JP2001316871A - 液処理方法、及び液処理装置 - Google Patents
液処理方法、及び液処理装置Info
- Publication number
- JP2001316871A JP2001316871A JP2000174447A JP2000174447A JP2001316871A JP 2001316871 A JP2001316871 A JP 2001316871A JP 2000174447 A JP2000174447 A JP 2000174447A JP 2000174447 A JP2000174447 A JP 2000174447A JP 2001316871 A JP2001316871 A JP 2001316871A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- processing
- processed
- plating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 264
- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 238000012545 processing Methods 0.000 claims description 247
- 230000008569 process Effects 0.000 claims description 51
- 238000003672 processing method Methods 0.000 claims description 40
- 230000007246 mechanism Effects 0.000 claims description 34
- 230000003028 elevating effect Effects 0.000 claims description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 abstract description 263
- 235000012431 wafers Nutrition 0.000 description 197
- 238000004140 cleaning Methods 0.000 description 26
- 238000012546 transfer Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 5
- 239000006260 foam Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 101100493712 Caenorhabditis elegans bath-42 gene Proteins 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000174447A JP2001316871A (ja) | 2000-05-08 | 2000-05-08 | 液処理方法、及び液処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000174447A JP2001316871A (ja) | 2000-05-08 | 2000-05-08 | 液処理方法、及び液処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001316871A true JP2001316871A (ja) | 2001-11-16 |
| JP2001316871A5 JP2001316871A5 (enExample) | 2007-06-14 |
Family
ID=18676484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000174447A Pending JP2001316871A (ja) | 2000-05-08 | 2000-05-08 | 液処理方法、及び液処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001316871A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3490993B2 (ja) | 2001-10-29 | 2004-01-26 | アプライド マテリアルズ インコーポレイテッド | めっき方法 |
| JP2004513222A (ja) * | 2000-07-07 | 2004-04-30 | アプライド マテリアルズ インコーポレイテッド | 金属堆積のため挿入する際に基板を傾斜させる方法及び関連する装置 |
| WO2002029137A3 (en) * | 2000-10-03 | 2004-08-05 | Applied Materials Inc | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
| WO2004075266A3 (en) * | 2003-02-18 | 2004-11-11 | Applied Materials Inc | Method for immersing a substrate |
| CN118007221A (zh) * | 2024-04-10 | 2024-05-10 | 苏州智程半导体科技股份有限公司 | 一种晶圆水平电镀腔室 |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6280292A (ja) * | 1985-10-02 | 1987-04-13 | Hitachi Ltd | めつき方法及びその装置 |
| JPH02190476A (ja) * | 1989-01-17 | 1990-07-26 | Nec Corp | 噴流めっき装置 |
| JPH0299970U (enExample) * | 1989-01-20 | 1990-08-09 | ||
| JPH0522557U (ja) * | 1991-07-29 | 1993-03-23 | 山形日本電気株式会社 | 噴流式めつき装置 |
| JPH0637355U (ja) * | 1992-10-14 | 1994-05-17 | カシオ計算機株式会社 | ウエハ用メッキ装置 |
| JPH06140407A (ja) * | 1992-04-27 | 1994-05-20 | Nec Corp | めっき処理装置 |
| JPH07211719A (ja) * | 1994-01-12 | 1995-08-11 | Fujitsu Ltd | めっき方法 |
| JPH07335650A (ja) * | 1994-06-08 | 1995-12-22 | Keiichiro Suganuma | 半導体の製造方法 |
| JPH10204679A (ja) * | 1997-01-20 | 1998-08-04 | Electroplating Eng Of Japan Co | カップ式めっき装置 |
| JPH11209890A (ja) * | 1998-01-28 | 1999-08-03 | Electroplating Eng Of Japan Co | カップ式めっき方法及びそれに用いるカップ式めっき装置 |
| JPH11279797A (ja) * | 1998-03-27 | 1999-10-12 | Dainippon Screen Mfg Co Ltd | 基板メッキ装置 |
| JP2001049495A (ja) * | 1999-08-12 | 2001-02-20 | Ebara Corp | めっき装置及びめっき方法 |
-
2000
- 2000-05-08 JP JP2000174447A patent/JP2001316871A/ja active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6280292A (ja) * | 1985-10-02 | 1987-04-13 | Hitachi Ltd | めつき方法及びその装置 |
| JPH02190476A (ja) * | 1989-01-17 | 1990-07-26 | Nec Corp | 噴流めっき装置 |
| JPH0299970U (enExample) * | 1989-01-20 | 1990-08-09 | ||
| JPH0522557U (ja) * | 1991-07-29 | 1993-03-23 | 山形日本電気株式会社 | 噴流式めつき装置 |
| JPH06140407A (ja) * | 1992-04-27 | 1994-05-20 | Nec Corp | めっき処理装置 |
| JPH0637355U (ja) * | 1992-10-14 | 1994-05-17 | カシオ計算機株式会社 | ウエハ用メッキ装置 |
| JPH07211719A (ja) * | 1994-01-12 | 1995-08-11 | Fujitsu Ltd | めっき方法 |
| JPH07335650A (ja) * | 1994-06-08 | 1995-12-22 | Keiichiro Suganuma | 半導体の製造方法 |
| JPH10204679A (ja) * | 1997-01-20 | 1998-08-04 | Electroplating Eng Of Japan Co | カップ式めっき装置 |
| JPH11209890A (ja) * | 1998-01-28 | 1999-08-03 | Electroplating Eng Of Japan Co | カップ式めっき方法及びそれに用いるカップ式めっき装置 |
| JPH11279797A (ja) * | 1998-03-27 | 1999-10-12 | Dainippon Screen Mfg Co Ltd | 基板メッキ装置 |
| JP2001049495A (ja) * | 1999-08-12 | 2001-02-20 | Ebara Corp | めっき装置及びめっき方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004513222A (ja) * | 2000-07-07 | 2004-04-30 | アプライド マテリアルズ インコーポレイテッド | 金属堆積のため挿入する際に基板を傾斜させる方法及び関連する装置 |
| WO2002004711A3 (en) * | 2000-07-07 | 2004-05-06 | Applied Materials Inc | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
| WO2002029137A3 (en) * | 2000-10-03 | 2004-08-05 | Applied Materials Inc | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
| JP3490993B2 (ja) | 2001-10-29 | 2004-01-26 | アプライド マテリアルズ インコーポレイテッド | めっき方法 |
| WO2004075266A3 (en) * | 2003-02-18 | 2004-11-11 | Applied Materials Inc | Method for immersing a substrate |
| CN118007221A (zh) * | 2024-04-10 | 2024-05-10 | 苏州智程半导体科技股份有限公司 | 一种晶圆水平电镀腔室 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070426 |
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| A621 | Written request for application examination |
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