JP2001244331A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

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Publication number
JP2001244331A
JP2001244331A JP2000050903A JP2000050903A JP2001244331A JP 2001244331 A JP2001244331 A JP 2001244331A JP 2000050903 A JP2000050903 A JP 2000050903A JP 2000050903 A JP2000050903 A JP 2000050903A JP 2001244331 A JP2001244331 A JP 2001244331A
Authority
JP
Japan
Prior art keywords
film
insulating layer
layer
wiring
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000050903A
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English (en)
Japanese (ja)
Other versions
JP2001244331A5 (https=
Inventor
Junji Noguchi
純司 野口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000050903A priority Critical patent/JP2001244331A/ja
Publication of JP2001244331A publication Critical patent/JP2001244331A/ja
Publication of JP2001244331A5 publication Critical patent/JP2001244331A5/ja
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000050903A 2000-02-28 2000-02-28 半導体集積回路装置およびその製造方法 Pending JP2001244331A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000050903A JP2001244331A (ja) 2000-02-28 2000-02-28 半導体集積回路装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000050903A JP2001244331A (ja) 2000-02-28 2000-02-28 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001244331A true JP2001244331A (ja) 2001-09-07
JP2001244331A5 JP2001244331A5 (https=) 2005-04-07

Family

ID=18572635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000050903A Pending JP2001244331A (ja) 2000-02-28 2000-02-28 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2001244331A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005236141A (ja) * 2004-02-20 2005-09-02 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
JP2006245268A (ja) * 2005-03-03 2006-09-14 Fujitsu Ltd 半導体装置の製造方法
JP2007027347A (ja) * 2005-07-15 2007-02-01 Sony Corp 半導体装置およびその製造方法
JP2008010630A (ja) * 2006-06-29 2008-01-17 Sharp Corp 半導体装置およびその製造方法
US7326641B2 (en) 2003-12-04 2008-02-05 Renesas Technology Corp. Semiconductor device and method for manufacturing the same
CN100468689C (zh) * 2004-01-08 2009-03-11 台湾积体电路制造股份有限公司 预防双重金属镶嵌结构的金属漏电的氮化物阻障层

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326641B2 (en) 2003-12-04 2008-02-05 Renesas Technology Corp. Semiconductor device and method for manufacturing the same
CN100468689C (zh) * 2004-01-08 2009-03-11 台湾积体电路制造股份有限公司 预防双重金属镶嵌结构的金属漏电的氮化物阻障层
JP2005236141A (ja) * 2004-02-20 2005-09-02 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
JP2006245268A (ja) * 2005-03-03 2006-09-14 Fujitsu Ltd 半導体装置の製造方法
JP2007027347A (ja) * 2005-07-15 2007-02-01 Sony Corp 半導体装置およびその製造方法
JP2008010630A (ja) * 2006-06-29 2008-01-17 Sharp Corp 半導体装置およびその製造方法

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