JP2000503601A - 共有結合粒子を有する研磨パッドおよび研磨パッドの製造方法 - Google Patents
共有結合粒子を有する研磨パッドおよび研磨パッドの製造方法Info
- Publication number
- JP2000503601A JP2000503601A JP9526256A JP52625697A JP2000503601A JP 2000503601 A JP2000503601 A JP 2000503601A JP 9526256 A JP9526256 A JP 9526256A JP 52625697 A JP52625697 A JP 52625697A JP 2000503601 A JP2000503601 A JP 2000503601A
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- abrasive particles
- matrix material
- particle
- binding molecule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S451/00—Abrading
- Y10S451/921—Pad for lens shaping tool
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.半導体ウエハ研磨パッドであって: ポリマー性マトリクス材料から作製される本体; 該マトリクス材料に共有結合した結合分子;および 該本体全体に実質的に均一な分布で該結合分子に共有結合した研磨粒子を有し 、静電的化学的−機械的平坦化スラリーの存在下で、該研磨粒子と該マトリクス 材料との間の固定を実質的に保持し得る様式で、該結合分子が該研磨粒子を該マ トリクス材料に固定する、研磨パッド。 2.請求項1に記載の研磨パッドであって、各結合分子が反応性末端基と粒子固 定基とからなり、該反応性末端基が前記マトリクス材料に共有結合する該結合分 子の1つの端部での分子セグメントであり、該粒子固定基が研磨粒子に共有結合 する該結合分子の別の端部での別の分子セグメントである、研磨パッド。 3.請求項1に記載の研磨パッドであって、前記マトリクス材料がポリウレタン から作製される、研磨パッド。 4.請求項1に記載の研磨パッドであって、前記研磨粒子が二酸化ケイ素から作 製される、研磨パッド。 5.請求項1に記載の研磨パッドであって、前記研磨粒子が酸化アルミニウムか ら作製される、研磨パッド。 6.請求項2に記載の研磨パッドであって、前記マトリクス材料がポリウレタン から作製され、前記研磨粒子が二酸化ケイ素から作製される、研磨パッド。 7.請求項6に記載の研磨パッドであって、前記反応性末端基がCOOHであり 、前記粒子固定基がトリクロロシランであり、該トリクロロシランが該研磨粒子 上 のヒドロキシル化ケイ素表面と共有結合する、研磨パッド。 8.半導体ウエハの化学的−機械的平坦化に使用するための結合粒子研磨パッド の製造方法であって: 鋳型をマトリクス材料で充填する工程; 分子結合リンクを研磨粒子に共有結合する工程であって、各分子結合リンクが 、該分子結合リンクを該マトリクス材料に共有結合するための反応性末端基およ び該分子結合リンクを研磨粒子に共有結合するための粒子固定基を有する、工程 ; 該結合した研磨粒子および分子結合リンクを該マトリクス材料と混合する工程 であって、該分子結合リンクが該マトリクス材料に共有結合し、該研磨粒子を該 マトリクス材料に確実に固定する、工程;および 該マトリクス材料を硬化させ、研磨粒子が結合したパッド本体を形成する工程 であって、該研磨粒子が該本体全体に実質的に均一に懸濁している、工程 を包含する、製造方法。 9.請求項8に記載の方法であって、前記マトリクス材料がポリマー性材料から 作製される、方法。 10.請求項8に記載の方法であって、前記混合工程が10重量%〜50重量%の結 合した研磨粒子および分子結合リンクを前記マトリクス材料と混合することを含 む、方法。 11.半導体ウエハの化学的−機械的平坦化用の平坦化機械であって: 押板; 該押板上に配置された研磨パッドであって、ポリマー性マトリクス材料から作 製される本体、該マトリクス材料に共有結合した結合分子、および該本体全体に 該結合分子に共有結合した研磨粒子を有し、該結合分子が、静電的化学的−機械 的平坦化スラリーの存在下で、化学的−機械的平坦化の間に該研磨粒子を該マト リクス材料に固定する、研磨パッド;および 該研磨パッド上に配置可能なウエハキャリアであって、該ウエハが該ウエハキ ャリアに取り付け可能であり、ここで該押板または該ウエハキャリアの少なくと も1つが、該ウエハを該研磨パッドに係合するようにかつ該ウエハと研磨パッド との間に運動を与えるように移動可能である、ウエハキャリア を備える平坦化機械。 12.請求項11に記載の平坦化機械であって、各結合分子が反応性末端基と粒 子固定基とからなり、該反応性末端基が前記マトリクス材料に共有結合する該結 合分子の1つの端部での分子セグメントであり、該粒子固定基が研磨粒子に共有 結合する該結合分子の別の端部での別の分子セグメントである、平坦化機械。 13.請求項11に記載の平坦化機械であって、前記マトリクス材料がポリウレ タンから作製される、平坦化機械。 14.請求項11に記載の平坦化機械であって、前記研磨粒子が二酸化ケイ素か ら作製される、平坦化機械。 15.請求項11に記載の平坦化機械であって、前記研磨粒子が酸化アルミニウ ムから作製される、平坦化機械。 16.請求項12に記載の平坦化機械であって、前記マトリクス材料がポリウレ タンから作製され、前記研磨粒子が二酸化ケイ素から作製される、平坦化機械。 17.請求項16に記載の平坦化機械であって、前記反応性末端基がCOOHで あり、前記粒子固定基がトリクロロシランであり、該トリクロロシランが該研磨 粒子上のヒドロキシル化ケイ素表面と共有結合する、平坦化機械。 18.研磨パッドであって: ポリマー性マトリクス材料から作製される本体; 該マトリクス材料に共有結合した非加水分解結合分子;および 該結合分子に共有結合した研磨粒子を有し、該結合分子が化学的−機械的平坦 化の間に該研磨粒子を該マトリクス材料に固定する、研磨パッド。 19.請求項18に記載の研磨パッドであって、前記研磨粒子が蒸気蒸着により 付与された結合分子のコートを有する、研磨パッド。 20.請求項18に記載の研磨パッドであって、各結合分子が反応性末端基と粒 子固定基とからなり、該反応性末端基が前記マトリクス材料に共有結合する該結 合分子の1つの端部での分子セグメントであり、該粒子固定基が研磨粒子に共有 結合する該結合分子の別の端部での別の分子セグメントである、研磨パッド。 21.請求項18に記載の研磨パッドであって、前記マトリクス材料がポリウレ タンであり、前記研磨粒子が二酸化ケイ素であり、各結合分子がCOOHである 反応性末端基とトリクロロシランである粒子固定基とを有し、該反応性末端基が 該マトリクス材料に共有結合する該結合分子の1つの端部での分子セグメントで あり、該粒子固定基が該結合分子の別の端部での別の分子セグメントである、研 磨パッド。 22.研磨パッドであって: ポリマー性マトリクス材料から作製される本体であって、該本体が該研磨パッ ドの約50重量%〜約90重量%である、本体; 該マトリクス材料に共有結合した非加水分解結合分子;および 該結合分子に共有結合した研磨粒子を有し、該結合分子が化学的−機械的平坦 化の間に該研磨粒子を該マトリクス材料に固定し、該研磨粒子が該研磨パッドの 約10重量%〜約50重量%である、研磨パッド。 23.請求項22に記載の研磨パッドであって、前記研磨粒子が蒸気蒸着により 付与された結合分子のコートを有する、研磨パッド。 24.