TW496809B - Method and apparatus for dechucking a workpiece from an electrostatic chuck - Google Patents
Method and apparatus for dechucking a workpiece from an electrostatic chuck Download PDFInfo
- Publication number
- TW496809B TW496809B TW089127434A TW89127434A TW496809B TW 496809 B TW496809 B TW 496809B TW 089127434 A TW089127434 A TW 089127434A TW 89127434 A TW89127434 A TW 89127434A TW 496809 B TW496809 B TW 496809B
- Authority
- TW
- Taiwan
- Prior art keywords
- residual
- clamping
- workpiece
- patent application
- scope
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000008859 change Effects 0.000 claims description 9
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- 238000006386 neutralization reaction Methods 0.000 claims 2
- 230000003472 neutralizing effect Effects 0.000 claims 2
- 206010000234 Abortion spontaneous Diseases 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 208000015994 miscarriage Diseases 0.000 claims 1
- 208000000995 spontaneous abortion Diseases 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 8
- 238000009825 accumulation Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 35
- 230000008569 process Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- TZHYBRCGYCPGBQ-UHFFFAOYSA-N [B].[N] Chemical compound [B].[N] TZHYBRCGYCPGBQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
- B23Q3/154—Stationary devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/489,458 US6307728B1 (en) | 2000-01-21 | 2000-01-21 | Method and apparatus for dechucking a workpiece from an electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW496809B true TW496809B (en) | 2002-08-01 |
Family
ID=23943944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089127434A TW496809B (en) | 2000-01-21 | 2000-12-20 | Method and apparatus for dechucking a workpiece from an electrostatic chuck |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6307728B1 (enExample) |
| EP (1) | EP1118425A3 (enExample) |
| JP (1) | JP2001298073A (enExample) |
| KR (1) | KR100804842B1 (enExample) |
| TW (1) | TW496809B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI493620B (zh) * | 2010-06-29 | 2015-07-21 | Global Unichip Corp | 調整導線蝕刻機內的靜電吸盤電壓以釋放累積電荷 |
| CN111247631A (zh) * | 2017-10-30 | 2020-06-05 | 瓦里安半导体设备公司 | 减少背面工件损坏的系统以及方法 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6965506B2 (en) * | 1998-09-30 | 2005-11-15 | Lam Research Corporation | System and method for dechucking a workpiece from an electrostatic chuck |
| US7218503B2 (en) * | 1998-09-30 | 2007-05-15 | Lam Research Corporation | Method of determining the correct average bias compensation voltage during a plasma process |
| US6403322B1 (en) * | 2001-03-27 | 2002-06-11 | Lam Research Corporation | Acoustic detection of dechucking and apparatus therefor |
| US20040031699A1 (en) * | 2002-08-19 | 2004-02-19 | Applied Materials, Inc. | Method for performing real time arcing detection |
| EP1475667A1 (en) | 2003-05-09 | 2004-11-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1475670B1 (en) * | 2003-05-09 | 2008-10-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7100954B2 (en) | 2003-07-11 | 2006-09-05 | Nexx Systems, Inc. | Ultra-thin wafer handling system |
| KR100653707B1 (ko) | 2004-10-21 | 2006-12-04 | 삼성전자주식회사 | 플라즈마 처리장치의 플라즈마 처리방법 |
| US7292428B2 (en) * | 2005-04-26 | 2007-11-06 | Applied Materials, Inc. | Electrostatic chuck with smart lift-pin mechanism for a plasma reactor |
| US7583491B2 (en) * | 2006-05-18 | 2009-09-01 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck to limit particle deposits thereon |
| KR100690136B1 (ko) * | 2006-05-29 | 2007-03-08 | 우범제 | 정전척의 잔류 전하 제거 장치 및 제거 방법 |
| TWM320179U (en) * | 2006-06-09 | 2007-10-01 | Gudeng Prec Industral Co Ltd | Gas filling equipment and filling chamber therein for photomask conveying box |
| KR101394337B1 (ko) * | 2006-08-30 | 2014-05-13 | 엘아이지에이디피 주식회사 | 정전척 |
| US20080108154A1 (en) * | 2006-11-03 | 2008-05-08 | Hyoung Kyu Son | Apparatus and method for measuring chuck attachment force |
| US7385799B1 (en) * | 2007-02-07 | 2008-06-10 | Axcelis Technology, Inc. | Offset phase operation on a multiphase AC electrostatic clamp |
| US8149562B2 (en) * | 2007-03-09 | 2012-04-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System for decharging a wafer or substrate after dechucking from an electrostatic chuck |
| US8313612B2 (en) * | 2009-03-24 | 2012-11-20 | Lam Research Corporation | Method and apparatus for reduction of voltage potential spike during dechucking |
