JP2001298073A - 静電チャックからワークピースをデチャックするための方法及び装置 - Google Patents

静電チャックからワークピースをデチャックするための方法及び装置

Info

Publication number
JP2001298073A
JP2001298073A JP2001013515A JP2001013515A JP2001298073A JP 2001298073 A JP2001298073 A JP 2001298073A JP 2001013515 A JP2001013515 A JP 2001013515A JP 2001013515 A JP2001013515 A JP 2001013515A JP 2001298073 A JP2001298073 A JP 2001298073A
Authority
JP
Japan
Prior art keywords
dechucking
residual
electrostatic chuck
signal
determining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001013515A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001298073A5 (enExample
Inventor
Karl F Leeser
エフ． レーザー カール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2001298073A publication Critical patent/JP2001298073A/ja
Publication of JP2001298073A5 publication Critical patent/JP2001298073A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • B23Q3/154—Stationary devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2001013515A 2000-01-21 2001-01-22 静電チャックからワークピースをデチャックするための方法及び装置 Pending JP2001298073A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/489458 2000-01-21
US09/489,458 US6307728B1 (en) 2000-01-21 2000-01-21 Method and apparatus for dechucking a workpiece from an electrostatic chuck

Publications (2)

Publication Number Publication Date
JP2001298073A true JP2001298073A (ja) 2001-10-26
JP2001298073A5 JP2001298073A5 (enExample) 2010-09-09

Family

ID=23943944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001013515A Pending JP2001298073A (ja) 2000-01-21 2001-01-22 静電チャックからワークピースをデチャックするための方法及び装置

Country Status (5)

Country Link
US (1) US6307728B1 (enExample)
EP (1) EP1118425A3 (enExample)
JP (1) JP2001298073A (enExample)
KR (1) KR100804842B1 (enExample)
TW (1) TW496809B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100653707B1 (ko) 2004-10-21 2006-12-04 삼성전자주식회사 플라즈마 처리장치의 플라즈마 처리방법
JP2012521652A (ja) * 2009-03-24 2012-09-13 ラム リサーチ コーポレーション デチャック時における電位スパイクを抑制する方法及び装置
JP2022155113A (ja) * 2021-03-30 2022-10-13 キヤノントッキ株式会社 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法