請求項22に記載の研磨パッドであって、前記研磨粒子が該研磨パッドの 約15重量%〜約25重量%である、研磨パッド。 25.請求項22に記載の研磨パッドであって、各結合分子が反応性末端基と粒 子固定基とからなり、該反応性末端基が前記マトリクス材料に共有結合する該結 合分子の1つの端部での分子セグメントであり、該粒子固定基が研磨粒子に共有 結合する該結合分子の別の端部での別の分子セグメントであり、該研磨粒子が該 研磨パッドの約15重量%〜約25重量%である、研磨パッド。 26.請求項22に記載の研磨パッドであって、前記マトリクス材料がポリウレ タンであり、前記研磨粒子が二酸化ケイ素であり、各結合分子がCOOHである 反応性末端基とトリクロロシランである粒子固定基とからなり、該反応性末端基 が該マトリクス材料に共有結合する該結合分子の1つの端部での分子セグメント であり、該粒子固定基が研磨粒子に共有結合する該結合分子の別の端部での別の 分子セグメントである、研磨パッド。 27.研磨パッドであって: ポリマー性マトリクス材料から作製される本体; 該マトリクス材料に共有結合した非加水分解結合分子;および 0.15μm未満の平均粒子サイズを有する研磨粒子であって、該結合分子に共有 結合した、研磨粒子を有し、該結合分子が、静電的化学的−機械的平坦化溶液の 存在下で、化学的−機械的平坦化の間に該研磨粒子を該マトリクス材料に固定す る、研磨パッド。 28.請求項27に記載の研磨パッドであって、前記研磨粒子が0.1μm未満の平 均粒子サイズを有する、研磨パッド。 29.請求項27に記載の研磨パッドであって、前記本体が該研磨パッドの約50 重量%〜約90重量%であり、前記研磨粒子が該研磨パッドの約10重量%〜約50重 量%である、研磨パッド。 30.請求項29に記載の研磨パッドであって、各結合分子が反応性末端基と粒 子固定基とからなり、該反応性末端基が前記マトリクス材料に共有結合する該結 合分子の1つの端部での分子セグメントであり、該粒子固定基が研磨粒子に共結 結合する該結合分子の別の端部での別の分子セグメントである、研磨パッド。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/589,774 US5624303A (en) | 1996-01-22 | 1996-01-22 | Polishing pad and a method for making a polishing pad with covalently bonded particles |
PCT/US1997/000861 WO1997026114A1 (en) | 1996-01-22 | 1997-01-21 | A polishing pad and a method for making a polishing pad with covalently bonded particles |
US08/589,774 | 1998-07-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005195615A Division JP4174607B2 (ja) | 1996-01-22 | 2005-07-04 | 共有結合粒子を有する研磨パッドおよび研磨パッドの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000503601A true JP2000503601A (ja) | 2000-03-28 |
JP4171846B2 JP4171846B2 (ja) | 2008-10-29 |
Family
ID=24359467
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52625697A Expired - Fee Related JP4171846B2 (ja) | 1996-01-22 | 1997-01-21 | 共有給合された粒子を有する研磨パッドおよびその製造方法 |
JP2005195615A Expired - Fee Related JP4174607B2 (ja) | 1996-01-22 | 2005-07-04 | 共有結合粒子を有する研磨パッドおよび研磨パッドの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005195615A Expired - Fee Related JP4174607B2 (ja) | 1996-01-22 | 2005-07-04 | 共有結合粒子を有する研磨パッドおよび研磨パッドの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (3) | US5624303A (ja) |
EP (1) | EP0876242B1 (ja) |
JP (2) | JP4171846B2 (ja) |
KR (1) | KR100459528B1 (ja) |
AT (1) | ATE218413T1 (ja) |
AU (1) | AU1832897A (ja) |
DE (1) | DE69713057T2 (ja) |
WO (1) | WO1997026114A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013520547A (ja) * | 2010-02-24 | 2013-06-06 | ビーエーエスエフ ソシエタス・ヨーロピア | 研磨物品、その製造方法及びその使用方法 |
Families Citing this family (117)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
US5967030A (en) * | 1995-11-17 | 1999-10-19 | Micron Technology, Inc. | Global planarization method and apparatus |
US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
US5692950A (en) * | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
US5972792A (en) * | 1996-10-18 | 1999-10-26 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
US6769967B1 (en) | 1996-10-21 | 2004-08-03 | Micron Technology, Inc. | Apparatus and method for refurbishing polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5782675A (en) * | 1996-10-21 | 1998-07-21 | Micron Technology, Inc. | Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5938801A (en) * | 1997-02-12 | 1999-08-17 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US6062958A (en) * | 1997-04-04 | 2000-05-16 | Micron Technology, Inc. | Variable abrasive polishing pad for mechanical and chemical-mechanical planarization |
