JP2000307109A5 - - Google Patents

Download PDF

Info

Publication number
JP2000307109A5
JP2000307109A5 JP1999114590A JP11459099A JP2000307109A5 JP 2000307109 A5 JP2000307109 A5 JP 2000307109A5 JP 1999114590 A JP1999114590 A JP 1999114590A JP 11459099 A JP11459099 A JP 11459099A JP 2000307109 A5 JP2000307109 A5 JP 2000307109A5
Authority
JP
Japan
Prior art keywords
semiconductor
gap
insulating film
semiconductor substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999114590A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000307109A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11114590A priority Critical patent/JP2000307109A/ja
Priority claimed from JP11114590A external-priority patent/JP2000307109A/ja
Publication of JP2000307109A publication Critical patent/JP2000307109A/ja
Publication of JP2000307109A5 publication Critical patent/JP2000307109A5/ja
Pending legal-status Critical Current

Links

JP11114590A 1999-04-22 1999-04-22 半導体装置及びその製造方法 Pending JP2000307109A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11114590A JP2000307109A (ja) 1999-04-22 1999-04-22 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11114590A JP2000307109A (ja) 1999-04-22 1999-04-22 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009021362A Division JP2009124169A (ja) 2009-02-02 2009-02-02 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2000307109A JP2000307109A (ja) 2000-11-02
JP2000307109A5 true JP2000307109A5 (enExample) 2005-09-02

Family

ID=14641677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11114590A Pending JP2000307109A (ja) 1999-04-22 1999-04-22 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2000307109A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4955222B2 (ja) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2008085188A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置

Similar Documents

Publication Publication Date Title
JP4539773B2 (ja) 半導体装置およびその製造方法
US3959579A (en) Apertured semi-conductor device mounted on a substrate
US8487371B2 (en) Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
JP2004207723A (ja) フリップチップｆｅｔ素子
CN106941091B (zh) 内连线结构、内连线布局结构及其制作方法
JP2002158350A5 (enExample)
US7663244B2 (en) Semiconductor device and semiconductor wafer and a method for manufacturing the same
US20080224257A1 (en) Semiconductor device
JP3677346B2 (ja) 電界効果により制御可能の半導体デバイス
KR100990549B1 (ko) 반도체 소자 및 그 제조 방법
EP3065171A2 (en) Electronic device and electronic package thereof
US20140246722A1 (en) Power MOS Transistor with Improved Metal Contact
JP2000307109A5 (enExample)
JPH08274228A (ja) 半導体搭載基板、電力用半導体装置及び電子回路装置
JP2008258578A (ja) 半導体装置
JP3036256B2 (ja) 半導体装置
JP3441104B2 (ja) 半導体装置
TWI841994B (zh) 半導體測試結構及其形成方法
JP7748347B2 (ja) 半導体装置及び半導体装置の製造方法
US7696626B2 (en) Semiconductor device and method of arranging pad thereof
JP2009111073A (ja) 半導体装置
KR100702119B1 (ko) 반도체소자의 본딩패드 및 그 제조방법
KR20020080234A (ko) 반도체장치
JPS605060B2 (ja) 半導体集積回路装置
TW200612530A (en) Method for fabricating thermally enhanced and directly connected semiconductor device