JP2000260709A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000260709A5 JP2000260709A5 JP1999061082A JP6108299A JP2000260709A5 JP 2000260709 A5 JP2000260709 A5 JP 2000260709A5 JP 1999061082 A JP1999061082 A JP 1999061082A JP 6108299 A JP6108299 A JP 6108299A JP 2000260709 A5 JP2000260709 A5 JP 2000260709A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- region
- semiconductor thin
- insulating film
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 25
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000005712 crystallization Effects 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 230000001678 irradiating Effects 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11061082A JP2000260709A (ja) | 1999-03-09 | 1999-03-09 | 半導体薄膜の結晶化方法及びそれを用いた半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11061082A JP2000260709A (ja) | 1999-03-09 | 1999-03-09 | 半導体薄膜の結晶化方法及びそれを用いた半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000260709A JP2000260709A (ja) | 2000-09-22 |
| JP2000260709A5 true JP2000260709A5 (de) | 2005-06-16 |
Family
ID=13160846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11061082A Pending JP2000260709A (ja) | 1999-03-09 | 1999-03-09 | 半導体薄膜の結晶化方法及びそれを用いた半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000260709A (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7217605B2 (en) * | 2000-11-29 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method of manufacturing a semiconductor device |
| JP2007123910A (ja) * | 2000-11-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタの作製方法 |
| JP4642310B2 (ja) * | 2001-04-06 | 2011-03-02 | セイコーエプソン株式会社 | 薄膜半導体装置の製造方法および薄膜半導体装置 |
| TW589667B (en) | 2001-09-25 | 2004-06-01 | Sharp Kk | Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof |
| JP2004207691A (ja) * | 2002-12-11 | 2004-07-22 | Sharp Corp | 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置 |
| JP2005045209A (ja) * | 2003-07-09 | 2005-02-17 | Mitsubishi Electric Corp | レーザアニール方法 |
| JP2005175211A (ja) * | 2003-12-11 | 2005-06-30 | Sharp Corp | 半導体膜の製造方法および製造装置 |
| JP2005209927A (ja) * | 2004-01-23 | 2005-08-04 | Sharp Corp | 半導体薄膜の製造方法 |
| JP2007095989A (ja) * | 2005-09-29 | 2007-04-12 | Dainippon Printing Co Ltd | 薄膜トランジスタの製造方法 |
| JP2011014841A (ja) * | 2009-07-06 | 2011-01-20 | Kaneka Corp | 積層型光電変換装置の製造方法 |
| WO2013031198A1 (ja) | 2011-08-30 | 2013-03-07 | パナソニック株式会社 | 薄膜形成基板の製造方法、薄膜素子基板の製造方法、薄膜基板及び薄膜素子基板 |
| JP7203417B2 (ja) * | 2019-01-31 | 2023-01-13 | 株式会社ブイ・テクノロジー | レーザアニール方法、レーザアニール装置、およびｔｆｔ基板 |
-
1999
- 1999-03-09 JP JP11061082A patent/JP2000260709A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5683935A (en) | Method of growing semiconductor crystal | |
| US5766989A (en) | Method for forming polycrystalline thin film and method for fabricating thin-film transistor | |
| JP3204986B2 (ja) | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス | |
| JP3586558B2 (ja) | 薄膜の改質方法及びその実施に使用する装置 | |
| TWI402989B (zh) | 形成多晶矽薄膜之方法及使用該方法以製造薄膜電晶體之方法 | |
| TW527731B (en) | Method for crystallizing silicon layer | |
| KR100285796B1 (ko) | 반도체 장치의 제조 방법 및 반도체 장치 | |
| KR100392120B1 (ko) | 다결정 실리콘 막의 형성 방법 | |
| JPH07235490A (ja) | 多結晶シリコン薄膜形成方法およびｍｏｓトランジスタのチャネル形成方法 | |
| JP2000260709A5 (de) | ||
| JP4084039B2 (ja) | 薄膜半導体装置及びその製造方法 | |
| JP4203141B2 (ja) | 非晶質シリコン層の結晶化方法及びこれを使用する薄膜トランジスターの製造方法 | |
| JP2000260709A (ja) | 半導体薄膜の結晶化方法及びそれを用いた半導体装置 | |
| JPS60150618A (ja) | 半導体装置の製造方法 | |
| US20030193068A1 (en) | Thin film transistor (tft) and method for fabricating the tft | |
| US4678538A (en) | Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects | |
| EP0575965B1 (de) | Verfahren zur Herstellung eines Halbleiter-Kristalls und Halbleiteranordnung | |
| JP2809152B2 (ja) | 薄膜トランジスタの製造方法 | |
| KR20030015617A (ko) | 결정질 실리콘의 제조방법 | |
| KR100761346B1 (ko) | 결정질 실리콘의 제조방법 | |
| US7714367B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP4075042B2 (ja) | 半導体装置の製造方法およびこの方法で得られる半導体装置 | |
| JPH08293464A (ja) | 半導体基板及び半導体装置の製造方法 | |
| JP2003151904A (ja) | 半導体薄膜の結晶化方法、半導体薄膜、及び、薄膜半導体装置 | |
| KR100379685B1 (ko) | 실리콘층의평탄화방법 |