JP2001180918A - リン化インジウムの直接合成法 - Google Patents
リン化インジウムの直接合成法Info
- Publication number
- JP2001180918A JP2001180918A JP2000352358A JP2000352358A JP2001180918A JP 2001180918 A JP2001180918 A JP 2001180918A JP 2000352358 A JP2000352358 A JP 2000352358A JP 2000352358 A JP2000352358 A JP 2000352358A JP 2001180918 A JP2001180918 A JP 2001180918A
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- indium
- temperature
- pressure
- synthesis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 230000002194 synthesizing effect Effects 0.000 title claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000011574 phosphorus Substances 0.000 claims abstract description 22
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 22
- 229910052738 indium Inorganic materials 0.000 claims abstract description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000003786 synthesis reaction Methods 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000003708 ampul Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000012494 Quartz wool Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- OBSZRRSYVTXPNB-UHFFFAOYSA-N tetraphosphorus Chemical compound P12P3P1P32 OBSZRRSYVTXPNB-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
- C01B25/082—Other phosphides of boron, aluminium, gallium or indium
- C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Catalysts (AREA)
- Saccharide Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT99A002423 | 1999-11-19 | ||
| IT1999MI002423A IT1314237B1 (it) | 1999-11-19 | 1999-11-19 | Procedimento di sintesi diretta di fosfuro di indio |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001180918A true JP2001180918A (ja) | 2001-07-03 |
Family
ID=11383989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000352358A Withdrawn JP2001180918A (ja) | 1999-11-19 | 2000-11-20 | リン化インジウムの直接合成法 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2001180918A (it) |
| CN (1) | CN1198760C (it) |
| CA (1) | CA2326056C (it) |
| DE (1) | DE10057413B4 (it) |
| FR (1) | FR2802535B1 (it) |
| GB (1) | GB2356395B (it) |
| IT (1) | IT1314237B1 (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7098161B2 (en) * | 2000-10-20 | 2006-08-29 | Abb Lummus Global Inc. | Method of treating zeolite |
| GB2454902B (en) | 2007-11-22 | 2012-12-05 | Ct Fa R Angewandte Nanotechnologie Can Gmbh | A method for the manufacture of III-V particles |
| US8524966B1 (en) * | 2012-05-14 | 2013-09-03 | Uop Llc | Catalysts for improved cumene production and method of making and using same |
| WO2014135661A1 (en) * | 2013-03-08 | 2014-09-12 | Bp Chemicals Limited | Carbonylation catalyst and process |
| CN104556100B (zh) * | 2013-10-24 | 2018-04-13 | 中国石油化工股份有限公司 | 一种硼硅β分子筛中有机胺模板剂的脱除方法 |
| CN104556109B (zh) * | 2013-10-29 | 2017-01-25 | 中国石油化工股份有限公司 | 一种钛硅分子筛的制备方法和一种苯酚氧化方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2032895B (en) * | 1978-10-25 | 1983-04-27 | Cambridge Analysing Instr | Direct synthesis of inter-metallic compounds |
| DE3577405D1 (de) * | 1984-12-28 | 1990-06-07 | Sumitomo Electric Industries | Verfahren zur herstellung von polykristallen von halbleiterverbindungen und vorrichtung zu dessen durchfuehrung. |
| JPS61222911A (ja) * | 1985-03-28 | 1986-10-03 | Toshiba Corp | 燐化化合物の合成方法 |
-
1999
- 1999-11-19 IT IT1999MI002423A patent/IT1314237B1/it active
-
2000
- 2000-11-15 CA CA002326056A patent/CA2326056C/en not_active Expired - Fee Related
- 2000-11-15 GB GB0027887A patent/GB2356395B/en not_active Expired - Fee Related
- 2000-11-17 FR FR0014836A patent/FR2802535B1/fr not_active Expired - Fee Related
- 2000-11-17 CN CN00137028.6A patent/CN1198760C/zh not_active Expired - Lifetime
- 2000-11-20 DE DE10057413A patent/DE10057413B4/de not_active Expired - Fee Related
- 2000-11-20 JP JP2000352358A patent/JP2001180918A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| IT1314237B1 (it) | 2002-12-06 |
| CA2326056C (en) | 2008-10-14 |
| ITMI992423A0 (it) | 1999-11-19 |
| DE10057413A1 (de) | 2001-06-07 |
| FR2802535B1 (fr) | 2002-07-12 |
| CA2326056A1 (en) | 2001-05-19 |
| GB2356395B (en) | 2002-01-09 |
| DE10057413B4 (de) | 2006-10-12 |
| ITMI992423A1 (it) | 2001-05-19 |
| GB2356395A (en) | 2001-05-23 |
| CN1198760C (zh) | 2005-04-27 |
| CN1305952A (zh) | 2001-08-01 |
| GB0027887D0 (en) | 2000-12-27 |
| FR2802535A1 (fr) | 2001-06-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20080205 |