JP2001237239A5 - - Google Patents

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Publication number
JP2001237239A5
JP2001237239A5 JP2000388743A JP2000388743A JP2001237239A5 JP 2001237239 A5 JP2001237239 A5 JP 2001237239A5 JP 2000388743 A JP2000388743 A JP 2000388743A JP 2000388743 A JP2000388743 A JP 2000388743A JP 2001237239 A5 JP2001237239 A5 JP 2001237239A5
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JP
Japan
Prior art keywords
processing chamber
region
gas
distribution plate
thermal processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000388743A
Other languages
English (en)
Japanese (ja)
Other versions
JP4665204B2 (ja
JP2001237239A (ja
Filing date
Publication date
Priority claimed from US09/468,238 external-priority patent/US6302963B1/en
Application filed filed Critical
Publication of JP2001237239A publication Critical patent/JP2001237239A/ja
Publication of JP2001237239A5 publication Critical patent/JP2001237239A5/ja
Application granted granted Critical
Publication of JP4665204B2 publication Critical patent/JP4665204B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000388743A 1999-12-21 2000-12-21 熱加工チャンバー Expired - Fee Related JP4665204B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/468,238 US6302963B1 (en) 1999-12-21 1999-12-21 Bell jar having integral gas distribution channeling
US09/468238 1999-12-21

Publications (3)

Publication Number Publication Date
JP2001237239A JP2001237239A (ja) 2001-08-31
JP2001237239A5 true JP2001237239A5 (enExample) 2008-01-10
JP4665204B2 JP4665204B2 (ja) 2011-04-06

Family

ID=23858991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000388743A Expired - Fee Related JP4665204B2 (ja) 1999-12-21 2000-12-21 熱加工チャンバー

Country Status (5)

Country Link
US (1) US6302963B1 (enExample)
EP (1) EP1111660A3 (enExample)
JP (1) JP4665204B2 (enExample)
KR (1) KR100559198B1 (enExample)
TW (1) TW499698B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3472482B2 (ja) * 1998-06-30 2003-12-02 富士通株式会社 半導体装置の製造方法と製造装置
KR100360401B1 (ko) * 2000-03-17 2002-11-13 삼성전자 주식회사 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
US6576981B1 (en) * 2001-07-03 2003-06-10 Lsi Logic Corporation Reduced particulate etching
FR3057390B1 (fr) 2016-10-11 2018-12-07 Soitec Four vertical avec dispositif de piegeage de contaminants
US11266005B2 (en) * 2019-02-07 2022-03-01 Fermi Research Alliance, Llc Methods for treating superconducting cavities

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226820A (ja) * 1985-07-26 1987-02-04 Ibiden Co Ltd 炭化珪素質プラズマ分散板
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
JPH0642474B2 (ja) 1988-03-31 1994-06-01 株式会社東芝 半導体製造装置
JPH07120634B2 (ja) * 1988-12-27 1995-12-20 東京エレクトロン東北株式会社 処理装置
US5160545A (en) 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
JP2729238B2 (ja) * 1989-12-22 1998-03-18 東京エレクトロン株式会社 縦型処理装置
JP2992576B2 (ja) * 1990-03-31 1999-12-20 東京エレクトロン株式会社 縦型熱処理装置
JPH0468522A (ja) * 1990-07-10 1992-03-04 Tokyo Electron Sagami Ltd 縦型熱処理装置
JP3077195B2 (ja) * 1990-11-27 2000-08-14 日本電気株式会社 半導体熱処理用縦型プロセスチューブの構造
JPH04196522A (ja) * 1990-11-28 1992-07-16 Nec Corp 縦型拡散炉
JPH04280420A (ja) * 1991-03-07 1992-10-06 Toshiba Corp 熱処理装置
US5318633A (en) * 1991-03-07 1994-06-07 Tokyo Electron Sagami Limited Heat treating apparatus
JPH05251372A (ja) * 1992-03-06 1993-09-28 Matsushita Electron Corp 縦型拡散炉
JPH0620980A (ja) * 1992-07-01 1994-01-28 Nec Corp 縦型熱処理炉
JP2805589B2 (ja) * 1994-01-27 1998-09-30 黄 哲周 低圧化学蒸着装置
JPH08107082A (ja) * 1994-10-04 1996-04-23 Sony Corp 縦型熱処理装置
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5653806A (en) 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
JPH09249455A (ja) * 1996-03-14 1997-09-22 Toyo Tanso Kk 炭化珪素成形体の製造方法
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
KR100227850B1 (ko) * 1996-05-06 1999-11-01 윤종용 산화막 성장 공정 및 lp cvd 공정 겸용 수직형 확산로
US5976261A (en) 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors

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