US6194317B1 (en) | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
US8092707B2 (en) | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
US6316363B1 (en) | 1999-09-02 | 2001-11-13 | Micron Technology, Inc. | Deadhesion method and mechanism for wafer processing |
US6331488B1 (en) * | 1997-05-23 | 2001-12-18 | Micron Technology, Inc. | Planarization process for semiconductor substrates |
US5919082A (en) * | 1997-08-22 | 1999-07-06 | Micron Technology, Inc. | Fixed abrasive polishing pad |
US6780095B1 (en) | 1997-12-30 | 2004-08-24 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6139402A (en) * | 1997-12-30 | 2000-10-31 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US5897426A (en) | 1998-04-24 | 1999-04-27 | Applied Materials, Inc. | Chemical mechanical polishing with multiple polishing pads |
US6210257B1 (en) * | 1998-05-29 | 2001-04-03 | Micron Technology, Inc. | Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6220934B1 (en) * | 1998-07-23 | 2001-04-24 | Micron Technology, Inc. | Method for controlling pH during planarization and cleaning of microelectronic substrates |
US6036586A (en) | 1998-07-29 | 2000-03-14 | Micron Technology, Inc. | Apparatus and method for reducing removal forces for CMP pads |
JP3770752B2 (ja) | 1998-08-11 | 2006-04-26 | 株式会社日立製作所 | 半導体装置の製造方法及び加工装置 |
US6080671A (en) * | 1998-08-18 | 2000-06-27 | Lucent Technologies Inc. | Process of chemical-mechanical polishing and manufacturing an integrated circuit |
US6218316B1 (en) | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6390890B1 (en) | 1999-02-06 | 2002-05-21 | Charles J Molnar | Finishing semiconductor wafers with a fixed abrasive finishing element |
FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
US6206756B1 (en) | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6276996B1 (en) | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6413153B1 (en) | 1999-04-26 | 2002-07-02 | Beaver Creek Concepts Inc | Finishing element including discrete finishing members |
US6641463B1 (en) | 1999-02-06 | 2003-11-04 | Beaver Creek Concepts Inc | Finishing components and elements |
US6322427B1 (en) * | 1999-04-30 | 2001-11-27 | Applied Materials, Inc. | Conditioning fixed abrasive articles |
US20020077037A1 (en) * | 1999-05-03 | 2002-06-20 | Tietz James V. | Fixed abrasive articles |
US6419554B2 (en) | 1999-06-24 | 2002-07-16 | Micron Technology, Inc. | Fixed abrasive chemical-mechanical planarization of titanium nitride |
JP3117438B1 (ja) * | 1999-06-24 | 2000-12-11 | 日本ミクロコーティング株式会社 | 化学的機械的テクスチャ加工方法 |
US6267650B1 (en) | 1999-08-09 | 2001-07-31 | Micron Technology, Inc. | Apparatus and methods for substantial planarization of solder bumps |
US6331135B1 (en) * | 1999-08-31 | 2001-12-18 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives |
US6306008B1 (en) | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
US6383934B1 (en) | 1999-09-02 | 2002-05-07 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
US6364749B1 (en) | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | CMP polishing pad with hydrophilic surfaces for enhanced wetting |
JP3439402B2 (ja) * | 1999-11-05 | 2003-08-25 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6306768B1 (en) | 1999-11-17 | 2001-10-23 | Micron Technology, Inc. | Method for planarizing microelectronic substrates having apertures |
US6498101B1 (en) | 2000-02-28 | 2002-12-24 | Micron Technology, Inc. | Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies |
