JP2000216165A5 - - Google Patents
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- Publication number
- JP2000216165A5 JP2000216165A5 JP1999012664A JP1266499A JP2000216165A5 JP 2000216165 A5 JP2000216165 A5 JP 2000216165A5 JP 1999012664 A JP1999012664 A JP 1999012664A JP 1266499 A JP1266499 A JP 1266499A JP 2000216165 A5 JP2000216165 A5 JP 2000216165A5
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- film
- oxide film
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- JUINSXZKUKVTMD-UHFFFAOYSA-N hydrogen azide Chemical compound N=[N+]=[N-] JUINSXZKUKVTMD-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- -1 nitrogen halide Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01266499A JP4573921B2 (ja) | 1999-01-21 | 1999-01-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01266499A JP4573921B2 (ja) | 1999-01-21 | 1999-01-21 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000216165A JP2000216165A (ja) | 2000-08-04 |
| JP2000216165A5 true JP2000216165A5 (enExample) | 2006-03-02 |
| JP4573921B2 JP4573921B2 (ja) | 2010-11-04 |
Family
ID=11811645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01266499A Expired - Fee Related JP4573921B2 (ja) | 1999-01-21 | 1999-01-21 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4573921B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4599734B2 (ja) * | 2001-03-14 | 2010-12-15 | ソニー株式会社 | 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法 |
| JP4599746B2 (ja) * | 2001-04-04 | 2010-12-15 | ソニー株式会社 | 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法 |
| JP4644964B2 (ja) * | 2001-04-04 | 2011-03-09 | ソニー株式会社 | 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法 |
| WO2003005435A1 (en) * | 2001-07-05 | 2003-01-16 | Tokyo Electron Limited | Substrate treating device and substrate treating method, substrate flattening method |
| KR100482758B1 (ko) * | 2002-12-12 | 2005-04-14 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| JP2005277253A (ja) * | 2004-03-26 | 2005-10-06 | National Institute Of Advanced Industrial & Technology | 半導体装置の作製方法及び水素処理装置 |
| TW200603287A (en) * | 2004-03-26 | 2006-01-16 | Ulvac Inc | Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith |
| JP2006196713A (ja) * | 2005-01-13 | 2006-07-27 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその作製方法並びに重水素処理装置 |
| JP2012186490A (ja) * | 2012-05-07 | 2012-09-27 | National Institute Of Advanced Industrial & Technology | 半導体装置及び半導体基板の重水素処理装置 |
| US20140034632A1 (en) * | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3874815B2 (ja) * | 1994-08-31 | 2007-01-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3737221B2 (ja) * | 1996-09-06 | 2006-01-18 | 英樹 松村 | 薄膜作成方法及び薄膜作成装置 |
| JPH11340225A (ja) * | 1998-05-27 | 1999-12-10 | Sony Corp | 絶縁膜の形成方法及びｐ形半導体素子の製造方法 |
| JP4299393B2 (ja) * | 1999-01-20 | 2009-07-22 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
1999
- 1999-01-21 JP JP01266499A patent/JP4573921B2/ja not_active Expired - Fee Related
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