JP2001511311A - フォトリソグラフィに使用するための極紫外線を生成するための方法と装置 - Google Patents

フォトリソグラフィに使用するための極紫外線を生成するための方法と装置

Info

Publication number
JP2001511311A
JP2001511311A JP53287998A JP53287998A JP2001511311A JP 2001511311 A JP2001511311 A JP 2001511311A JP 53287998 A JP53287998 A JP 53287998A JP 53287998 A JP53287998 A JP 53287998A JP 2001511311 A JP2001511311 A JP 2001511311A
Authority
JP
Japan
Prior art keywords
gas
extreme ultraviolet
diffuser
nozzle
jet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP53287998A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001511311A5 (enExample
Inventor
ガトウスキ，ラバト、エム
カラ，ヴィンサント、エス
タッド，アラン、エム
Original Assignee
アドヴァンスド、エナジ、システィムズ、インク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アドヴァンスド、エナジ、システィムズ、インク filed Critical アドヴァンスド、エナジ、システィムズ、インク
Publication of JP2001511311A publication Critical patent/JP2001511311A/ja
Publication of JP2001511311A5 publication Critical patent/JP2001511311A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0023—Constructional details of the ejection system

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP53287998A 1997-02-04 1997-12-23 フォトリソグラフィに使用するための極紫外線を生成するための方法と装置 Ceased JP2001511311A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/794,802 1997-02-04
US08/794,802 US6133577A (en) 1997-02-04 1997-02-04 Method and apparatus for producing extreme ultra-violet light for use in photolithography
PCT/US1997/023915 WO1998034234A1 (en) 1997-02-04 1997-12-23 Method and apparatus for producing extreme ultra-violet light for use in photolithography

Publications (2)

Publication Number Publication Date
JP2001511311A true JP2001511311A (ja) 2001-08-07
JP2001511311A5 JP2001511311A5 (enExample) 2005-08-11

Family

ID=25163724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53287998A Ceased JP2001511311A (ja) 1997-02-04 1997-12-23 フォトリソグラフィに使用するための極紫外線を生成するための方法と装置

Country Status (5)

Country Link
US (1) US6133577A (enExample)
EP (1) EP1016092B1 (enExample)
JP (1) JP2001511311A (enExample)
DE (1) DE69729588T2 (enExample)
WO (1) WO1998034234A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7087911B2 (en) 2002-11-21 2006-08-08 Asml Holding N.V. Method for recycling gases used in a lithography tool
US7135693B2 (en) 2003-03-20 2006-11-14 Asml Holding N.V. Method and apparatus for recycling gases used in a lithography tool
JP2010538420A (ja) * 2007-08-31 2010-12-09 サイマー インコーポレイテッド レーザ生成プラズマｅｕｖ光源のためのガス管理システム
WO2011027717A1 (ja) * 2009-09-01 2011-03-10 株式会社Ihi Ｌｐｐ方式のｅｕｖ光源とその発生方法
JP2011054403A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
JP2011054402A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
US8648536B2 (en) 2009-09-01 2014-02-11 Ihi Corporation Plasma light source

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999051357A1 (en) * 1998-04-03 1999-10-14 Advanced Energy Systems, Inc. Energy emission system for photolithography
US6065203A (en) * 1998-04-03 2000-05-23 Advanced Energy Systems, Inc. Method of manufacturing very small diameter deep passages
US6194733B1 (en) 1998-04-03 2001-02-27 Advanced Energy Systems, Inc. Method and apparatus for adjustably supporting a light source for use in photolithography
US6105885A (en) 1998-04-03 2000-08-22 Advanced Energy Systems, Inc. Fluid nozzle system and method in an emitted energy system for photolithography
AU3469999A (en) * 1998-04-03 1999-10-25 Advanced Energy Systems, Inc. Fluid nozzle system, energy emission system for photolithography and its method of manufacture
AU3466899A (en) * 1998-04-03 1999-10-25 Advanced Energy Systems, Inc. Diffuser system and energy emission system for photolithography
US6190835B1 (en) * 1999-05-06 2001-02-20 Advanced Energy Systems, Inc. System and method for providing a lithographic light source for a semiconductor manufacturing process
WO2001007967A1 (en) 1999-07-22 2001-02-01 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method and mask devices
US6304630B1 (en) * 1999-12-24 2001-10-16 U.S. Philips Corporation Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit
JP2004507873A (ja) * 2000-08-31 2004-03-11 パワーレイズ・リミテッド レーザ発生されたプラズマを使用する電磁放射発生
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
GB0111204D0 (en) * 2001-05-08 2001-06-27 Mertek Ltd High flux,high energy photon source
US6744851B2 (en) 2002-05-31 2004-06-01 Northrop Grumman Corporation Linear filament array sheet for EUV production
DE10306668B4 (de) * 2003-02-13 2009-12-10 Xtreme Technologies Gmbh Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Plasmas
DE10326279A1 (de) * 2003-06-11 2005-01-05 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Plasma-basierte Erzeugung von Röntgenstrahlung mit einem schichtförmigen Targetmaterial
US7154931B2 (en) 2004-06-22 2006-12-26 Ksy Corporation Laser with Brayton cycle outlet pump
US7469710B1 (en) 2004-06-22 2008-12-30 Ksy Corporation Supersonic diffuser
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
WO2013156041A1 (en) * 2012-04-18 2013-10-24 Carl Zeiss Smt Gmbh A microlithographic apparatus and a method of changing an optical wavefront in an objective of such an apparatus
US20140166051A1 (en) * 2012-12-17 2014-06-19 Kla-Tencor Corporation Apparatus, system, and method for separating gases and mitigating debris in a controlled pressure environment
US9585236B2 (en) 2013-05-03 2017-02-28 Media Lario Srl Sn vapor EUV LLP source system for EUV lithography
WO2017030948A1 (en) * 2015-08-19 2017-02-23 The Regents Of The University Of California Shock injector for low-laser energy electron injection in a laser plasma accelerator
WO2025153242A1 (en) * 2024-01-17 2025-07-24 Asml Netherlands B.V. Method and device for tuning flow velocity profile