US6517414B1 (en) | 2000-03-10 | 2003-02-11 | Appied Materials, Inc. | Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus |
US6290572B1 (en) | 2000-03-23 | 2001-09-18 | Micron Technology, Inc. | Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6616513B1 (en) | 2000-04-07 | 2003-09-09 | Applied Materials, Inc. | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
US6443810B1 (en) * | 2000-04-11 | 2002-09-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polishing platen equipped with guard ring for chemical mechanical polishing |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US6612901B1 (en) | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6428386B1 (en) | 2000-06-16 | 2002-08-06 | Micron Technology, Inc. | Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6872329B2 (en) | 2000-07-28 | 2005-03-29 | Applied Materials, Inc. | Chemical mechanical polishing composition and process |
US6520834B1 (en) * | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6736869B1 (en) * | 2000-08-28 | 2004-05-18 | Micron Technology, Inc. | Method for forming a planarizing pad for planarization of microelectronic substrates |
US6838382B1 (en) * | 2000-08-28 | 2005-01-04 | Micron Technology, Inc. | Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates |
US6518172B1 (en) | 2000-08-29 | 2003-02-11 | Micron Technology, Inc. | Method for applying uniform pressurized film across wafer |
US6447369B1 (en) | 2000-08-30 | 2002-09-10 | Micron Technology, Inc. | Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates |
US6592443B1 (en) | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6609947B1 (en) | 2000-08-30 | 2003-08-26 | Micron Technology, Inc. | Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates |
US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6623329B1 (en) | 2000-08-31 | 2003-09-23 | Micron Technology, Inc. | Method and apparatus for supporting a microelectronic substrate relative to a planarization pad |
US6579604B2 (en) | 2000-11-29 | 2003-06-17 | Psiloquest Inc. | Method of altering and preserving the surface properties of a polishing pad and specific applications therefor |
US6596388B1 (en) | 2000-11-29 | 2003-07-22 | Psiloquest | Method of introducing organic and inorganic grafted compounds throughout a thermoplastic polishing pad using a supercritical fluid and applications therefor |
US6706383B1 (en) | 2001-11-27 | 2004-03-16 | Psiloquest, Inc. | Polishing pad support that improves polishing performance and longevity |
US7059946B1 (en) | 2000-11-29 | 2006-06-13 | Psiloquest Inc. | Compacted polishing pads for improved chemical mechanical polishing longevity |
US6846225B2 (en) * | 2000-11-29 | 2005-01-25 | Psiloquest, Inc. | Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor |
US6684704B1 (en) | 2002-09-12 | 2004-02-03 | Psiloquest, Inc. | Measuring the surface properties of polishing pads using ultrasonic reflectance |
US20050266226A1 (en) * | 2000-11-29 | 2005-12-01 | Psiloquest | Chemical mechanical polishing pad and method for selective metal and barrier polishing |
KR20020055308A (ko) * | 2000-12-28 | 2002-07-08 | 박종섭 | 화학적 기계적 연마용 패드 및 그 제조 방법 |
US6672943B2 (en) * | 2001-01-26 | 2004-01-06 | Wafer Solutions, Inc. | Eccentric abrasive wheel for wafer processing |
US6764574B1 (en) | 2001-03-06 | 2004-07-20 | Psiloquest | Polishing pad composition and method of use |
