JP2001176765A - 膜形成装置 - Google Patents

膜形成装置

Info

Publication number
JP2001176765A
JP2001176765A JP36099099A JP36099099A JP2001176765A JP 2001176765 A JP2001176765 A JP 2001176765A JP 36099099 A JP36099099 A JP 36099099A JP 36099099 A JP36099099 A JP 36099099A JP 2001176765 A JP2001176765 A JP 2001176765A
Authority
JP
Japan
Prior art keywords
wafer
solvent
container
concentration
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP36099099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001176765A5 (enExample
Inventor
Takahiro Kitano
高広 北野
Sukeaki Morikawa
祐晃 森川
Yukihiko Ezaki
幸彦 江崎
Nobukazu Ishizaka
信和 石坂
Norihisa Koga
法久 古閑
Kazuhiro Takeshita
和宏 竹下
Hirobumi Okuma
博文 大隈
Masami Akumoto
正己 飽本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP36099099A priority Critical patent/JP2001176765A/ja
Priority to US09/734,877 priority patent/US6676757B2/en
Priority to KR1020000076709A priority patent/KR100755796B1/ko
Priority to TW089126783A priority patent/TW509987B/zh
Publication of JP2001176765A publication Critical patent/JP2001176765A/ja
Priority to US10/728,768 priority patent/US6936107B2/en
Priority to US11/080,756 priority patent/US7087118B2/en
Publication of JP2001176765A5 publication Critical patent/JP2001176765A5/ja
Priority to KR1020070013949A priority patent/KR100739209B1/ko
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP36099099A 1999-12-17 1999-12-20 膜形成装置 Pending JP2001176765A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP36099099A JP2001176765A (ja) 1999-12-20 1999-12-20 膜形成装置
US09/734,877 US6676757B2 (en) 1999-12-17 2000-12-13 Coating film forming apparatus and coating unit
KR1020000076709A KR100755796B1 (ko) 1999-12-17 2000-12-14 도포막형성장치 및 도포유니트
TW089126783A TW509987B (en) 1999-12-17 2000-12-14 Coating film forming apparatus and coating unit
US10/728,768 US6936107B2 (en) 1999-12-17 2003-12-08 Coating film forming apparatus and coating unit
US11/080,756 US7087118B2 (en) 1999-12-17 2005-03-16 Coating film forming apparatus and coating unit
KR1020070013949A KR100739209B1 (ko) 1999-12-17 2007-02-09 도포막형성장치 및 도포유니트

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36099099A JP2001176765A (ja) 1999-12-20 1999-12-20 膜形成装置

Publications (2)

Publication Number Publication Date
JP2001176765A true JP2001176765A (ja) 2001-06-29
JP2001176765A5 JP2001176765A5 (enExample) 2005-08-18

Family

ID=18471735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36099099A Pending JP2001176765A (ja) 1999-12-17 1999-12-20 膜形成装置

Country Status (1)

Country Link
JP (1) JP2001176765A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6800569B2 (en) 2002-01-30 2004-10-05 Kabushiki Kaisha Toshiba Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
JP2006015302A (ja) * 2004-07-05 2006-01-19 Seiko Epson Corp 液滴吐出装置、および電気光学装置の製造方法
CN100402163C (zh) * 2001-07-05 2008-07-16 东京毅力科创株式会社 液体处理装置和液体处理方法
JP2019201075A (ja) * 2018-05-15 2019-11-21 東京エレクトロン株式会社 基板処理装置および基板処理方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100402163C (zh) * 2001-07-05 2008-07-16 东京毅力科创株式会社 液体处理装置和液体处理方法
US6800569B2 (en) 2002-01-30 2004-10-05 Kabushiki Kaisha Toshiba Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
US7312018B2 (en) 2002-01-30 2007-12-25 Kabushiki Kaisha Toshiba Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
US7604832B2 (en) 2002-01-30 2009-10-20 Kabushiki Kaisha Toshiba Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
US8071157B2 (en) 2002-01-30 2011-12-06 Kabushiki Kaisha Toshiba Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
JP2006015302A (ja) * 2004-07-05 2006-01-19 Seiko Epson Corp 液滴吐出装置、および電気光学装置の製造方法
JP2019201075A (ja) * 2018-05-15 2019-11-21 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7090468B2 (ja) 2018-05-15 2022-06-24 東京エレクトロン株式会社 基板処理装置および基板処理方法

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