JP2001042545A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2001042545A
JP2001042545A JP11216670A JP21667099A JP2001042545A JP 2001042545 A JP2001042545 A JP 2001042545A JP 11216670 A JP11216670 A JP 11216670A JP 21667099 A JP21667099 A JP 21667099A JP 2001042545 A JP2001042545 A JP 2001042545A
Authority
JP
Japan
Prior art keywords
pattern
light
mask
region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11216670A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001042545A5 (https=
Inventor
Shoji Hotta
尚二 堀田
Norio Hasegawa
昇雄 長谷川
Hiroshi Fukuda
宏 福田
Kazutaka Mori
和孝 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11216670A priority Critical patent/JP2001042545A/ja
Publication of JP2001042545A publication Critical patent/JP2001042545A/ja
Publication of JP2001042545A5 publication Critical patent/JP2001042545A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP11216670A 1999-07-30 1999-07-30 半導体装置の製造方法 Pending JP2001042545A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11216670A JP2001042545A (ja) 1999-07-30 1999-07-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11216670A JP2001042545A (ja) 1999-07-30 1999-07-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001042545A true JP2001042545A (ja) 2001-02-16
JP2001042545A5 JP2001042545A5 (https=) 2004-09-24

Family

ID=16692094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11216670A Pending JP2001042545A (ja) 1999-07-30 1999-07-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2001042545A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004077155A1 (ja) * 2003-02-27 2006-06-08 富士通株式会社 フォトマスク及び半導体装置の製造方法
JP2006301184A (ja) * 2005-04-19 2006-11-02 Sony Corp 位相シフトマスクの製造方法、近接効果補正装置およびプログラム
KR100675882B1 (ko) * 2004-12-22 2007-02-02 주식회사 하이닉스반도체 다중투과 위상 마스크 및 이를 이용한 노광 방법
US7638244B2 (en) 2004-02-16 2009-12-29 Kabushiki Kaisha Toshiba Method of correcting mask data, method of manufacturing a mask and method of manufacturing a semiconductor device
US7829246B2 (en) 2005-11-08 2010-11-09 Nec Electronics Corporation Method of forming pattern
JP2011520298A (ja) * 2009-05-13 2011-07-14 シノプシイス インコーポレイテッド 自動作成マスク及び多重マスク層を利用した単一集積回路層のパターン形成
JP2015025917A (ja) * 2013-07-25 2015-02-05 瑞晶電子股ふん有限公司 二重露光のマスク構造及び露光現像の方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004077155A1 (ja) * 2003-02-27 2006-06-08 富士通株式会社 フォトマスク及び半導体装置の製造方法
US7790335B2 (en) 2003-02-27 2010-09-07 Fujitsu Semiconductor Limited Photomask and manufacturing method of semiconductor device
JP4641799B2 (ja) * 2003-02-27 2011-03-02 富士通セミコンダクター株式会社 半導体装置の製造方法
US7638244B2 (en) 2004-02-16 2009-12-29 Kabushiki Kaisha Toshiba Method of correcting mask data, method of manufacturing a mask and method of manufacturing a semiconductor device
KR100675882B1 (ko) * 2004-12-22 2007-02-02 주식회사 하이닉스반도체 다중투과 위상 마스크 및 이를 이용한 노광 방법
US7759021B2 (en) 2004-12-22 2010-07-20 Hynix Semiconductor Inc. Multi-transmission phase mask and exposure method using the same
JP2006301184A (ja) * 2005-04-19 2006-11-02 Sony Corp 位相シフトマスクの製造方法、近接効果補正装置およびプログラム
US7829246B2 (en) 2005-11-08 2010-11-09 Nec Electronics Corporation Method of forming pattern
JP2011520298A (ja) * 2009-05-13 2011-07-14 シノプシイス インコーポレイテッド 自動作成マスク及び多重マスク層を利用した単一集積回路層のパターン形成
JP2015025917A (ja) * 2013-07-25 2015-02-05 瑞晶電子股ふん有限公司 二重露光のマスク構造及び露光現像の方法

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