US6575823B1 (en) | 2001-03-06 | 2003-06-10 | Psiloquest Inc. | Polishing pad and method for in situ delivery of chemical mechanical polishing slurry modifiers and applications thereof |
US6632012B2 (en) | 2001-03-30 | 2003-10-14 | Wafer Solutions, Inc. | Mixing manifold for multiple inlet chemistry fluids |
US6818301B2 (en) * | 2001-06-01 | 2004-11-16 | Psiloquest Inc. | Thermal management with filled polymeric polishing pads and applications therefor |
KR100429691B1 (ko) * | 2001-06-13 | 2004-05-03 | 동성에이앤티 주식회사 | 미세기공 함유 연마패드 및 그 제조방법 |
US6866566B2 (en) * | 2001-08-24 | 2005-03-15 | Micron Technology, Inc. | Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces |
US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US6666749B2 (en) | 2001-08-30 | 2003-12-23 | Micron Technology, Inc. | Apparatus and method for enhanced processing of microelectronic workpieces |
US6659846B2 (en) * | 2001-09-17 | 2003-12-09 | Agere Systems, Inc. | Pad for chemical mechanical polishing |
WO2003104344A1 (en) * | 2002-06-05 | 2003-12-18 | Arizona Board Of Regents | Abrasive particles to clean semiconductor wafers during chemical mechanical planarization |
US7341502B2 (en) * | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US6838169B2 (en) * | 2002-09-11 | 2005-01-04 | Psiloquest, Inc. | Polishing pad resistant to delamination |
KR100495404B1 (ko) * | 2002-09-17 | 2005-06-14 | 한국포리올 주식회사 | 임베디드 액상 미소요소를 함유하는 연마 패드 및 그 제조방법 |
DE10255652B4 (de) * | 2002-11-28 | 2005-07-14 | Infineon Technologies Ag | Schleifkissen, Vorrichtung zum chemisch-mechanischen Polieren und Verfahren zum nasschemischen Schleifen einer Substratoberfläche |
US6884152B2 (en) | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
US7141155B2 (en) * | 2003-02-18 | 2006-11-28 | Parker-Hannifin Corporation | Polishing article for electro-chemical mechanical polishing |
US7066801B2 (en) * | 2003-02-21 | 2006-06-27 | Dow Global Technologies, Inc. | Method of manufacturing a fixed abrasive material |
US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
US6935929B2 (en) | 2003-04-28 | 2005-08-30 | Micron Technology, Inc. | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
US7030603B2 (en) * | 2003-08-21 | 2006-04-18 | Micron Technology, Inc. | Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece |
TW200525017A (en) * | 2003-09-15 | 2005-08-01 | Psiloquest Inc | A polishing pad for chemical mechanical polishing |
US7086927B2 (en) * | 2004-03-09 | 2006-08-08 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7066792B2 (en) * | 2004-08-06 | 2006-06-27 | Micron Technology, Inc. | Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods |
US8075372B2 (en) * | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
US20060154579A1 (en) * | 2005-01-12 | 2006-07-13 | Psiloquest | Thermoplastic chemical mechanical polishing pad and method of manufacture |
US7264539B2 (en) * | 2005-07-13 | 2007-09-04 | Micron Technology, Inc. | Systems and methods for removing microfeature workpiece surface defects |
US7294049B2 (en) * | 2005-09-01 | 2007-11-13 | Micron Technology, Inc. | Method and apparatus for removing material from microfeature workpieces |
DE102007035266B4 (de) * | 2007-07-27 | 2010-03-25 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium |
CN102138203B (zh) | 2008-08-28 | 2015-02-04 | 3M创新有限公司 | 结构化磨料制品、其制备方法、及其在晶片平面化中的用途 |
KR101701152B1 (ko) * | 2009-09-02 | 2017-02-01 | 주식회사 동진쎄미켐 | 돌기를 갖는 나노파이버를 함유한 연마패드 |
US8628384B2 (en) * | 2010-09-30 | 2014-01-14 | Nexplanar Corporation | Polishing pad for eddy current end-point detection |
