JP2001196320A - ドーピング方法、半導体装置の製造方法、半導体素子の製造方法及びその製造装置、ドーピング装置 - Google Patents

ドーピング方法、半導体装置の製造方法、半導体素子の製造方法及びその製造装置、ドーピング装置

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Publication number
JP2001196320A
JP2001196320A JP2000310154A JP2000310154A JP2001196320A JP 2001196320 A JP2001196320 A JP 2001196320A JP 2000310154 A JP2000310154 A JP 2000310154A JP 2000310154 A JP2000310154 A JP 2000310154A JP 2001196320 A JP2001196320 A JP 2001196320A
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Japan
Prior art keywords
heating
doping
laser
wafer
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2000310154A
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English (en)
Japanese (ja)
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JP2001196320A5 (enExample
Inventor
Takashi Obara
隆 小原
Hideki Nozaki
秀樹 野崎
Motoomi Kobayashi
源臣 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000310154A priority Critical patent/JP2001196320A/ja
Publication of JP2001196320A publication Critical patent/JP2001196320A/ja
Publication of JP2001196320A5 publication Critical patent/JP2001196320A5/ja
Pending legal-status Critical Current

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JP2000310154A 1999-10-26 2000-10-11 ドーピング方法、半導体装置の製造方法、半導体素子の製造方法及びその製造装置、ドーピング装置 Pending JP2001196320A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000310154A JP2001196320A (ja) 1999-10-26 2000-10-11 ドーピング方法、半導体装置の製造方法、半導体素子の製造方法及びその製造装置、ドーピング装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30361499 1999-10-26
JP11-303614 1999-10-26
JP2000310154A JP2001196320A (ja) 1999-10-26 2000-10-11 ドーピング方法、半導体装置の製造方法、半導体素子の製造方法及びその製造装置、ドーピング装置

Publications (2)

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JP2001196320A true JP2001196320A (ja) 2001-07-19
JP2001196320A5 JP2001196320A5 (enExample) 2007-11-15

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ID=26563571

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JP2000310154A Pending JP2001196320A (ja) 1999-10-26 2000-10-11 ドーピング方法、半導体装置の製造方法、半導体素子の製造方法及びその製造装置、ドーピング装置

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JP (1) JP2001196320A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086414A (ja) * 2004-09-17 2006-03-30 Fuji Electric Holdings Co Ltd 逆阻止型絶縁ゲート形半導体装置およびその製造方法
JP2008004867A (ja) * 2006-06-26 2008-01-10 Denso Corp 半導体装置の製造方法
JP2015213193A (ja) * 2015-07-21 2015-11-26 ルネサスエレクトロニクス株式会社 Ｉｇｂｔ
JP2017041626A (ja) * 2015-08-18 2017-02-23 富士電機株式会社 半導体装置及びその製造方法
JP2017199942A (ja) * 2017-08-09 2017-11-02 ルネサスエレクトロニクス株式会社 半導体装置
US10026831B2 (en) 2015-08-18 2018-07-17 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630721A (en) * 1979-08-21 1981-03-27 Nec Corp Diffusing device of selected impurity
JPS58194386A (ja) * 1982-05-07 1983-11-12 Nec Corp 半導体素子の製造方法
JPS62144373A (ja) * 1985-12-18 1987-06-27 Masamitsu Mizuno 発光ダイオ−ドの製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630721A (en) * 1979-08-21 1981-03-27 Nec Corp Diffusing device of selected impurity
JPS58194386A (ja) * 1982-05-07 1983-11-12 Nec Corp 半導体素子の製造方法
JPS62144373A (ja) * 1985-12-18 1987-06-27 Masamitsu Mizuno 発光ダイオ−ドの製造装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086414A (ja) * 2004-09-17 2006-03-30 Fuji Electric Holdings Co Ltd 逆阻止型絶縁ゲート形半導体装置およびその製造方法
JP2008004867A (ja) * 2006-06-26 2008-01-10 Denso Corp 半導体装置の製造方法
JP2015213193A (ja) * 2015-07-21 2015-11-26 ルネサスエレクトロニクス株式会社 Ｉｇｂｔ
JP2017041626A (ja) * 2015-08-18 2017-02-23 富士電機株式会社 半導体装置及びその製造方法
US10026831B2 (en) 2015-08-18 2018-07-17 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US10205010B2 (en) 2015-08-18 2019-02-12 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP2017199942A (ja) * 2017-08-09 2017-11-02 ルネサスエレクトロニクス株式会社 半導体装置

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