JP2000269466A5 - - Google Patents

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Publication number
JP2000269466A5
JP2000269466A5 JP1999068017A JP6801799A JP2000269466A5 JP 2000269466 A5 JP2000269466 A5 JP 2000269466A5 JP 1999068017 A JP1999068017 A JP 1999068017A JP 6801799 A JP6801799 A JP 6801799A JP 2000269466 A5 JP2000269466 A5 JP 2000269466A5
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JP
Japan
Prior art keywords
insulating film
forming
opening
mask
formation region
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Application number
JP1999068017A
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English (en)
Japanese (ja)
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JP4270633B2 (ja
JP2000269466A (ja
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Application filed filed Critical
Priority to JP06801799A priority Critical patent/JP4270633B2/ja
Priority claimed from JP06801799A external-priority patent/JP4270633B2/ja
Priority to US09/521,969 priority patent/US6281050B1/en
Publication of JP2000269466A publication Critical patent/JP2000269466A/ja
Publication of JP2000269466A5 publication Critical patent/JP2000269466A5/ja
Application granted granted Critical
Publication of JP4270633B2 publication Critical patent/JP4270633B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP06801799A 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法 Expired - Fee Related JP4270633B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP06801799A JP4270633B2 (ja) 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法
US09/521,969 US6281050B1 (en) 1999-03-15 2000-03-09 Manufacturing method of a semiconductor device and a nonvolatile semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06801799A JP4270633B2 (ja) 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000269466A JP2000269466A (ja) 2000-09-29
JP2000269466A5 true JP2000269466A5 (enrdf_load_stackoverflow) 2005-06-09
JP4270633B2 JP4270633B2 (ja) 2009-06-03

Family

ID=13361647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06801799A Expired - Fee Related JP4270633B2 (ja) 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JP4270633B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672197B2 (ja) * 2001-07-04 2011-04-20 株式会社東芝 半導体記憶装置の製造方法
KR100466195B1 (ko) * 2002-07-18 2005-01-13 주식회사 하이닉스반도체 플래시 메모리 제조방법
JP2004228421A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
US7119403B2 (en) 2003-10-16 2006-10-10 International Business Machines Corporation High performance strained CMOS devices
JP4282517B2 (ja) 2004-03-19 2009-06-24 株式会社東芝 不揮発性半導体記憶装置の製造方法
KR100781033B1 (ko) 2005-05-12 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100712597B1 (ko) 2006-02-07 2007-05-02 삼성전자주식회사 비휘발성 기억 소자의 형성 방법
CN100547768C (zh) * 2006-12-19 2009-10-07 力晶半导体股份有限公司 非易失性存储器的制作方法
JP5242114B2 (ja) * 2007-10-04 2013-07-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7674684B2 (en) * 2008-07-23 2010-03-09 Applied Materials, Inc. Deposition methods for releasing stress buildup

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