US8657653B2 (en) | 2010-09-30 | 2014-02-25 | Nexplanar Corporation | Homogeneous polishing pad for eddy current end-point detection |
US20120302148A1 (en) * | 2011-05-23 | 2012-11-29 | Rajeev Bajaj | Polishing pad with homogeneous body having discrete protrusions thereon |
US9067298B2 (en) * | 2011-11-29 | 2015-06-30 | Nexplanar Corporation | Polishing pad with grooved foundation layer and polishing surface layer |
JP6309453B2 (ja) * | 2011-11-29 | 2018-04-11 | キャボット マイクロエレクトロニクス コーポレイション | 下地層および研磨表面層を有する研磨パッド |
US9067297B2 (en) | 2011-11-29 | 2015-06-30 | Nexplanar Corporation | Polishing pad with foundation layer and polishing surface layer |
US9597769B2 (en) | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
SG11201703114QA (en) | 2014-10-17 | 2017-06-29 | Applied Materials Inc | Cmp pad construction with composite material properties using additive manufacturing processes |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US9776361B2 (en) * | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP7204756B2 (ja) | 2017-12-29 | 2023-01-16 | サンーゴバン アブレイシブズ,インコーポレイティド | 研磨バフ物品 |
WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
US11813712B2 (en) | 2019-12-20 | 2023-11-14 | Applied Materials, Inc. | Polishing pads having selectively arranged porosity |
US11806829B2 (en) | 2020-06-19 | 2023-11-07 | Applied Materials, Inc. | Advanced polishing pads and related polishing pad manufacturing methods |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6234781A (ja) * | 1985-08-07 | 1987-02-14 | ミネソタ マイニング アンド マニユフアクチユアリング コンパニ− | 被覆研磨材 |
JPH02139478A (ja) * | 1988-08-10 | 1990-05-29 | Kanebo Ltd | セルロース系繊維品およびその製法 |
JPH02191768A (ja) * | 1988-08-10 | 1990-07-27 | Kanebo Ltd | セルロース系繊維の糸染め製品およびその製法 |
JPH05293766A (ja) * | 1992-04-20 | 1993-11-09 | Fuji Photo Film Co Ltd | 研磨体 |
JPH06199982A (ja) * | 1992-11-09 | 1994-07-19 | Norton Co | 研削砥石用ポリウレタン系バインダー |
JPH06308312A (ja) * | 1993-04-26 | 1994-11-04 | Canon Inc | カラーフィルターの製造方法 |
JPH0788171A (ja) * | 1993-06-18 | 1995-04-04 | Sanyo Chem Ind Ltd | 紙おむつ用吸収剤組成物 |
JPH07266219A (ja) * | 1994-03-25 | 1995-10-17 | Mitsubishi Materials Corp | ウェーハ研磨装置 |
JPH07321076A (ja) * | 1994-05-24 | 1995-12-08 | Toshiba Corp | 半導体装置の製造方法と研磨装置 |
JPH08500271A (ja) * | 1992-08-17 | 1996-01-16 | ウェヤーハウザー・カンパニー | 粒子バインダー |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US202757A (en) * | 1878-04-23 | Improvement in table-cutlery | ||
US2185942A (en) * | 1939-04-11 | 1940-01-02 | Frank Charles William | Table service |
JPS4810368B1 (ja) * | 1968-11-19 | 1973-04-03 | ||
DE3231144A1 (de) * | 1982-08-21 | 1984-02-23 | Basf Ag, 6700 Ludwigshafen | Verfahren zur herstellung von tiefdruckformen mit kunststoff-druckschichten |
DE3479783D1 (en) * | 1983-03-09 | 1989-10-26 | Howmedica Int Inc | Anchorage nail |
FR2580656B1 (fr) * | 1985-04-23 | 1987-09-11 | Charbonnages Ste Chimique | Compositions thermoplastiques multiphases et articles obtenus |
CA1263240A (en) * | 1985-12-16 | 1989-11-28 | Minnesota Mining And Manufacturing Company | Coated abrasive suitable for use as a lapping material |
JPH02186656A (ja) * | 1989-01-13 | 1990-07-20 | Hitachi Ltd | 低発塵装置 |
US4954142A (en) * | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
US5127196A (en) * | 1990-03-01 | 1992-07-07 | Intel Corporation | Apparatus for planarizing a dielectric formed over a semiconductor substrate |
