JP2000216362A5 - - Google Patents

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Publication number
JP2000216362A5
JP2000216362A5 JP2000012613A JP2000012613A JP2000216362A5 JP 2000216362 A5 JP2000216362 A5 JP 2000216362A5 JP 2000012613 A JP2000012613 A JP 2000012613A JP 2000012613 A JP2000012613 A JP 2000012613A JP 2000216362 A5 JP2000216362 A5 JP 2000216362A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000012613A
Other versions
JP2000216362A (ja
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Publication date
Priority claimed from US09/236,048 external-priority patent/US6281535B1/en
Application filed filed Critical
Publication of JP2000216362A publication Critical patent/JP2000216362A/ja
Publication of JP2000216362A5 publication Critical patent/JP2000216362A5/ja
Withdrawn legal-status Critical Current

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JP12613A 1999-01-22 2000-01-21 集積回路のコンデンサ構造 Withdrawn JP2000216362A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US236048 1999-01-22
US09/236,048 US6281535B1 (en) 1999-01-22 1999-01-22 Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell

Publications (2)

Publication Number Publication Date
JP2000216362A JP2000216362A (ja) 2000-08-04
JP2000216362A5 true JP2000216362A5 (ja) 2007-03-08

Family

ID=22887914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12613A Withdrawn JP2000216362A (ja) 1999-01-22 2000-01-21 集積回路のコンデンサ構造

Country Status (2)

Country Link
US (1) US6281535B1 (ja)
JP (1) JP2000216362A (ja)

Families Citing this family (39)

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KR100280288B1 (ko) * 1999-02-04 2001-01-15 윤종용 반도체 집적회로의 커패시터 제조방법
US6927160B1 (en) * 1999-06-09 2005-08-09 National Semiconductor Corporation Fabrication of copper-containing region such as electrical interconnect
KR100308125B1 (ko) * 1999-07-05 2001-11-01 김영환 불휘발성 강유전체 메모리소자 및 그 제조방법
DE10022655C2 (de) * 2000-04-28 2002-03-07 Infineon Technologies Ag Verfahren zur Herstellung von Kondensatorstrukturen
US6597028B2 (en) * 2000-06-26 2003-07-22 Ramtron International Corporation Capacitively coupled ferroelectric random access memory cell and a method for manufacturing the same
US6366489B1 (en) * 2000-08-31 2002-04-02 Micron Technology, Inc. Bi-state ferroelectric memory devices, uses and operation
US6737728B1 (en) * 2000-10-12 2004-05-18 Intel Corporation On-chip decoupling capacitor and method of making same
US6794694B2 (en) * 2000-12-21 2004-09-21 Agere Systems Inc. Inter-wiring-layer capacitors
US6710425B2 (en) * 2001-04-26 2004-03-23 Zeevo, Inc. Structure to increase density of MIM capacitors between adjacent metal layers in an integrated circuit
FR2824423B1 (fr) * 2001-05-02 2003-09-05 St Microelectronics Sa Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre
US6900498B2 (en) * 2001-05-08 2005-05-31 Advanced Technology Materials, Inc. Barrier structures for integration of high K oxides with Cu and Al electrodes
FR2828764B1 (fr) * 2001-08-16 2004-01-23 St Microelectronics Sa Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit
US6673664B2 (en) * 2001-10-16 2004-01-06 Sharp Laboratories Of America, Inc. Method of making a self-aligned ferroelectric memory transistor
DE60140757D1 (de) * 2001-12-28 2010-01-21 St Microelectronics Srl Kondensator für integrierte Halbleiterbauelemente
JP2003289134A (ja) 2002-03-28 2003-10-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6706632B2 (en) * 2002-04-25 2004-03-16 Micron Technology, Inc. Methods for forming capacitor structures; and methods for removal of organic materials
US6611449B1 (en) * 2002-09-24 2003-08-26 Infineon Technologies Aktiengesellschaft Contact for memory cells
US6858442B2 (en) * 2003-02-25 2005-02-22 Infineon Technologies Aktiengesellschaft Ferroelectric memory integrated circuit with improved reliability
US6720232B1 (en) * 2003-04-10 2004-04-13 Taiwan Semiconductor Manufacturing Company Method of fabricating an embedded DRAM for metal-insulator-metal (MIM) capacitor structure
JP2005093714A (ja) * 2003-09-17 2005-04-07 Nec Electronics Corp 半導体装置およびその製造方法
JP4041785B2 (ja) * 2003-09-26 2008-01-30 松下電器産業株式会社 半導体装置の製造方法
KR100572382B1 (ko) * 2003-11-21 2006-04-18 삼성전자주식회사 반도체 장치의 커패시터 및 이의 제조 방법
KR100560803B1 (ko) * 2004-02-04 2006-03-13 삼성전자주식회사 캐패시터를 갖는 반도체 소자 및 그 제조방법
FR2886050A1 (fr) * 2005-05-18 2006-11-24 St Microelectronics Crolles 2 Condensateur integre a tension de claquage elevee
JP2008053300A (ja) * 2006-08-22 2008-03-06 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
TWI339443B (en) 2007-04-13 2011-03-21 Au Optronics Corp A pixel and a storage capacitor of the pixel and a method of forming thereof
US8022458B2 (en) * 2007-10-08 2011-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitors integrated with metal gate formation
US8022547B2 (en) * 2008-11-18 2011-09-20 Seagate Technology Llc Non-volatile memory cells including small volume electrical contact regions
EP2422358A1 (en) * 2009-04-20 2012-02-29 Nxp B.V. Method for fabricating an integrated-passives device with a mim capacitor and a high-accuracy resistor on top
US8395196B2 (en) 2010-11-16 2013-03-12 International Business Machines Corporation Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip
US9768181B2 (en) 2014-04-28 2017-09-19 Micron Technology, Inc. Ferroelectric memory and methods of forming the same
KR102616129B1 (ko) * 2016-02-26 2023-12-21 에스케이하이닉스 주식회사 멀티 레벨 강유전체 메모리 장치 및 그 제조방법
US11621269B2 (en) * 2019-03-11 2023-04-04 Globalfoundries U.S. Inc. Multi-level ferroelectric memory cell
US11342379B2 (en) * 2019-05-10 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Trench formation scheme for programmable metallization cell to prevent metal redeposit
US11855125B2 (en) * 2019-09-04 2023-12-26 Intel Corporation Capacitors with nanoislands on conductive plates
TWI730736B (zh) * 2020-04-24 2021-06-11 力晶積成電子製造股份有限公司 靜態隨機存取記憶體元件及其製造方法
CN111968981B (zh) * 2020-08-26 2021-12-24 无锡拍字节科技有限公司 一种fcob存储器件的制造方法及其电容器
CN111968980B (zh) * 2020-08-26 2021-11-23 无锡拍字节科技有限公司 一种存储器件的制造方法及其电容器
US11855230B2 (en) * 2021-08-06 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal capacitor within metallization structure

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US5081559A (en) 1991-02-28 1992-01-14 Micron Technology, Inc. Enclosed ferroelectric stacked capacitor
US5275974A (en) 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
US5622882A (en) 1994-12-30 1997-04-22 Lsi Logic Corporation Method of making a CMOS dynamic random-access memory (DRAM)
KR0147640B1 (ko) 1995-05-30 1998-08-01 김광호 반도체 장치의 커패시터 및 그 제조방법
JPH10242426A (ja) * 1996-12-26 1998-09-11 Sony Corp 半導体メモリセルのキャパシタ構造及びその作製方法
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors

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