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE632088A (enExample) * 1962-05-09
US3686528A (en) * 1969-12-05 1972-08-22 Tamarack Scient Co Inc Jet pinched plasma arc lamp and method of forming plasma arc
DE2020055A1 (de) * 1970-04-24 1971-12-02 Mueller Ernst Kg Verfahren und Vorrichtung zum UEberziehen von Gegenstaenden mit pulverfoermigen Stoffen
US3904985A (en) * 1971-12-21 1975-09-09 Us Energy Explosive laser
US3876149A (en) * 1973-04-26 1975-04-08 William J Futerko Method of forming a torch tip and torch tips
US3972474A (en) * 1974-11-01 1976-08-03 A. B. Dick Company Miniature ink jet nozzle
US4161280A (en) * 1977-10-13 1979-07-17 State Of Connecticut Method and apparatus for dispensing a deicer liquid
US4178078A (en) * 1978-09-19 1979-12-11 United Technologies Corporation Aerodynamic window
US4455470A (en) * 1981-08-14 1984-06-19 The Perkin-Elmer Corporation Plasma spray gun nozzle and coolant deionizer
US4408338A (en) * 1981-12-31 1983-10-04 International Business Machines Corporation Pulsed electromagnetic radiation source having a barrier for discharged debris
US4584479A (en) * 1982-10-19 1986-04-22 Varian Associates, Inc. Envelope apparatus for localized vacuum processing
US4607167A (en) * 1982-10-19 1986-08-19 Varian Associates, Inc. Charged particle beam lithography machine incorporating localized vacuum envelope
US4549082A (en) * 1983-04-19 1985-10-22 Mcmillan Michael R Synthetic plasma ion source
US4560880A (en) * 1983-09-19 1985-12-24 Varian Associates, Inc. Apparatus for positioning a workpiece in a localized vacuum processing system
US4577122A (en) * 1983-12-28 1986-03-18 The Regents Of The University Of California Method and apparatus for generation of coherent VUV and XUV radiation
US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
US4820927A (en) * 1985-06-28 1989-04-11 Control Data Corporation Electron beam source employing a photo-emitter cathode
LU86322A1 (fr) * 1986-02-25 1987-09-10 Arbed Lance de soufflage d'oxygene
US5204506A (en) * 1987-12-07 1993-04-20 The Regents Of The University Of California Plasma pinch surface treating apparatus and method of using same
US4830280A (en) * 1988-03-21 1989-05-16 Yankoff Gerald K Nozzle
JPH0637521Y2 (ja) * 1988-10-05 1994-09-28 高橋 柾弘 マイクロ波励起による紫外線発生装置
US5298835A (en) * 1988-07-21 1994-03-29 Electro-Plasma, Inc. Modular segmented cathode plasma generator
US5012853A (en) * 1988-09-20 1991-05-07 Sundstrand Corporation Process for making articles with smooth complex internal geometries
US4982067A (en) * 1988-11-04 1991-01-01 Marantz Daniel Richard Plasma generating apparatus and method
US5012105A (en) * 1989-02-02 1991-04-30 Nippon Seiko Kabushiki Kaisha Multiple-imaging charged particle-beam exposure system
US5103102A (en) * 1989-02-24 1992-04-07 Micrion Corporation Localized vacuum apparatus and method
US4954715A (en) * 1989-06-26 1990-09-04 Zoeld Tibor Method and apparatus for an optimized multiparameter flow-through particle and cell analyzer
US4980563A (en) * 1990-01-09 1990-12-25 United States Department Of Energy VUV lithography
DE69113332T2 (de) * 1990-06-22 1996-03-14 Toshiba Kawasaki Kk Vakuum-Ultraviolettlichtquelle.
JP2619565B2 (ja) * 1990-11-05 1997-06-11 株式会社日立製作所 電子ビーム描画装置
WO1994013010A1 (en) * 1991-04-15 1994-06-09 Fei Company Process of shaping features of semiconductor devices
US5175929A (en) * 1992-03-04 1993-01-05 General Electric Company Method for producing articles by chemical vapor deposition
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US5577091A (en) * 1994-04-01 1996-11-19 University Of Central Florida Water laser plasma x-ray point sources
US5499282A (en) * 1994-05-02 1996-03-12 University Of Central Florida Efficient narrow spectral width soft-X-ray discharge sources
US5577092A (en) * 1995-01-25 1996-11-19 Kublak; Glenn D. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources
US5644137A (en) * 1996-03-04 1997-07-01 Waggener; Herbert A. Stabilizing support mechanism for electron beam apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7087911B2 (en) 2002-11-21 2006-08-08 Asml Holding N.V. Method for recycling gases used in a lithography tool
US7135693B2 (en) 2003-03-20 2006-11-14 Asml Holding N.V. Method and apparatus for recycling gases used in a lithography tool
JP2010538420A (ja) * 2007-08-31 2010-12-09 サイマー インコーポレイテッド レーザ生成プラズマｅｕｖ光源のためのガス管理システム
WO2011027717A1 (ja) * 2009-09-01 2011-03-10 株式会社Ihi Ｌｐｐ方式のｅｕｖ光源とその発生方法
JP2011054403A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
JP2011054376A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
JP2011054402A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
KR101357231B1 (ko) * 2009-09-01 2014-01-29 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 Ｌｐｐ 방식의 ｅｕｖ 광원과 그 발생 방법
US8648536B2 (en) 2009-09-01 2014-02-11 Ihi Corporation Plasma light source
US9000402B2 (en) 2009-09-01 2015-04-07 Ihi Corporation LPP EUV light source and method for producing the same

Also Published As

Publication number Publication date
EP1016092B1 (en) 2004-06-16
DE69729588D1 (de) 2004-07-22
US6133577A (en) 2000-10-17
EP1016092A1 (en) 2000-07-05
WO1998034234A1 (en) 1998-08-06
DE69729588T2 (de) 2005-06-23
EP1016092A4 (en) 2001-11-14

Similar Documents

Publication Publication Date Title
JP2001511311A (ja) フォトリソグラフィに使用するための極紫外線を生成するための方法と装置
US6714624B2 (en) Discharge source with gas curtain for protecting optics from particles
US6493423B1 (en) Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit
US4692934A (en) X-ray lithography system
US6452194B2 (en) Radiation source for use in lithographic projection apparatus
JP2004533704A (ja) 特にリソグラフィのための極短紫外の光を生成するための方法及び装置
JP4195071B2 (ja) 平版投影装置用の照射源
US6538257B2 (en) Method of generating extremely short-wave radiation, and extremely short-wave radiation source unit
JPH10221499A (ja) レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
US6552350B2 (en) System and method for providing a lithographic light source for a semiconductor manufacturing process
US4771447A (en) X-ray source
JP4690686B2 (ja) Ｅｕｖ源
JPS61158656A (ja) Ｘ線装置に使用する濾過装置および方法
TW201130386A (en) EUV light source by LPP and generating method thereof
JP2005108834A5 (enExample)
US6353232B2 (en) Holder assembly system and method in an emitted energy system for photolithography
US6194733B1 (en) Method and apparatus for adjustably supporting a light source for use in photolithography
WO1999051357A1 (en) Energy emission system for photolithography
US6437349B1 (en) Fluid nozzle system and method in an emitted energy system for photolithography
JPH11345698A (ja) レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
JP2002510874A (ja) フォトリソグラフィのための流体ノズルシステム、エネルギー放射システム及びその製造方法
Parra et al. Laser heating of noble gas droplet sprays: EUV source efficiency considerations
WO1999051355A1 (en) Diffuser system and energy emission system for photolithography

Legal Events

Date Code Title Description
A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20041221

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060207

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20060427

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20060619

A313 Final decision of rejection without a dissenting response from the applicant

Free format text: JAPANESE INTERMEDIATE CODE: A313

Effective date: 20060925

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20061031