US5197999A (en) * | 1991-09-30 | 1993-03-30 | National Semiconductor Corporation | Polishing pad for planarization |
US5213588A (en) * | 1992-02-04 | 1993-05-25 | The Procter & Gamble Company | Abrasive wiping articles and a process for preparing such articles |
MY114512A (en) * | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
US5250085A (en) * | 1993-01-15 | 1993-10-05 | Minnesota Mining And Manufacturing Company | Flexible bonded abrasive articles, methods of production and use |
US5433650A (en) * | 1993-05-03 | 1995-07-18 | Motorola, Inc. | Method for polishing a substrate |
GB9316021D0 (en) * | 1993-08-03 | 1993-09-15 | Exxon Chemical Patents Inc | Additive for hydrocarbon oils |
JP3326642B2 (ja) * | 1993-11-09 | 2002-09-24 | ソニー株式会社 | 基板の研磨後処理方法およびこれに用いる研磨装置 |
JP2894208B2 (ja) * | 1994-06-02 | 1999-05-24 | 信越半導体株式会社 | シリコンウェーハ研磨用研磨剤及び研磨方法 |
US5672095A (en) * | 1995-09-29 | 1997-09-30 | Intel Corporation | Elimination of pad conditioning in a chemical mechanical polishing process |
US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
-
1996
- 1996-01-22 US US08/589,774 patent/US5624303A/en not_active Expired - Lifetime
-
1997
- 1997-01-21 EP EP97903862A patent/EP0876242B1/en not_active Expired - Lifetime
- 1997-01-21 AU AU18328/97A patent/AU1832897A/en not_active Abandoned
- 1997-01-21 KR KR10-1998-0705588A patent/KR100459528B1/ko not_active IP Right Cessation
- 1997-01-21 DE DE69713057T patent/DE69713057T2/de not_active Expired - Lifetime
- 1997-01-21 WO PCT/US1997/000861 patent/WO1997026114A1/en active IP Right Grant
- 1997-01-21 JP JP52625697A patent/JP4171846B2/ja not_active Expired - Fee Related
- 1997-01-21 AT AT97903862T patent/ATE218413T1/de not_active IP Right Cessation
- 1997-02-12 US US08/798,001 patent/US5823855A/en not_active Expired - Lifetime
- 1997-04-09 US US08/838,394 patent/US5879222A/en not_active Expired - Lifetime
-
2005
- 2005-07-04 JP JP2005195615A patent/JP4174607B2/ja not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6234781A (ja) * | 1985-08-07 | 1987-02-14 | ミネソタ マイニング アンド マニユフアクチユアリング コンパニ− | 被覆研磨材 |
JPH02139478A (ja) * | 1988-08-10 | 1990-05-29 | Kanebo Ltd | セルロース系繊維品およびその製法 |
JPH02191768A (ja) * | 1988-08-10 | 1990-07-27 | Kanebo Ltd | セルロース系繊維の糸染め製品およびその製法 |
JPH05293766A (ja) * | 1992-04-20 | 1993-11-09 | Fuji Photo Film Co Ltd | 研磨体 |
JPH08500271A (ja) * | 1992-08-17 | 1996-01-16 | ウェヤーハウザー・カンパニー | 粒子バインダー |
JPH08500270A (ja) * | 1992-08-17 | 1996-01-16 | ウェヤーハウザー・カンパニー | 繊維に対する粒子結合 |
JPH06199982A (ja) * | 1992-11-09 | 1994-07-19 | Norton Co | 研削砥石用ポリウレタン系バインダー |
JPH06308312A (ja) * | 1993-04-26 | 1994-11-04 | Canon Inc | カラーフィルターの製造方法 |
JPH0788171A (ja) * | 1993-06-18 | 1995-04-04 | Sanyo Chem Ind Ltd | 紙おむつ用吸収剤組成物 |
JPH07266219A (ja) * | 1994-03-25 | 1995-10-17 | Mitsubishi Materials Corp | ウェーハ研磨装置 |
JPH07321076A (ja) * | 1994-05-24 | 1995-12-08 | Toshiba Corp | 半導体装置の製造方法と研磨装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013520547A (ja) * | 2010-02-24 | 2013-06-06 | ビーエーエスエフ ソシエタス・ヨーロピア | 研磨物品、その製造方法及びその使用方法 |
US9309448B2 (en) | 2010-02-24 | 2016-04-12 | Basf Se | Abrasive articles, method for their preparation and method of their use |
Also Published As
Publication number | Publication date |
---|---|
JP4171846B2 (ja) | 2008-10-29 |
JP2006013523A (ja) | 2006-01-12 |
EP0876242B1 (en) | 2002-06-05 |
WO1997026114A1 (en) | 1997-07-24 |
US5823855A (en) | 1998-10-20 |
DE69713057T2 (de) | 2003-01-23 |
KR19990081877A (ko) | 1999-11-15 |