| CN101872733B (zh) * | 2009-04-24 | 2012-06-27 | 中微半导体设备(上海)有限公司 | 感测和移除被加工半导体工艺件的残余电荷的系统和方法 |
| SG178374A1 (en) * | 2009-09-10 | 2012-03-29 | Lam Res Corp | Methods and arrangement for detecting a wafer-released event within a plasma processing chamber |
| US20110060442A1 (en) * | 2009-09-10 | 2011-03-10 | Valcore Jr John C | Methods and arrangement for detecting a wafer-released event within a plasma processing chamber |
| US8797705B2 (en) * | 2009-09-10 | 2014-08-05 | Lam Research Corporation | Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential |
| AU2012301936A1 (en) * | 2011-08-30 | 2014-03-27 | Watlow Electric Manufacturing Company | System and method for controlling a thermal array |
| CN104037045B (zh) * | 2013-03-04 | 2016-05-11 | 中微半导体设备(上海)有限公司 | 测试基片去夹持终点的方法 |
| CN106796909A (zh) | 2014-06-17 | 2017-05-31 | 瑞士艾发科技 | 具有射频分路的静电卡盘 |
| US10024825B2 (en) * | 2014-12-26 | 2018-07-17 | Axcelis Technologies, Inc. | Wafer clamp detection based on vibration or acoustic characteristic analysis |
| US11114327B2 (en) | 2017-08-29 | 2021-09-07 | Applied Materials, Inc. | ESC substrate support with chucking force control |
| US10546731B1 (en) * | 2018-10-05 | 2020-01-28 | Applied Materials, Inc. | Method, apparatus and system for wafer dechucking using dynamic voltage sweeping |
| WO2020126963A1 (en) * | 2018-12-20 | 2020-06-25 | Asml Netherlands B.V. | Object table comprising an electrostatic clamp |
| KR102677038B1 (ko) | 2020-05-22 | 2024-06-19 | 세메스 주식회사 | 정전 척과 그 제조 방법 및 기판 처리 장치 |
| JP7419288B2 (ja) * | 2021-03-30 | 2024-01-22 | キヤノントッキ株式会社 | 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法 |
| KR102677251B1 (ko) | 2021-10-28 | 2024-06-20 | 세메스 주식회사 | 기판 테스트 장치 및 이를 이용하는 디척킹 포스 측정 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58114437A (ja) * | 1981-12-26 | 1983-07-07 | Fujitsu Ltd | 静電吸着方法 |
| US5103367A (en) * | 1987-05-06 | 1992-04-07 | Unisearch Limited | Electrostatic chuck using A.C. field excitation |
| JPH03169041A (ja) * | 1989-11-29 | 1991-07-22 | Japan Synthetic Rubber Co Ltd | 真空処理装置 |
| JPH05129421A (ja) * | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | 静電チヤツク |
| US5684669A (en) * | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Method for dechucking a workpiece from an electrostatic chuck |
| US5436790A (en) * | 1993-01-15 | 1995-07-25 | Eaton Corporation | Wafer sensing and clamping monitor |
| US5444597A (en) * | 1993-01-15 | 1995-08-22 | Blake; Julian G. | Wafer release method and apparatus |
| US5459632A (en) * | 1994-03-07 | 1995-10-17 | Applied Materials, Inc. | Releasing a workpiece from an electrostatic chuck |
| US5491603A (en) * | 1994-04-28 | 1996-02-13 | Applied Materials, Inc. | Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer |
| US5790365A (en) | 1996-07-31 | 1998-08-04 | Applied Materials, Inc. | Method and apparatus for releasing a workpiece from and electrostatic chuck |
| US5818682A (en) * | 1996-08-13 | 1998-10-06 | Applied Materials, Inc. | Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck |
| JP4226101B2 (ja) * | 1998-05-12 | 2009-02-18 | 株式会社アルバック | 静電チャックプレート表面からの基板離脱方法 |
| US6125025A (en) * | 1998-09-30 | 2000-09-26 | Lam Research Corporation | Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors |
-
2000
- 2000-01-21 US US09/489,458 patent/US6307728B1/en not_active Expired - Lifetime
- 2000-12-20 TW TW089127434A patent/TW496809B/zh not_active IP Right Cessation
-
2001
- 2001-01-19 EP EP01300467A patent/EP1118425A3/en not_active Withdrawn
- 2001-01-19 KR KR1020010003202A patent/KR100804842B1/ko not_active Expired - Lifetime
- 2001-01-22 JP JP2001013515A patent/JP2001298073A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI493620B (zh) * | 2010-06-29 | 2015-07-21 | Global Unichip Corp | 調整導線蝕刻機內的靜電吸盤電壓以釋放累積電荷 |
| CN111247631A (zh) * | 2017-10-30 | 2020-06-05 | 瓦里安半导体设备公司 | 减少背面工件损坏的系统以及方法 |
| US10732615B2 (en) | 2017-10-30 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | System and method for minimizing backside workpiece damage |
| TWI723290B (zh) * | 2017-10-30 | 2021-04-01 | 美商瓦里安半導體設備公司 | 減少在熱轉變期間對工件的損壞的系統、非暫時性電腦可讀存儲介質及方法 |
| CN111247631B (zh) * | 2017-10-30 | 2023-07-18 | 瓦里安半导体设备公司 | 减少热转变对工件的损坏的系统、可读存储介质及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6307728B1 (en) | 2001-10-23 |
| EP1118425A3 (en) | 2004-02-04 |
| EP1118425A2 (en) | 2001-07-25 |
| JP2001298073A (ja) | 2001-10-26 |
| KR100804842B1 (ko) | 2008-02-20 |
| KR20010076392A (ko) | 2001-08-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |