JP2001345324A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2001345324A
JP2001345324A JP2000163046A JP2000163046A JP2001345324A JP 2001345324 A JP2001345324 A JP 2001345324A JP 2000163046 A JP2000163046 A JP 2000163046A JP 2000163046 A JP2000163046 A JP 2000163046A JP 2001345324 A JP2001345324 A JP 2001345324A
Authority
JP
Japan
Prior art keywords
film
etching
hole
mechanical polishing
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2000163046A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001345324A5 (enExample
Inventor
Keiichi Sasaki
圭一 佐々木
Hisafumi Kaneko
尚史 金子
Nobuo Hayasaka
伸夫 早坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000163046A priority Critical patent/JP2001345324A/ja
Publication of JP2001345324A publication Critical patent/JP2001345324A/ja
Publication of JP2001345324A5 publication Critical patent/JP2001345324A5/ja
Abandoned legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2000163046A 2000-05-31 2000-05-31 半導体装置の製造方法 Abandoned JP2001345324A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000163046A JP2001345324A (ja) 2000-05-31 2000-05-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000163046A JP2001345324A (ja) 2000-05-31 2000-05-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001345324A true JP2001345324A (ja) 2001-12-14
JP2001345324A5 JP2001345324A5 (enExample) 2005-06-16

Family

ID=18666863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000163046A Abandoned JP2001345324A (ja) 2000-05-31 2000-05-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2001345324A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358142A (ja) * 2000-06-13 2001-12-26 Fujitsu Ltd 埋込配線層の形成方法及び噴流式スピンエッチング装置
KR100720489B1 (ko) * 2005-12-28 2007-05-22 동부일렉트로닉스 주식회사 구리 금속 배선의 평탄화 방법
JP2008021709A (ja) * 2006-07-11 2008-01-31 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2009266984A (ja) * 2008-04-24 2009-11-12 Spansion Llc 半導体装置の製造方法
JP5601380B2 (ja) * 2010-12-28 2014-10-08 富士通セミコンダクター株式会社 半導体装置の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358142A (ja) * 2000-06-13 2001-12-26 Fujitsu Ltd 埋込配線層の形成方法及び噴流式スピンエッチング装置
KR100720489B1 (ko) * 2005-12-28 2007-05-22 동부일렉트로닉스 주식회사 구리 금속 배선의 평탄화 방법
JP2008021709A (ja) * 2006-07-11 2008-01-31 Oki Electric Ind Co Ltd 半導体装置の製造方法
US7781334B2 (en) 2006-07-11 2010-08-24 Oki Semiconductor Co., Ltd. Method of manufacturing a semiconductor device with through-chip vias
JP2009266984A (ja) * 2008-04-24 2009-11-12 Spansion Llc 半導体装置の製造方法
JP5601380B2 (ja) * 2010-12-28 2014-10-08 富士通セミコンダクター株式会社 半導体装置の製造方法
US8916468B2 (en) 2010-12-28 2014-12-23 Fujitsu Semiconductor Limited Semiconductor device fabrication method

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