ATE218413T1 (de) | 2002-06-15 |
EP0876242A1 (en) | 1998-11-11 |
US5879222A (en) | 1999-03-09 |
DE69713057D1 (de) | 2002-07-11 |
US5624303A (en) | 1997-04-29 |
KR100459528B1 (ko) | 2005-06-02 |
AU1832897A (en) | 1997-08-11 |
JP4174607B2 (ja) | 2008-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2000503601A (ja) | 共有結合粒子を有する研磨パッドおよび研磨パッドの製造方法 | |
US5938801A (en) | Polishing pad and a method for making a polishing pad with covalently bonded particles | |
US6488570B1 (en) | Method relating to a polishing system having a multi-phase polishing layer | |
US6548407B1 (en) | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates | |
KR100295335B1 (ko) | 점도가감소된슬러리,그로부터제조된염마재물품,및이물품의제조방법 | |
JP2001517558A (ja) | ウエハ表面改質用にフルオロケミカル剤を含有する研磨物品 | |
JPH11512874A (ja) | 半導体ウェーハの露出面を改質する方法 | |
US20020018848A1 (en) | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines | |
JP2002526594A (ja) | 低誘電率材料のための酸化性研磨スラリー | |
JP2001522729A (ja) | 研磨剤研磨システムを使用したメモリーディスクあるいは半導体デバイスの製造方法及び研磨パッド | |
WO2007025226A1 (en) | Polishing pad and method for manufacturing polishing pads | |
US6464740B1 (en) | Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials | |
KR20090091302A (ko) | 나노미립자 충전재를 갖는 연마 용품 및 그 제조 및 사용 방법 | |
US6659846B2 (en) | Pad for chemical mechanical polishing | |
JPH11512978A (ja) | 電子装置の化学機械的平坦化のための方法および装置 | |
US6039631A (en) | Polishing method, abrasive material, and polishing apparatus | |
CN113442056A (zh) | 一种抛光垫及其制备方法、半导体器件的制造方法 | |
US6723143B2 (en) | Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials | |
US6702866B2 (en) | Homogeneous fixed abrasive polishing pad | |
KR100789068B1 (ko) | 연마 패드 및 그의 제조방법 | |
JP2004074330A (ja) | 固定砥粒研磨工具およびその製造方法 | |
TWI777176B (zh) | 封裝基板的平面化方法 | |
JP4024622B2 (ja) | 研磨剤用キャリア粒子組成物および研磨剤 | |
JP4167440B2 (ja) | 研磨剤およびキャリア粒子 | |
JP4688397B2 (ja) | キャリア粒子の取扱い方法および研磨剤 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050104 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20050404 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20050530 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050704 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060207 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20060502 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20060619 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060621 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061017 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070115 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20070628 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20070725 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080122 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080422 |
|
A72 | Notification of change in name of applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A721 Effective date: 20080422 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20080422 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080513 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080609 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080708 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080729 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110822 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110822 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120822 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130822 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |