JP2001505955A5 - - Google Patents

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Publication number
JP2001505955A5
JP2001505955A5 JP1998526181A JP52618198A JP2001505955A5 JP 2001505955 A5 JP2001505955 A5 JP 2001505955A5 JP 1998526181 A JP1998526181 A JP 1998526181A JP 52618198 A JP52618198 A JP 52618198A JP 2001505955 A5 JP2001505955 A5 JP 2001505955A5
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JP
Japan
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JP1998526181A
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JP2001505955A (ja
JP4221064B2 (ja
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Priority claimed from DE19653681A external-priority patent/DE19653681C2/de
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Publication of JP2001505955A5 publication Critical patent/JP2001505955A5/ja
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Publication of JP4221064B2 publication Critical patent/JP4221064B2/ja
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Figure 2001505955
Figure 2001505955
Figure 2001505955
JP52618198A 1996-12-13 1997-12-04 銅層の電解析出方法 Expired - Lifetime JP4221064B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19653681A DE19653681C2 (de) 1996-12-13 1996-12-13 Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens
DE19653681.2 1996-12-13
PCT/EP1997/006786 WO1998026114A1 (de) 1996-12-13 1997-12-04 Verfahren zur elektrolytischen abscheidung von kupferschichten

Publications (3)

Publication Number Publication Date
JP2001505955A JP2001505955A (ja) 2001-05-08
JP2001505955A5 true JP2001505955A5 (ja) 2005-05-12
JP4221064B2 JP4221064B2 (ja) 2009-02-12

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ID=7815786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52618198A Expired - Lifetime JP4221064B2 (ja) 1996-12-13 1997-12-04 銅層の電解析出方法

Country Status (8)

Country Link
US (1) US6129830A (ja)
EP (1) EP0944749B1 (ja)
JP (1) JP4221064B2 (ja)
KR (1) KR100546989B1 (ja)
AT (1) ATE204035T1 (ja)
CA (1) CA2275214C (ja)
DE (2) DE19653681C2 (ja)
WO (1) WO1998026114A1 (ja)

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DE19915146C1 (de) * 1999-01-21 2000-07-06 Atotech Deutschland Gmbh Verfahren zum galvanischen Bilden von Leiterstrukturen aus hochreinem Kupfer bei der Herstellung von integrierten Schaltungen
JP4394234B2 (ja) * 2000-01-20 2010-01-06 日鉱金属株式会社 銅電気めっき液及び銅電気めっき方法
US6503375B1 (en) * 2000-02-11 2003-01-07 Applied Materials, Inc Electroplating apparatus using a perforated phosphorus doped consumable anode
JP2001267726A (ja) * 2000-03-22 2001-09-28 Toyota Autom Loom Works Ltd 配線基板の電解メッキ方法及び配線基板の電解メッキ装置
US6491806B1 (en) * 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
US6776893B1 (en) * 2000-11-20 2004-08-17 Enthone Inc. Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
JP4806498B2 (ja) * 2001-08-01 2011-11-02 凸版印刷株式会社 プリント配線基板の製造装置および製造方法
EP1310582A1 (en) * 2001-11-07 2003-05-14 Shipley Company LLC Process for electrolytic copper plating
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
DE10259362A1 (de) * 2002-12-18 2004-07-08 Siemens Ag Verfahren zum Abscheiden einer Legierung auf ein Substrat
KR20040073974A (ko) * 2003-02-14 2004-08-21 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 전기도금 조성물
DE602005022650D1 (de) * 2004-04-26 2010-09-16 Rohm & Haas Elect Mat Verbessertes Plattierungsverfahren
TW200632147A (ja) * 2004-11-12 2006-09-16
EP1717351A1 (de) * 2005-04-27 2006-11-02 Enthone Inc. Galvanikbad
US20070158199A1 (en) * 2005-12-30 2007-07-12 Haight Scott M Method to modulate the surface roughness of a plated deposit and create fine-grained flat bumps
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
US8784634B2 (en) 2006-03-30 2014-07-22 Atotech Deutschland Gmbh Electrolytic method for filling holes and cavities with metals
US7887693B2 (en) * 2007-06-22 2011-02-15 Maria Nikolova Acid copper electroplating bath composition
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
JP2009167506A (ja) * 2008-01-21 2009-07-30 Ebara Udylite Kk 酸性電解銅めっき液およびこれを用いる微細配線回路の作製方法
DE102008031003B4 (de) 2008-06-30 2010-04-15 Siemens Aktiengesellschaft Verfahren zum Erzeugen einer CNT enthaltenen Schicht aus einer ionischen Flüssigkeit
US20100206737A1 (en) * 2009-02-17 2010-08-19 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv)
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
EP2392694A1 (en) * 2010-06-02 2011-12-07 ATOTECH Deutschland GmbH Method for etching of copper and copper alloys
EP2518187A1 (en) 2011-04-26 2012-10-31 Atotech Deutschland GmbH Aqueous acidic bath for electrolytic deposition of copper
PL2620529T3 (pl) * 2012-01-25 2014-09-30 Atotech Deutschland Gmbh Sposób wytwarzania matowych warstw miedzianych
JP6216522B2 (ja) * 2013-03-14 2017-10-18 大日本印刷株式会社 インターポーザー基板の製造方法。
US10494732B2 (en) 2016-05-19 2019-12-03 Atotech Deutschland Gmbh Method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath and controlled process for plating
JP6909582B2 (ja) * 2017-01-18 2021-07-28 株式会社Ｊｃｕ 着色用めっき液および着色方法
KR20210062369A (ko) * 2019-11-21 2021-05-31 에스케이넥실리스 주식회사 찢김 또는 주름 불량을 방지할 수 있는 전해동박, 그것을 포함하는 전극, 그것을 포함하는 이차전지, 및 그것의 제조방법
TW202342827A (zh) * 2022-03-31 2023-11-01 日商奧野製藥工業股份有限公司 Pr脈衝電解用銅鍍敷液、及利用pr脈衝電解法之銅鍍敷方法

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GB662217A (en) * 1948-10-13 1951-12-05 Westinghouse Electric Int Co Improvements in or relating to the electrodeposition of copper
DD215589B5 (de) * 1983-05-11 1994-06-01 Heinz Dr Rer Nat Liebscher Verfahren zur elektrolytischen Metallabscheidung bei erzwungener Konvektion
DD261613A1 (de) * 1987-06-05 1988-11-02 Leipzig Galvanotechnik Verfahren zur elektrolytischen kupferabscheidung aus sauren elektrolyten mit dimensionsstabiler anode
GB8801827D0 (en) * 1988-01-27 1988-02-24 Jct Controls Ltd Improvements in electrochemical processes
CN1045770A (zh) * 1989-03-18 1990-10-03 王英 用膜法蒸馏技术分离浓缩醋酸铵与氢氧化铵的系统
GB8913561D0 (en) * 1989-06-13 1989-08-02 Learonal Uk Plc Method of stabilising an organic additive in an electroplating solution
DE4344387C2 (de) * 1993-12-24 1996-09-05 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens
JP2866300B2 (ja) * 1994-03-07 1999-03-08 生物系特定産業技術研究推進機構 運搬作業車
JPH0967693A (ja) * 1995-08-29 1997-03-11 Nikko Gould Foil Kk 電解銅箔の製造方法

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