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US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US7218503B2 (en) * 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6403322B1 (en) * 2001-03-27 2002-06-11 Lam Research Corporation Acoustic detection of dechucking and apparatus therefor
US20040031699A1 (en) * 2002-08-19 2004-02-19 Applied Materials, Inc. Method for performing real time arcing detection
EP1475670B1 (en) * 2003-05-09 2008-10-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1475667A1 (en) 2003-05-09 2004-11-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7100954B2 (en) 2003-07-11 2006-09-05 Nexx Systems, Inc. Ultra-thin wafer handling system
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
US7583491B2 (en) * 2006-05-18 2009-09-01 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck to limit particle deposits thereon
KR100690136B1 (ko) * 2006-05-29 2007-03-08 우범제 정전척의 잔류 전하 제거 장치 및 제거 방법
TWM320179U (en) * 2006-06-09 2007-10-01 Gudeng Prec Industral Co Ltd Gas filling equipment and filling chamber therein for photomask conveying box
KR101394337B1 (ko) * 2006-08-30 2014-05-13 엘아이지에이디피 주식회사 정전척
US20080108154A1 (en) * 2006-11-03 2008-05-08 Hyoung Kyu Son Apparatus and method for measuring chuck attachment force
US7385799B1 (en) * 2007-02-07 2008-06-10 Axcelis Technology, Inc. Offset phase operation on a multiphase AC electrostatic clamp
US8149562B2 (en) * 2007-03-09 2012-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
CN101872733B (zh) * 2009-04-24 2012-06-27 中微半导体设备(上海)有限公司 感测和移除被加工半导体工艺件的残余电荷的系统和方法
KR20120073227A (ko) * 2009-09-10 2012-07-04 램 리써치 코포레이션 기판 위치 및 포텐셜에 대한 플라즈마 시그널링의 커플링에 기초한 플라즈마 디척킹 최적화를 위한 방법 및 장치
US20110060442A1 (en) * 2009-09-10 2011-03-10 Valcore Jr John C Methods and arrangement for detecting a wafer-released event within a plasma processing chamber
US8797705B2 (en) * 2009-09-10 2014-08-05 Lam Research Corporation Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
TWI493620B (zh) * 2010-06-29 2015-07-21 Global Unichip Corp 調整導線蝕刻機內的靜電吸盤電壓以釋放累積電荷
CA2847437C (en) * 2011-08-30 2017-03-14 Watlow Electric Manufacturing Company Thermal array system
CN104037045B (zh) * 2013-03-04 2016-05-11 中微半导体设备(上海)有限公司 测试基片去夹持终点的方法
WO2015192256A1 (en) 2014-06-17 2015-12-23 Evatec Ag Electro-static chuck with radiofrequency shunt
US10024825B2 (en) * 2014-12-26 2018-07-17 Axcelis Technologies, Inc. Wafer clamp detection based on vibration or acoustic characteristic analysis
US11114327B2 (en) 2017-08-29 2021-09-07 Applied Materials, Inc. ESC substrate support with chucking force control
US10732615B2 (en) 2017-10-30 2020-08-04 Varian Semiconductor Equipment Associates, Inc. System and method for minimizing backside workpiece damage
US10546731B1 (en) * 2018-10-05 2020-01-28 Applied Materials, Inc. Method, apparatus and system for wafer dechucking using dynamic voltage sweeping
KR20210090267A (ko) * 2018-12-20 2021-07-19 에이에스엠엘 네델란즈 비.브이. 정전식 클램프를 포함하는 오브젝트 테이블
KR102677038B1 (ko) 2020-05-22 2024-06-19 세메스 주식회사 정전 척과 그 제조 방법 및 기판 처리 장치
KR102677251B1 (ko) * 2021-10-28 2024-06-20 세메스 주식회사 기판 테스트 장치 및 이를 이용하는 디척킹 포스 측정 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS614611B2 (enExample) * 1981-12-26 1986-02-12 Fujitsu Ltd
JPH03169041A (ja) * 1989-11-29 1991-07-22 Japan Synthetic Rubber Co Ltd 真空処理装置
JPH05129421A (ja) * 1991-11-07 1993-05-25 Fujitsu Ltd 静電チヤツク
JPH0864664A (ja) * 1994-04-28 1996-03-08 Applied Materials Inc 静電チャックとウェハの間の残留静電力を無効にするチャック開放電圧を決定する方法
US5818682A (en) * 1996-08-13 1998-10-06 Applied Materials, Inc. Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck
JPH11330217A (ja) * 1998-05-12 1999-11-30 Ulvac Corp 静電チャックプレート表面からの基板離脱方法

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* Cited by examiner, † Cited by third party
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US5103367A (en) * 1987-05-06 1992-04-07 Unisearch Limited Electrostatic chuck using A.C. field excitation
US5684669A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
US5436790A (en) * 1993-01-15 1995-07-25 Eaton Corporation Wafer sensing and clamping monitor
US5444597A (en) * 1993-01-15 1995-08-22 Blake; Julian G. Wafer release method and apparatus
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
US5790365A (en) 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS614611B2 (enExample) * 1981-12-26 1986-02-12 Fujitsu Ltd
JPH03169041A (ja) * 1989-11-29 1991-07-22 Japan Synthetic Rubber Co Ltd 真空処理装置
JPH05129421A (ja) * 1991-11-07 1993-05-25 Fujitsu Ltd 静電チヤツク
JPH0864664A (ja) * 1994-04-28 1996-03-08 Applied Materials Inc 静電チャックとウェハの間の残留静電力を無効にするチャック開放電圧を決定する方法
US5818682A (en) * 1996-08-13 1998-10-06 Applied Materials, Inc. Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck
JPH11330217A (ja) * 1998-05-12 1999-11-30 Ulvac Corp 静電チャックプレート表面からの基板離脱方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100653707B1 (ko) 2004-10-21 2006-12-04 삼성전자주식회사 플라즈마 처리장치의 플라즈마 처리방법
JP2012521652A (ja) * 2009-03-24 2012-09-13 ラム リサーチ コーポレーション デチャック時における電位スパイクを抑制する方法及び装置
TWI502681B (zh) * 2009-03-24 2015-10-01 蘭姆研究公司 在解除夾持時用以降低電壓尖峰之方法及設備
JP2022155113A (ja) * 2021-03-30 2022-10-13 キヤノントッキ株式会社 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法
JP7419288B2 (ja) 2021-03-30 2024-01-22 キヤノントッキ株式会社 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法

Also Published As

Publication number Publication date
EP1118425A3 (en) 2004-02-04
KR100804842B1 (ko) 2008-02-20
TW496809B (en) 2002-08-01
EP1118425A2 (en) 2001-07-25
KR20010076392A (ko) 2001-08-11
US6307728B1 (en) 2001-10-23

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