JP2001510434A - シリコン保護層を備えた溶融ポット、シリコン保護層を適用する方法及びその使用 - Google Patents

シリコン保護層を備えた溶融ポット、シリコン保護層を適用する方法及びその使用

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Publication number
JP2001510434A
JP2001510434A JP53368798A JP53368798A JP2001510434A JP 2001510434 A JP2001510434 A JP 2001510434A JP 53368798 A JP53368798 A JP 53368798A JP 53368798 A JP53368798 A JP 53368798A JP 2001510434 A JP2001510434 A JP 2001510434A
Authority
JP
Japan
Prior art keywords
silicon
silicon nitride
protective layer
content
pot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP53368798A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001510434A5 (enExample
Inventor
ランゲ，ホルスト
クルンベ，ボルフガング
ガツツバイラー，ハインツ
Original Assignee
バイエル・アクチエンゲゼルシヤフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7819403&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2001510434(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by バイエル・アクチエンゲゼルシヤフト filed Critical バイエル・アクチエンゲゼルシヤフト
Publication of JP2001510434A publication Critical patent/JP2001510434A/ja
Publication of JP2001510434A5 publication Critical patent/JP2001510434A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP53368798A 1997-02-06 1998-01-22 シリコン保護層を備えた溶融ポット、シリコン保護層を適用する方法及びその使用 Pending JP2001510434A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19704371 1997-02-06
DE19704371.2 1997-02-06
PCT/EP1998/000333 WO1998035075A1 (de) 1997-02-06 1998-01-22 Mit siliciumschutzschichten versehene schmelztiegel, ein verfahren zum aufbringen der siliciumschutzschicht und deren verwendung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009184298A Division JP2009298693A (ja) 1997-02-06 2009-08-07 シリコン保護層を備えた溶融ポット、シリコン保護層を適用する方法及びその使用

Publications (2)

Publication Number Publication Date
JP2001510434A true JP2001510434A (ja) 2001-07-31
JP2001510434A5 JP2001510434A5 (enExample) 2005-06-16

Family

ID=7819403

Family Applications (2)

Application Number Title Priority Date Filing Date
JP53368798A Pending JP2001510434A (ja) 1997-02-06 1998-01-22 シリコン保護層を備えた溶融ポット、シリコン保護層を適用する方法及びその使用
JP2009184298A Pending JP2009298693A (ja) 1997-02-06 2009-08-07 シリコン保護層を備えた溶融ポット、シリコン保護層を適用する方法及びその使用

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009184298A Pending JP2009298693A (ja) 1997-02-06 2009-08-07 シリコン保護層を備えた溶融ポット、シリコン保護層を適用する方法及びその使用

Country Status (6)

