JP4665204B2 - 熱加工チャンバー - Google Patents

熱加工チャンバー Download PDF

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Publication number
JP4665204B2
JP4665204B2 JP2000388743A JP2000388743A JP4665204B2 JP 4665204 B2 JP4665204 B2 JP 4665204B2 JP 2000388743 A JP2000388743 A JP 2000388743A JP 2000388743 A JP2000388743 A JP 2000388743A JP 4665204 B2 JP4665204 B2 JP 4665204B2
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JP
Japan
Prior art keywords
processing chamber
thermal processing
gas
region
dispersion plate
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Expired - Fee Related
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JP2000388743A
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English (en)
Japanese (ja)
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JP2001237239A (ja
JP2001237239A5 (enExample
Inventor
マイケル ミトザン ジョン
Original Assignee
アクセリス テクノロジーズ インコーポレーテッド
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Application filed by アクセリス テクノロジーズ インコーポレーテッド filed Critical アクセリス テクノロジーズ インコーポレーテッド
Publication of JP2001237239A publication Critical patent/JP2001237239A/ja
Publication of JP2001237239A5 publication Critical patent/JP2001237239A5/ja
Application granted granted Critical
Publication of JP4665204B2 publication Critical patent/JP4665204B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2000388743A 1999-12-21 2000-12-21 熱加工チャンバー Expired - Fee Related JP4665204B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/468,238 US6302963B1 (en) 1999-12-21 1999-12-21 Bell jar having integral gas distribution channeling
US09/468238 1999-12-21

Publications (3)

Publication Number Publication Date
JP2001237239A JP2001237239A (ja) 2001-08-31
JP2001237239A5 JP2001237239A5 (enExample) 2008-01-10
JP4665204B2 true JP4665204B2 (ja) 2011-04-06

Family

ID=23858991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000388743A Expired - Fee Related JP4665204B2 (ja) 1999-12-21 2000-12-21 熱加工チャンバー

Country Status (5)

Country Link
US (1) US6302963B1 (enExample)
EP (1) EP1111660A3 (enExample)
JP (1) JP4665204B2 (enExample)
KR (1) KR100559198B1 (enExample)
TW (1) TW499698B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3472482B2 (ja) * 1998-06-30 2003-12-02 富士通株式会社 半導体装置の製造方法と製造装置
KR100360401B1 (ko) * 2000-03-17 2002-11-13 삼성전자 주식회사 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
US6576981B1 (en) * 2001-07-03 2003-06-10 Lsi Logic Corporation Reduced particulate etching
FR3057390B1 (fr) 2016-10-11 2018-12-07 Soitec Four vertical avec dispositif de piegeage de contaminants
US11266005B2 (en) * 2019-02-07 2022-03-01 Fermi Research Alliance, Llc Methods for treating superconducting cavities

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226820A (ja) * 1985-07-26 1987-02-04 Ibiden Co Ltd 炭化珪素質プラズマ分散板
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
JPH0642474B2 (ja) 1988-03-31 1994-06-01 株式会社東芝 半導体製造装置
JPH07120634B2 (ja) * 1988-12-27 1995-12-20 東京エレクトロン東北株式会社 処理装置
US5160545A (en) 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
JP2729238B2 (ja) * 1989-12-22 1998-03-18 東京エレクトロン株式会社 縦型処理装置
JP2992576B2 (ja) * 1990-03-31 1999-12-20 東京エレクトロン株式会社 縦型熱処理装置
JPH0468522A (ja) * 1990-07-10 1992-03-04 Tokyo Electron Sagami Ltd 縦型熱処理装置
JP3077195B2 (ja) * 1990-11-27 2000-08-14 日本電気株式会社 半導体熱処理用縦型プロセスチューブの構造
JPH04196522A (ja) * 1990-11-28 1992-07-16 Nec Corp 縦型拡散炉
JPH04280420A (ja) * 1991-03-07 1992-10-06 Toshiba Corp 熱処理装置
US5318633A (en) * 1991-03-07 1994-06-07 Tokyo Electron Sagami Limited Heat treating apparatus
JPH05251372A (ja) * 1992-03-06 1993-09-28 Matsushita Electron Corp 縦型拡散炉
JPH0620980A (ja) * 1992-07-01 1994-01-28 Nec Corp 縦型熱処理炉
JP2805589B2 (ja) * 1994-01-27 1998-09-30 黄 哲周 低圧化学蒸着装置
JPH08107082A (ja) * 1994-10-04 1996-04-23 Sony Corp 縦型熱処理装置
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5653806A (en) 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
JPH09249455A (ja) * 1996-03-14 1997-09-22 Toyo Tanso Kk 炭化珪素成形体の製造方法
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
KR100227850B1 (ko) * 1996-05-06 1999-11-01 윤종용 산화막 성장 공정 및 lp cvd 공정 겸용 수직형 확산로
US5976261A (en) 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors

Also Published As

Publication number Publication date
EP1111660A2 (en) 2001-06-27
KR20010062458A (ko) 2001-07-07
JP2001237239A (ja) 2001-08-31
KR100559198B1 (ko) 2006-03-10
TW499698B (en) 2002-08-21
US20010037767A1 (en) 2001-11-08
US6302963B1 (en) 2001-10-16
EP1111660A3 (en) 2003-12-10

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