JP2001250956A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2001250956A
JP2001250956A JP2000062908A JP2000062908A JP2001250956A JP 2001250956 A JP2001250956 A JP 2001250956A JP 2000062908 A JP2000062908 A JP 2000062908A JP 2000062908 A JP2000062908 A JP 2000062908A JP 2001250956 A JP2001250956 A JP 2001250956A
Authority
JP
Japan
Prior art keywords
silicon oxynitride
film
oxynitride film
tft
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000062908A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001250956A5 (enExample
Inventor
Jun Koyama
潤 小山
Hideto Kitakado
英人 北角
Masataka Ito
政隆 伊藤
Hiroyuki Ogawa
裕之 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Sharp Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000062908A priority Critical patent/JP2001250956A/ja
Priority to US09/800,147 priority patent/US6492681B2/en
Priority to TW090105176A priority patent/TW483174B/zh
Publication of JP2001250956A publication Critical patent/JP2001250956A/ja
Priority to US10/291,081 priority patent/US6784495B2/en
Publication of JP2001250956A5 publication Critical patent/JP2001250956A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
JP2000062908A 2000-03-08 2000-03-08 半導体装置 Pending JP2001250956A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000062908A JP2001250956A (ja) 2000-03-08 2000-03-08 半導体装置
US09/800,147 US6492681B2 (en) 2000-03-08 2001-03-06 Semiconductor device
TW090105176A TW483174B (en) 2000-03-08 2001-03-06 Semiconductor device
US10/291,081 US6784495B2 (en) 2000-03-08 2002-11-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000062908A JP2001250956A (ja) 2000-03-08 2000-03-08 半導体装置

Publications (2)

Publication Number Publication Date
JP2001250956A true JP2001250956A (ja) 2001-09-14
JP2001250956A5 JP2001250956A5 (enExample) 2006-11-16

Family

ID=18582859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000062908A Pending JP2001250956A (ja) 2000-03-08 2000-03-08 半導体装置

Country Status (3)

Country Link
US (2) US6492681B2 (enExample)
JP (1) JP2001250956A (enExample)
TW (1) TW483174B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004282066A (ja) * 2003-03-12 2004-10-07 Samsung Sdi Co Ltd 薄膜トランジスタ及びこれを具備した平板表示素子
JP2007134712A (ja) * 2005-11-07 2007-05-31 Samsung Electronics Co Ltd 半導体装置及びその製造方法
WO2011064957A1 (ja) * 2009-11-25 2011-06-03 株式会社アルバック 絶縁膜の成膜方法
JP2014007381A (ja) * 2012-04-13 2014-01-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2014033181A (ja) * 2012-04-06 2014-02-20 Semiconductor Energy Lab Co Ltd 絶縁膜、及び半導体装置の作製方法、並びに半導体装置
JP2015529852A (ja) * 2012-09-03 2015-10-08 東方電気グループ（宜興）Ｍａｇｉ太陽エネルギー科技有限公司 アンチｐｉｄ効果を有する反射防止コーティングの製作方法
JP2016519429A (ja) * 2013-03-19 2016-06-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 多層パッシベーション又はエッチング停止ｔｆｔ