Country Link
US (1) US6165425A (enExample)
EP (1) EP0963464B1 (enExample)
JP (2) JP2001510434A (enExample)
DE (1) DE59801041D1 (enExample)
NO (1) NO321946B1 (enExample)
WO (1) WO1998035075A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535552A (ja) * 2002-08-15 2005-11-24 クルジン アクシエル スカプ 窒化ケイ素の成形部品及び該成形部品の製造方法
JP2007146132A (ja) * 2005-10-21 2007-06-14 Esk Ceramics Gmbh & Co Kg 窒化ケイ素を含有する耐久性ハードコーティング
JP2008230932A (ja) * 2007-03-23 2008-10-02 Covalent Materials Corp シリコン鋳造用鋳型およびその製造方法
JP2009510387A (ja) * 2005-10-06 2009-03-12 ベスビウス クルーシブル カンパニー ケイ素の結晶化用の坩堝およびその製造方法
EP2116637A2 (en) 2008-05-07 2009-11-11 Covalent Materials Corporation Crucible for melting silicon and release agent used to the same
JP2009541193A (ja) * 2006-06-23 2009-11-26 アール・イー・シー・スキャンウェハー・アー・エス 半導体級シリコンを生産するための装置および方法
WO2012090542A1 (ja) * 2010-12-28 2012-07-05 宇部興産株式会社 多結晶シリコンインゴット鋳造用鋳型及びその製造方法並びに多結晶シリコンインゴット鋳造用鋳型の離型材用窒化珪素粉末及びそれを含有したスラリー
JP2013071864A (ja) * 2011-09-28 2013-04-22 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末およびその製造方法
JP2013151386A (ja) * 2012-01-25 2013-08-08 Kyodo Fine Ceramics Co Ltd ポリシリコンインゴット鋳造用鋳型、ポリシリコンインゴット鋳造用鋳型の製造方法、及びポリシリコンインゴット製造方法
WO2018198488A1 (ja) * 2017-04-27 2018-11-01 株式会社Sumco シリコン単結晶の引上げ方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
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AU2002230671A1 (en) * 2000-11-15 2002-05-27 Gt Equipment Technologies Inc. Improved crucible coating system
US6491971B2 (en) * 2000-11-15 2002-12-10 G.T. Equipment Technologies, Inc Release coating system for crucibles
US20040187767A1 (en) * 2002-10-24 2004-09-30 Intel Corporation Device and method for multicrystalline silicon wafers
UA81278C2 (en) * 2002-12-06 2007-12-25 Vessel for holding a silicon and method for its making
ES2214139B2 (es) * 2003-02-21 2005-03-16 Universidade De Santiago De Compostela Procedimiento de obtencion de recubrimientos superficiales de nitruro de silicio sobre piezas y componentes ceramicos.
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
CN100372059C (zh) * 2003-12-24 2008-02-27 上海宏力半导体制造有限公司 形成半导体材料晶片的方法及其结构
DE102005028435B4 (de) * 2004-06-30 2011-05-12 Deutsche Solar Ag Kokille mit Antihaftbeschichtung ihr Herstellungsverfahren und ihre Verwendung
WO2006002779A1 (de) * 2004-06-30 2006-01-12 Deutsche Solar Ag Herstellungsverfahren für kokille mit antihaftbeschichtung
WO2006005416A1 (de) * 2004-07-08 2006-01-19 Deutsche Solar Ag Herstellungsverfahren für kokille mit antihaftbeschichtung
DE102005029039B4 (de) * 2004-07-08 2012-07-12 Deutsche Solar Gmbh Herstellungsverfahren für Kokille mit Antihaftbeschichtung
US7540919B2 (en) * 2005-04-01 2009-06-02 Gt Solar Incorporated Solidification of crystalline silicon from reusable crucible molds
US7572334B2 (en) 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
DE102006003819A1 (de) * 2006-01-26 2007-08-02 Wacker Chemie Ag Keramischer Formkörper mit hochreiner Si3N4-Beschichtung, Verfahren zu seiner Herstellung und Verwendung
NO327122B1 (no) 2007-03-26 2009-04-27 Elkem Solar As Beleggingssystem
DE102007053284A1 (de) 2007-11-08 2009-05-20 Esk Ceramics Gmbh & Co. Kg Fest haftende siliciumnitridhaltige Trennschicht
WO2009118199A1 (de) * 2008-03-28 2009-10-01 Schott Ag Verfahren zur thermographischen prüfung nichtmetallischer werkstoffe, insbesondere beschichteter nichtmetallischer werkstoffe, sowie verfahren zu deren herstellung und verfahrensgemäss hergestellter körper
DE102008031766A1 (de) 2008-07-04 2009-10-15 Schott Ag Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels
CN101433890B (zh) * 2008-12-05 2010-12-29 江阴海润太阳能电力有限公司 低压下在石英坩埚内壁上喷涂氮化硅涂层的方法及装置
DE102009048741A1 (de) 2009-03-20 2010-09-30 Access E.V. Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils
US20110177284A1 (en) * 2009-07-16 2011-07-21 Memc Singapore Pte Ltd. Silicon wafers and ingots with reduced oxygen content and methods for producing them
CN101845666B (zh) * 2010-06-03 2013-08-28 王敬 一种掺氮晶体硅及其制备方法
MY165455A (en) 2011-08-31 2018-03-22 3M Innovative Properties Co Silicon-nitride-containing separating layer having high hardness
US8747538B2 (en) * 2011-09-20 2014-06-10 Chung-Hou Tony Hsiao Photovoltaic ingot mold release
WO2013160236A1 (en) * 2012-04-24 2013-10-31 Saint-Gobain Ceramic Materials A. S. Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible
DE102013206993B4 (de) * 2013-04-18 2014-12-04 Morgan Advanced Materials Haldenwanger GmbH Verfahren zur Beschichtung von Formkörpern aus Quarzgut
CN103288357B (zh) * 2013-06-20 2016-03-30 天津英利新能源有限公司 氮化硅溶液及其制备方法、多晶硅铸锭用坩埚及其制备方法
AU2018262560B2 (en) * 2017-05-01 2020-05-28 Tritone Technologies Ltd. Molding method and apparatus, particularly applicable to metal and/or ceramics
CN221730280U (zh) * 2023-05-30 2024-09-20 深圳天珑无线科技有限公司 不沾黏塑胶容器
CN118109895B (zh) * 2024-04-30 2024-08-13 安徽壹石通材料科技股份有限公司 一种氮化硅/熔融石英复合坩埚及其制备方法与应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4515755A (en) * 1981-05-11 1985-05-07 Toshiba Ceramics Co., Ltd. Apparatus for producing a silicon single crystal from a silicon melt
DE3536933A1 (de) * 1985-10-17 1987-04-23 Bayer Ag Verbessertes siliciumnitrid und verfahren zu dessen herstellung
US5431869A (en) * 1993-01-12 1995-07-11 Council Of Scientific & Industrial Research Process for the preparation of polycrystalline silicon ingot
JP2615437B2 (ja) * 1994-09-20 1997-05-28 工業技術院長 高強度・高靱性窒化ケイ素焼結体及びその製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535552A (ja) * 2002-08-15 2005-11-24 クルジン アクシエル スカプ 窒化ケイ素の成形部品及び該成形部品の製造方法
JP2009510387A (ja) * 2005-10-06 2009-03-12 ベスビウス クルーシブル カンパニー ケイ素の結晶化用の坩堝およびその製造方法
JP2007146132A (ja) * 2005-10-21 2007-06-14 Esk Ceramics Gmbh & Co Kg 窒化ケイ素を含有する耐久性ハードコーティング
JP2009541193A (ja) * 2006-06-23 2009-11-26 アール・イー・シー・スキャンウェハー・アー・エス 半導体級シリコンを生産するための装置および方法
JP2008230932A (ja) * 2007-03-23 2008-10-02 Covalent Materials Corp シリコン鋳造用鋳型およびその製造方法
EP2116637A2 (en) 2008-05-07 2009-11-11 Covalent Materials Corporation Crucible for melting silicon and release agent used to the same
WO2012090542A1 (ja) * 2010-12-28 2012-07-05 宇部興産株式会社 多結晶シリコンインゴット鋳造用鋳型及びその製造方法並びに多結晶シリコンインゴット鋳造用鋳型の離型材用窒化珪素粉末及びそれを含有したスラリー
CN103347814A (zh) * 2010-12-28 2013-10-09 宇部兴产株式会社 多晶硅铸锭铸造用铸模及其制造方法、以及多晶硅铸锭铸造用铸模的脱模材料用氮化硅粉末及含有该粉末的浆料
US8973888B2 (en) 2010-12-28 2015-03-10 Ube Industries, Ltd. Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same
CN103347814B (zh) * 2010-12-28 2015-07-15 宇部兴产株式会社 多晶硅铸锭铸造用铸模及其制造方法、以及多晶硅铸锭铸造用铸模的脱模材料用氮化硅粉末及含有该粉末的浆料
JP2013071864A (ja) * 2011-09-28 2013-04-22 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末およびその製造方法
JP2013151386A (ja) * 2012-01-25 2013-08-08 Kyodo Fine Ceramics Co Ltd ポリシリコンインゴット鋳造用鋳型、ポリシリコンインゴット鋳造用鋳型の製造方法、及びポリシリコンインゴット製造方法
WO2018198488A1 (ja) * 2017-04-27 2018-11-01 株式会社Sumco シリコン単結晶の引上げ方法
JP2018184326A (ja) * 2017-04-27 2018-11-22 株式会社Sumco シリコン単結晶の引上げ方法
US11319643B2 (en) 2017-04-27 2022-05-03 Sumco Corporation Method for pulling up silicon monocrystal

Also Published As

Publication number Publication date
NO321946B1 (no) 2006-07-24
WO1998035075A1 (de) 1998-08-13
EP0963464B1 (de) 2001-07-18
NO993466L (no) 1999-07-14
JP2009298693A (ja) 2009-12-24
DE59801041D1 (de) 2001-08-23
NO993466D0 (no) 1999-07-14
EP0963464A1 (de) 1999-12-15
US6165425A (en) 2000-12-26

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