JP2001237456A - 発光素子 - Google Patents

発光素子

Info

Publication number
JP2001237456A
JP2001237456A JP2000048880A JP2000048880A JP2001237456A JP 2001237456 A JP2001237456 A JP 2001237456A JP 2000048880 A JP2000048880 A JP 2000048880A JP 2000048880 A JP2000048880 A JP 2000048880A JP 2001237456 A JP2001237456 A JP 2001237456A
Authority
JP
Japan
Prior art keywords
layer
barrier layer
light emitting
upper barrier
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000048880A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001237456A5 (enExample
Inventor
Motokazu Yamada
元量 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2000048880A priority Critical patent/JP2001237456A/ja
Publication of JP2001237456A publication Critical patent/JP2001237456A/ja
Publication of JP2001237456A5 publication Critical patent/JP2001237456A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2000048880A 2000-02-21 2000-02-21 発光素子 Pending JP2001237456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000048880A JP2001237456A (ja) 2000-02-21 2000-02-21 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000048880A JP2001237456A (ja) 2000-02-21 2000-02-21 発光素子

Publications (2)

Publication Number Publication Date
JP2001237456A true JP2001237456A (ja) 2001-08-31
JP2001237456A5 JP2001237456A5 (enExample) 2007-04-12

Family

ID=18570904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000048880A Pending JP2001237456A (ja) 2000-02-21 2000-02-21 発光素子

Country Status (1)

Country Link
JP (1) JP2001237456A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030083821A (ko) * 2002-04-22 2003-11-01 엘지전자 주식회사 질화물 반도체 발광 소자의 제조 방법
JP2006237254A (ja) * 2005-02-24 2006-09-07 Toyoda Gosei Co Ltd 半導体素子及びその製造方法
JP2007080996A (ja) * 2005-09-13 2007-03-29 Sony Corp ＧａＮ系半導体発光素子及びその製造方法
JP2007080997A (ja) * 2005-09-13 2007-03-29 Sony Corp ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
KR100716647B1 (ko) 2006-03-21 2007-05-09 서울옵토디바이스주식회사 전류분산을 위한 에너지 장벽층을 갖는 발광 다이오드
JP2007324546A (ja) * 2006-06-05 2007-12-13 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法、及び窒化ガリウム系化合物半導体発光素子、並びにランプ
JP2013187538A (ja) * 2013-02-01 2013-09-19 Toshiba Corp 窒化物半導体素子及びウェーハ
CN103782398A (zh) * 2011-09-07 2014-05-07 欧司朗光电半导体有限公司 光电子器件
WO2014192206A1 (ja) * 2013-05-29 2014-12-04 パナソニックＩｐマネジメント株式会社 半導体発光素子
US9064996B2 (en) 2008-09-25 2015-06-23 Toyoda Gosei Co., Ltd. Group III nitride-based compound semiconductor light-emitting device and production method therefor

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030083821A (ko) * 2002-04-22 2003-11-01 엘지전자 주식회사 질화물 반도체 발광 소자의 제조 방법
JP2006237254A (ja) * 2005-02-24 2006-09-07 Toyoda Gosei Co Ltd 半導体素子及びその製造方法
US8993992B2 (en) 2005-09-13 2015-03-31 Sony Corporation GaN based semiconductor light-emitting device and method for producing same
JP2007080996A (ja) * 2005-09-13 2007-03-29 Sony Corp ＧａＮ系半導体発光素子及びその製造方法
JP2007080997A (ja) * 2005-09-13 2007-03-29 Sony Corp ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
US10050177B2 (en) 2005-09-13 2018-08-14 Sony Corporation GaN based semiconductor light-emitting device and method for producing same
KR100716647B1 (ko) 2006-03-21 2007-05-09 서울옵토디바이스주식회사 전류분산을 위한 에너지 장벽층을 갖는 발광 다이오드
JP2007324546A (ja) * 2006-06-05 2007-12-13 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法、及び窒化ガリウム系化合物半導体発光素子、並びにランプ
US9064996B2 (en) 2008-09-25 2015-06-23 Toyoda Gosei Co., Ltd. Group III nitride-based compound semiconductor light-emitting device and production method therefor
JP2014525682A (ja) * 2011-09-07 2014-09-29 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス部品
US9059353B2 (en) 2011-09-07 2015-06-16 Osram Opto Semiconductors Gmbh Optoelectronic component
CN103782398A (zh) * 2011-09-07 2014-05-07 欧司朗光电半导体有限公司 光电子器件
KR101909961B1 (ko) * 2011-09-07 2018-10-19 오스람 옵토 세미컨덕터스 게엠베하 광전자 컴포넌트
JP2013187538A (ja) * 2013-02-01 2013-09-19 Toshiba Corp 窒化物半導体素子及びウェーハ
WO2014192206A1 (ja) * 2013-05-29 2014-12-04 パナソニックＩｐマネジメント株式会社 半導体発光素子
JPWO2014192206A1 (ja) * 2013-05-29 2017-02-23 パナソニックＩｐマネジメント株式会社 半導体発光素子

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