JP2011114045A - 絶縁膜の成膜方法 - Google Patents
絶縁膜の成膜方法 Download PDFInfo
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- JP2011114045A JP2011114045A JP2009266953A JP2009266953A JP2011114045A JP 2011114045 A JP2011114045 A JP 2011114045A JP 2009266953 A JP2009266953 A JP 2009266953A JP 2009266953 A JP2009266953 A JP 2009266953A JP 2011114045 A JP2011114045 A JP 2011114045A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】本発明の一実施形態に係る絶縁膜の成膜方法においては、反応性ガスとして、窒素と酸素の混合ガスが用いられる。酸素に窒素を混合することで成膜レートが上昇し、窒素の流量比が80〜85%のときに成膜レートの最大値が得られる。このときの成膜レートは、窒素の流量比が0%のときの約2倍である。窒素の流量比が90%を超えると、成膜レートの低下が顕著となる。得られたシリコン酸窒化膜は、スパッタリング法で成膜されたシリコン窒化膜よりも高い絶縁耐圧特性を有する。したがって、上記成膜方法によれば、スパッタリング法によって絶縁特性に優れた絶縁膜を高い成膜レートで成膜することが可能となる。
【選択図】図2
Description
図1は、本発明の一実施形態に係るスパッタリング装置を示す概略平面図である。スパッタリング装置100は、基板Sの表面に絶縁膜(シリコン酸窒化膜(SiON))Fを成膜する成膜室101と、ロード/アンロード室102と、成膜室101とロード/アンロード室102とを接続するゲートバルブ103とを有する。
次に、スパッタリング装置100を用いた絶縁膜の成膜方法について説明する。
101…成膜室
104…スパッタリングカソード
106…ガス導入ライン
F…絶縁膜
S…基板
T…ターゲット
Claims (5)
- Siターゲットを有する真空チャンバ内に基板を配置し、
窒素の流量比が0%<N2/(N2+O2)≦90%である、窒素及び酸素を含むスパッタガスを前記真空チャンバ内に導入し、
前記スパッタガスのプラズマで前記ターゲットをスパッタすることで、前記基板上にシリコン酸窒化膜を形成する
絶縁膜の成膜方法。 - 請求項1に記載の絶縁膜の成膜方法であって、
前記流量比は、75%≦N2/(N2+O2)≦90%である
絶縁膜の成膜方法。 - 請求項2に記載の絶縁膜の成膜方法であって、
前記スパッタガスは、アルゴンをさらに含み、
前記窒素及び酸素の総流量は前記アルゴンの流量の0.5倍以上である
絶縁膜の成膜方法。 - 請求項1に記載の絶縁膜の成膜方法であって、
前記シリコン酸窒化膜の屈折率は、1.5以上1.7以下である
絶縁膜の成膜方法。 - 請求項1に記載の絶縁膜の成膜方法であって、
前記基板は高分子フィルムまたはアルカリガラスである
絶縁膜の成膜方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009266953A JP5605674B2 (ja) | 2009-11-25 | 2009-11-25 | 絶縁膜の成膜方法 |
PCT/JP2010/006641 WO2011064957A1 (ja) | 2009-11-25 | 2010-11-11 | 絶縁膜の成膜方法 |
TW99139742A TW201122146A (en) | 2009-11-25 | 2010-11-18 | Deposition method for insulating layer |
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JP2009266953A JP5605674B2 (ja) | 2009-11-25 | 2009-11-25 | 絶縁膜の成膜方法 |
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JP2011114045A true JP2011114045A (ja) | 2011-06-09 |
JP5605674B2 JP5605674B2 (ja) | 2014-10-15 |
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JP2009266953A Active JP5605674B2 (ja) | 2009-11-25 | 2009-11-25 | 絶縁膜の成膜方法 |
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JP (1) | JP5605674B2 (ja) |
TW (1) | TW201122146A (ja) |
WO (1) | WO2011064957A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020196915A (ja) * | 2019-05-31 | 2020-12-10 | 株式会社アルバック | カーボン膜の成膜方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001250956A (ja) * | 2000-03-08 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2002280384A (ja) * | 2001-03-19 | 2002-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成方法 |
JP2005307222A (ja) * | 2004-04-16 | 2005-11-04 | Nippon Telegr & Teleph Corp <Ntt> | 酸窒化シリコン膜の形成方法及び形成装置 |
JP2007092095A (ja) * | 2005-09-27 | 2007-04-12 | Shincron:Kk | 薄膜形成方法及び薄膜形成装置 |
JP2009032796A (ja) * | 2007-07-25 | 2009-02-12 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
JP2009123737A (ja) * | 2007-11-12 | 2009-06-04 | Tohoku Univ | シリコン酸化膜の堆積方法 |
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2009
- 2009-11-25 JP JP2009266953A patent/JP5605674B2/ja active Active
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2010
- 2010-11-11 WO PCT/JP2010/006641 patent/WO2011064957A1/ja active Application Filing
- 2010-11-18 TW TW99139742A patent/TW201122146A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001250956A (ja) * | 2000-03-08 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2002280384A (ja) * | 2001-03-19 | 2002-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成方法 |
JP2005307222A (ja) * | 2004-04-16 | 2005-11-04 | Nippon Telegr & Teleph Corp <Ntt> | 酸窒化シリコン膜の形成方法及び形成装置 |
JP2007092095A (ja) * | 2005-09-27 | 2007-04-12 | Shincron:Kk | 薄膜形成方法及び薄膜形成装置 |
JP2009032796A (ja) * | 2007-07-25 | 2009-02-12 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
JP2009123737A (ja) * | 2007-11-12 | 2009-06-04 | Tohoku Univ | シリコン酸化膜の堆積方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020196915A (ja) * | 2019-05-31 | 2020-12-10 | 株式会社アルバック | カーボン膜の成膜方法 |
JP7384574B2 (ja) | 2019-05-31 | 2023-11-21 | 株式会社アルバック | カーボン膜の成膜方法 |
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Publication number | Publication date |
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TW201122146A (en) | 2011-07-01 |
WO2011064957A1 (ja) | 2011-06-03 |
JP5605674B2 (ja) | 2014-10-15 |
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