 (en) | Apparatus for sputtering material onto a workpiece with the aid of a plasma | |
CA2651512A1 (en) | Electrode systems and methods of using electrodes | |
US20240084453A1 (en) | Carrier device and semiconductor processing equipment | |
TW408358B (en) | Improved inductively coupled plasma source | |
US6235169B1 (en) | Modulated power for ionized metal plasma deposition | |
CN103168338A (zh) | 具有大靶的用于高压溅射的溅射源和溅射方法 | |
KR19980086991A (ko) | 고밀도 플라즈마를 위한 전력인가 실드 소오스 | |
CN105349955B (zh) | 用在磁控溅射设备中的一体化阳极和活性反应气体源装置 | |
CN110484895A (zh) | 腔室组件及反应腔室 | |
US20030037879A1 (en) | Top gas feed lid for semiconductor processing chamber | |
CN106937474A (zh) | 一种电感耦合等离子处理器 | |
JPS62180077A (ja) | 管内面の被覆方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1134166 Country of ref document: HK |
|
ASS | Succession or assignment of patent right |
Owner name: HUOHELAO MICRO SYSTEMS, INC. Free format text: FORMER OWNER: ROTH + RAU AG Effective date: 20100729 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20100729 Address after: Germany Horn Stein - Ernstthal Applicant after: Roth & Rau AG Address before: Germany Horn Stein - Ernstthal Applicant before: Roth & Rau AG |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1134166 Country of ref document: HK |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120620 Termination date: 20200808 |