KR100280288B1
(ko)
*
|
1999-02-04 |
2001-01-15 |
윤종용 |
반도체 집적회로의 커패시터 제조방법
|
US6927160B1
(en)
*
|
1999-06-09 |
2005-08-09 |
National Semiconductor Corporation |
Fabrication of copper-containing region such as electrical interconnect
|
KR100308125B1
(ko)
*
|
1999-07-05 |
2001-11-01 |
김영환 |
불휘발성 강유전체 메모리소자 및 그 제조방법
|
DE10022655C2
(de)
*
|
2000-04-28 |
2002-03-07 |
Infineon Technologies Ag |
Verfahren zur Herstellung von Kondensatorstrukturen
|
US6597028B2
(en)
*
|
2000-06-26 |
2003-07-22 |
Ramtron International Corporation |
Capacitively coupled ferroelectric random access memory cell and a method for manufacturing the same
|
US6366489B1
(en)
*
|
2000-08-31 |
2002-04-02 |
Micron Technology, Inc. |
Bi-state ferroelectric memory devices, uses and operation
|
US6737728B1
(en)
*
|
2000-10-12 |
2004-05-18 |
Intel Corporation |
On-chip decoupling capacitor and method of making same
|
US6794694B2
(en)
*
|
2000-12-21 |
2004-09-21 |
Agere Systems Inc. |
Inter-wiring-layer capacitors
|
US6710425B2
(en)
*
|
2001-04-26 |
2004-03-23 |
Zeevo, Inc. |
Structure to increase density of MIM capacitors between adjacent metal layers in an integrated circuit
|
FR2824423B1
(fr)
*
|
2001-05-02 |
2003-09-05 |
St Microelectronics Sa |
Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre
|
US6900498B2
(en)
*
|
2001-05-08 |
2005-05-31 |
Advanced Technology Materials, Inc. |
Barrier structures for integration of high K oxides with Cu and Al electrodes
|
FR2828764B1
(fr)
*
|
2001-08-16 |
2004-01-23 |
St Microelectronics Sa |
Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit
|
US6673664B2
(en)
*
|
2001-10-16 |
2004-01-06 |
Sharp Laboratories Of America, Inc. |
Method of making a self-aligned ferroelectric memory transistor
|
DE60140757D1
(de)
*
|
2001-12-28 |
2010-01-21 |
St Microelectronics Srl |
Kondensator für integrierte Halbleiterbauelemente
|
JP2003289134A
(ja)
|
2002-03-28 |
2003-10-10 |
Matsushita Electric Ind Co Ltd |
半導体装置及びその製造方法
|
US6706632B2
(en)
*
|
2002-04-25 |
2004-03-16 |
Micron Technology, Inc. |
Methods for forming capacitor structures; and methods for removal of organic materials
|
US6611449B1
(en)
*
|
2002-09-24 |
2003-08-26 |
Infineon Technologies Aktiengesellschaft |
Contact for memory cells
|
US6858442B2
(en)
*
|
2003-02-25 |
2005-02-22 |
Infineon Technologies Aktiengesellschaft |
Ferroelectric memory integrated circuit with improved reliability
|
US6720232B1
(en)
*
|
2003-04-10 |
2004-04-13 |
Taiwan Semiconductor Manufacturing Company |
Method of fabricating an embedded DRAM for metal-insulator-metal (MIM) capacitor structure
|
JP2005093714A
(ja)
*
|
2003-09-17 |
2005-04-07 |
Nec Electronics Corp |
半導体装置およびその製造方法
|
JP4041785B2
(ja)
*
|
2003-09-26 |
2008-01-30 |
松下電器産業株式会社 |
半導体装置の製造方法
|
KR100572382B1
(ko)
*
|
2003-11-21 |
2006-04-18 |
삼성전자주식회사 |
반도체 장치의 커패시터 및 이의 제조 방법
|
KR100560803B1
(ko)
*
|
2004-02-04 |
2006-03-13 |
삼성전자주식회사 |
캐패시터를 갖는 반도체 소자 및 그 제조방법
|
FR2886050A1
(fr)
*
|
2005-05-18 |
2006-11-24 |
St Microelectronics Crolles 2 |
Condensateur integre a tension de claquage elevee
|
JP2008053300A
(ja)
*
|
2006-08-22 |
2008-03-06 |
Matsushita Electric Ind Co Ltd |
半導体記憶装置およびその製造方法
|
TWI339443B
(en)
|
2007-04-13 |
2011-03-21 |
Au Optronics Corp |
A pixel and a storage capacitor of the pixel and a method of forming thereof
|
US8022458B2
(en)
*
|
2007-10-08 |
2011-09-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Capacitors integrated with metal gate formation
|
US8022547B2
(en)
*
|
2008-11-18 |
2011-09-20 |
Seagate Technology Llc |
Non-volatile memory cells including small volume electrical contact regions
|
EP2422358A1
(en)
*
|
2009-04-20 |
2012-02-29 |
Nxp B.V. |
Method for fabricating an integrated-passives device with a mim capacitor and a high-accuracy resistor on top
|
US8395196B2
(en)
|
2010-11-16 |
2013-03-12 |
International Business Machines Corporation |
Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip
|
US9768181B2
(en)
|
2014-04-28 |
2017-09-19 |
Micron Technology, Inc. |
Ferroelectric memory and methods of forming the same
|
KR102616129B1
(ko)
*
|
2016-02-26 |
2023-12-21 |
에스케이하이닉스 주식회사 |
멀티 레벨 강유전체 메모리 장치 및 그 제조방법
|
US11621269B2
(en)
*
|
2019-03-11 |
2023-04-04 |
Globalfoundries U.S. Inc. |
Multi-level ferroelectric memory cell
|
US11342379B2
(en)
*
|
2019-05-10 |
2022-05-24 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Trench formation scheme for programmable metallization cell to prevent metal redeposit
|
US11855125B2
(en)
*
|
2019-09-04 |
2023-12-26 |
Intel Corporation |
Capacitors with nanoislands on conductive plates
|
TWI730736B
(zh)
*
|
2020-04-24 |
2021-06-11 |
力晶積成電子製造股份有限公司 |
靜態隨機存取記憶體元件及其製造方法
|
CN111968981B
(zh)
*
|
2020-08-26 |
2021-12-24 |
无锡拍字节科技有限公司 |
一种fcob存储器件的制造方法及其电容器
|
CN111968980B
(zh)
*
|
2020-08-26 |
2021-11-23 |
无锡拍字节科技有限公司 |
一种存储器件的制造方法及其电容器
|
US11855230B2
(en)
*
|
2021-08-06 |
2023-12-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Metal-insulator-metal capacitor within metallization structure
|