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6906383B1 (en) * 1994-07-14 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacture thereof
US6346730B1 (en) * 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
US6461899B1 (en) 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
JP4041675B2 (ja) * 2000-04-20 2008-01-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP4183222B2 (ja) * 2000-06-02 2008-11-19 日本電気株式会社 携帯電話機の省電力駆動方法
JP4663139B2 (ja) 2001-02-16 2011-03-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6949479B2 (en) * 2001-06-13 2005-09-27 Micron Technology, Inc. Methods of forming transistor devices
TWI288443B (en) 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
US20040201067A1 (en) * 2002-07-08 2004-10-14 Toppoly Optoelectronics Corp. LLD structure of thin film transistor
JP2004071696A (ja) * 2002-08-02 2004-03-04 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US7605023B2 (en) * 2002-08-29 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device and heat treatment method therefor
JP4627961B2 (ja) * 2002-09-20 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20040201068A1 (en) * 2002-10-02 2004-10-14 Toppoly Optoelectronics Corp. Process for producing thin film transistor
JP2007273919A (ja) 2006-03-31 2007-10-18 Nec Corp 半導体装置及びその製造方法
KR102764209B1 (ko) 2020-02-24 2025-02-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 표시 장치 및 이의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269510A (ja) * 1998-12-29 2000-09-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001015764A (ja) * 1999-04-30 2001-01-19 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
KR100321541B1 (ko) 1994-03-09 2002-06-20 야마자끼 순페이 능동 매트릭스 디스플레이 장치의 작동 방법
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269510A (ja) * 1998-12-29 2000-09-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001015764A (ja) * 1999-04-30 2001-01-19 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004282066A (ja) * 2003-03-12 2004-10-07 Samsung Sdi Co Ltd 薄膜トランジスタ及びこれを具備した平板表示素子
JP2007134712A (ja) * 2005-11-07 2007-05-31 Samsung Electronics Co Ltd 半導体装置及びその製造方法
WO2011064957A1 (ja) * 2009-11-25 2011-06-03 株式会社アルバック 絶縁膜の成膜方法
JP2011114045A (ja) * 2009-11-25 2011-06-09 Ulvac Japan Ltd 絶縁膜の成膜方法
KR20200027055A (ko) * 2012-04-06 2020-03-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR102125824B1 (ko) 2012-04-06 2020-06-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US12414334B2 (en) 2012-04-06 2025-09-09 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US11437523B2 (en) 2012-04-06 2022-09-06 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9570626B2 (en) 2012-04-06 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US10741694B2 (en) 2012-04-06 2020-08-11 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US10096719B2 (en) 2012-04-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
JP2014033181A (ja) * 2012-04-06 2014-02-20 Semiconductor Energy Lab Co Ltd 絶縁膜、及び半導体装置の作製方法、並びに半導体装置
JP2014007381A (ja) * 2012-04-13 2014-01-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR20200050921A (ko) * 2012-04-13 2020-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US10170599B2 (en) 2012-04-13 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating films with different thicknesses and method for manufacturing the semiconductor device
JP2017059851A (ja) * 2012-04-13 2017-03-23 株式会社半導体エネルギー研究所 半導体装置
KR102355315B1 (ko) 2012-04-13 2022-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2015529852A (ja) * 2012-09-03 2015-10-08 東方電気グループ（宜興）Ｍａｇｉ太陽エネルギー科技有限公司 アンチｐｉｄ効果を有する反射防止コーティングの製作方法
JP2016519429A (ja) * 2013-03-19 2016-06-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 多層パッシベーション又はエッチング停止ｔｆｔ

Also Published As

Publication number Publication date
TW483174B (en) 2002-04-11
US20030075761A1 (en) 2003-04-24
US20020033513A1 (en) 2002-03-21
US6784495B2 (en) 2004-08-31
US6492681B2 (en) 2002-12-10

Similar Documents

Publication Publication Date Title
JP2001250956A (ja) 半導体装置
US9786787B2 (en) Semiconductor device and fabrication method thereof
JP5298094B2 (ja) 半導体装置及びその作製方法
JP4294622B2 (ja) 半導体装置の作製方法
US6727124B2 (en) Method of manufacturing a TFT using a catalytic element to promote crystallization of a semiconductor film and gettering the catalytic element
US7821008B2 (en) Semiconductor device and manufacturing method thereof
JP2001007335A (ja) 半導体装置の作製方法
JP2002246395A (ja) 半導体装置の作製方法
JP2002246394A (ja) 半導体装置の作製方法
JP4522529B2 (ja) 半導体装置およびその作製方法
JP4785258B2 (ja) 半導体装置及びその作製方法
JP3983460B2 (ja) 半導体装置の作製方法
JP2000133594A (ja) 半導体装置の作製方法
JP4850763B2 (ja) 半導体装置の作製方法
JP2001284601A (ja) 半導体装置及びその作製方法
JP2000269513A (ja) 半導体装置およびその作製方法
JP4641586B2 (ja) 半導体装置の作製方法
JP4766724B2 (ja) 半導体装置の作製方法
JP2000200763A (ja) 半導体装置及びその作製方法
JP2002222954A (ja) 電気光学装置およびその作製方法
JP2001156295A (ja) 半導体装置の作製方法
JP4700159B2 (ja) 半導体装置の作製方法
JP2002162647A (ja) 電気光学装置およびその作製方法
JP2002222960A (ja) 電気光学装置およびその作製方法
JP2001320053A (ja) 半導体装置およびその作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060927

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060927

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091029

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091124

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100420