JP2001036175A - レーザーダイオード励起固体レーザー - Google Patents
レーザーダイオード励起固体レーザーInfo
- Publication number
- JP2001036175A JP2001036175A JP20657399A JP20657399A JP2001036175A JP 2001036175 A JP2001036175 A JP 2001036175A JP 20657399 A JP20657399 A JP 20657399A JP 20657399 A JP20657399 A JP 20657399A JP 2001036175 A JP2001036175 A JP 2001036175A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- solid
- wavelength
- state laser
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 45
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000007787 solid Substances 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims abstract description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 3
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 6
- 101150050733 Gnas gene Proteins 0.000 claims description 4
- 238000000034 method Methods 0.000 claims 3
- 230000010355 oscillation Effects 0.000 description 17
- 230000005284 excitation Effects 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- CYNYIHKIEHGYOZ-UHFFFAOYSA-N 1-bromopropane Chemical compound CCCBr CYNYIHKIEHGYOZ-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910017768 LaF 3 Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 101100456571 Mus musculus Med12 gene Proteins 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000012921 fluorescence analysis Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Landscapes
- Lasers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20657399A JP2001036175A (ja) | 1999-07-21 | 1999-07-21 | レーザーダイオード励起固体レーザー |
| US09/621,241 US6490309B1 (en) | 1999-07-21 | 2000-07-21 | Laser-diode-pumped laser apparatus in which Pr3+-doped laser medium is pumped with GaN-based compound laser diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20657399A JP2001036175A (ja) | 1999-07-21 | 1999-07-21 | レーザーダイオード励起固体レーザー |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007140809A Division JP2007281499A (ja) | 2007-05-28 | 2007-05-28 | レーザーダイオード励起固体レーザー |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001036175A true JP2001036175A (ja) | 2001-02-09 |
| JP2001036175A5 JP2001036175A5 (enExample) | 2005-06-09 |
Family
ID=16525652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20657399A Pending JP2001036175A (ja) | 1999-07-21 | 1999-07-21 | レーザーダイオード励起固体レーザー |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001036175A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6816532B2 (en) * | 2001-05-15 | 2004-11-09 | Fuji Photo Film Co., Ltd. | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of ho3+, sm3+, eu3+, dy3+, er3+, and tb3+is excited with gan-based compound laser diode |
| JP2007115877A (ja) * | 2005-10-20 | 2007-05-10 | Fujifilm Corp | 固体レーザ装置 |
| WO2010007938A1 (ja) * | 2008-07-16 | 2010-01-21 | セントラル硝子株式会社 | 紫外レーザ装置 |
| US7691765B2 (en) | 2005-03-31 | 2010-04-06 | Fujifilm Corporation | Translucent material and manufacturing method of the same |
-
1999
- 1999-07-21 JP JP20657399A patent/JP2001036175A/ja active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6816532B2 (en) * | 2001-05-15 | 2004-11-09 | Fuji Photo Film Co., Ltd. | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of ho3+, sm3+, eu3+, dy3+, er3+, and tb3+is excited with gan-based compound laser diode |
| US7154930B2 (en) | 2001-05-15 | 2006-12-26 | Fuji Photo Film Co., Ltd. | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode |
| US7356065B2 (en) | 2001-05-15 | 2008-04-08 | Fujifilm Corporation | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode |
| US7362789B2 (en) | 2001-05-15 | 2008-04-22 | Fujifilm Corporation | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode |
| US7403554B2 (en) | 2001-05-15 | 2008-07-22 | Fujifilm Corporation | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode |
| US7411990B2 (en) | 2001-05-15 | 2008-08-12 | Fujifilm Corporation | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode |
| US7418023B2 (en) | 2001-05-15 | 2008-08-26 | Fujifilm Corporation | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, SM3+, EU3+, DY3+, ER3+ and TB3+ is excited with GaN-based compound laser diode |
| US7691765B2 (en) | 2005-03-31 | 2010-04-06 | Fujifilm Corporation | Translucent material and manufacturing method of the same |
| JP2007115877A (ja) * | 2005-10-20 | 2007-05-10 | Fujifilm Corp | 固体レーザ装置 |
| WO2010007938A1 (ja) * | 2008-07-16 | 2010-01-21 | セントラル硝子株式会社 | 紫外レーザ装置 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040902 |
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| A621 | Written request for application examination |
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| A711 | Notification of change in applicant |
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| A131 | Notification of reasons for refusal |
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070226 |
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| A02 | Decision of refusal |
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